Advanced Optical Materials, Год журнала: 2024, Номер unknown
Опубликована: Окт. 24, 2024
Abstract Ascribing to the low power consumption, self‐powered photodetectors (SPPDs) have promising applications in optical communication and photoelectric imaging. Aiming improve performance of SPPDs, many efforts been devoted exploring semiconductor‐heterojunction candidates. However, key parameters especially responsivity response time, still lag behind those standard photodetectors. Here, with modification transport behavior, ultra‐high‐performance SPPDs are fabricated based on reported Sb 2 Se 3 /ZnO heterojunction. Keeping broadband detection from infrared UV region, achieve increased detectivity 0.38 A W −1 1.40 × 10 13 Jones, respectively. Especially, according cut‐off frequency measurements, time is improved 93.5/75.0 ns, which a microsecond, even millisecond level for most current SPPDs. These studies further reveal mechanism indicate that this method can be applied fabricate imaging arrays. With combination experimental results, we provide an effective enhancing toward their applications.
Язык: Английский