Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration

Journal of Semiconductors, Год журнала: 2025, Номер 46(2), С. 021405 - 021405

Опубликована: Фев. 1, 2025

Abstract The rapid growth of artificial intelligence has accelerated data generation, which increasingly exposes the limitations faced by traditional computational architectures, particularly in terms energy consumption and latency. In contrast, data-centric computing that integrates processing storage potential reducing latency usage. Organic optoelectronic synaptic transistors have emerged as one type promising devices to implement paradigm owing their superiority flexibility, low cost, large-area fabrication. However, sophisticated functions including vector-matrix multiplication a single device can achieve are limited. Thus, fabrication utilization organic transistor arrays (OOSTAs) imperative. Here, we summarize recent advances OOSTAs. Various strategies for manufacturing OOSTAs introduced, coating casting, physical vapor deposition, printing, photolithography. Furthermore, innovative applications OOSTA system integration discussed, neuromorphic visual systems systems. At last, challenges future perspectives utilizing real-world discussed.

Язык: Английский

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Effective Molecular Alignment of Semiconducting Polymer and Its Application to Photopatterned Stretchable Transistors

Advanced Materials Technologies, Год журнала: 2025, Номер unknown

Опубликована: Март 5, 2025

Abstract Intrinsically stretchable organic transistors are promising solutions for realizing electronic systems, such as skin‐like wearables and next‐generation displays. Nevertheless, applying thin‐film to high‐end display backplanes requires enhancing key electrical properties, including mobility off‐current, beyond the amorphous Si level, particularly short channel lengths. Herein, enhanced performances of intrinsically with a high degree molecular alignment in semiconductor composites, comprising diketopyrrolopyrrole‐based polymer polystyrene‐block‐poly(ethylene‐ran‐butylene)‐block‐polystyrene‐elastomer, utilizing solution shearing process on nanogrooved surfaces is reported. The density shapes nano grooves controlled by number rubbings 0.1 µm diamond lapping film, achieving values exceeding 3 cm 2 Vs −1 SiO /Si—three‐fold higher than that conventional spin‐coating method. This improves crystalline structure films, facilitating π–π stacking large‐sized structures. Additionally, solvent treatment surface Au electrodes effectively reduces contact resistance highly oriented semiconductors transistors, exhibiting 2.66 0.96 pA off‐current at 10 length. properties yield only minor variations under 50% strain conditions after 1000 cycles 40% strain.

Язык: Английский

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Low‐Voltage and Stretchable Organic Field Effect Transistor Array Based on Tri‐Layer Elastomer Dielectric for Gas Sensing

Advanced Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 30, 2025

Abstract Stretchable organic field‐effect transistors (OFETs) based gas sensors have attracted significant attention due to their inherent merits such as excellent mechanical compatibility, flexibility, and signal amplification capabilities. However, achieving low‐voltage operation remains challenging, which limits practical application. Herein, a tri‐layer dielectric design is developed achieve low‐voltage, high‐mobility stretchable for sensors. The dielectric, consisting of high‐κ polymer film, non‐polar layer, cross‐linking allows the operate at −5 V. transistor‐based exhibit high sensitivity detection capability. Thus, on dielectrics offer promising strategy advancing wearable

Язык: Английский

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Influence of alkyl chain length in self-assembled monolayers on nanogroove-guided polymer alignment for stretchable thin-film transistors

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 163539 - 163539

Опубликована: Май 1, 2025

Язык: Английский

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