Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe2 and PtSe2/n–-Si/n+-Si 2D–3D PIN Wide-Spectrum Polarization Detectors DOI
Xiaojia Xu,

Zhiming Li,

Meili Ge

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Май 12, 2025

PtSe2 is notable for its high carrier mobility and exceptional air stability. Its unique thickness-dependent transition from a semiconductor to semimetal renders it particularly promising short-wave infrared (SWIR) detection applications. In this study, single-crystal film with an area approaching 4 in. was fabricated at low temperature under the concurrent modulation of nonuniform gas thermal field in large-diameter tube. Subsequently, p-PtSe2/n--Si/n+-Si 2D-3D PIN photodetectors were constructed. The effect intrinsic layer thickness (0.5 versus 5 μm) on device performance systematically examined. Thinner devices not only deliver wide SWIR range 532 2200 nm but also exhibit metrics, rectification ratio (∼106) ideality factor 1.288, indicating near-ideal performance. contrast, thinner have detectivity as 1.49 × 1011 Jones (approximately double higher), rise fall times 24/71 μs 3-fold faster), 3 dB cutoff frequency 32 kHz (nearly 5-fold higher). addition, display excellent imaging polarization range, dichroic reaching 36.5. This work provides significant insights advancement Si-based integrated detectors.

Язык: Английский

Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe2 and PtSe2/n–-Si/n+-Si 2D–3D PIN Wide-Spectrum Polarization Detectors DOI
Xiaojia Xu,

Zhiming Li,

Meili Ge

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Май 12, 2025

PtSe2 is notable for its high carrier mobility and exceptional air stability. Its unique thickness-dependent transition from a semiconductor to semimetal renders it particularly promising short-wave infrared (SWIR) detection applications. In this study, single-crystal film with an area approaching 4 in. was fabricated at low temperature under the concurrent modulation of nonuniform gas thermal field in large-diameter tube. Subsequently, p-PtSe2/n--Si/n+-Si 2D-3D PIN photodetectors were constructed. The effect intrinsic layer thickness (0.5 versus 5 μm) on device performance systematically examined. Thinner devices not only deliver wide SWIR range 532 2200 nm but also exhibit metrics, rectification ratio (∼106) ideality factor 1.288, indicating near-ideal performance. contrast, thinner have detectivity as 1.49 × 1011 Jones (approximately double higher), rise fall times 24/71 μs 3-fold faster), 3 dB cutoff frequency 32 kHz (nearly 5-fold higher). addition, display excellent imaging polarization range, dichroic reaching 36.5. This work provides significant insights advancement Si-based integrated detectors.

Язык: Английский

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