Ultrafast Non‐Volatile Floating‐Gate Memory Based on All‐2D Materials

Advanced Materials, Год журнала: 2024, Номер 36(24)

Опубликована: Март 19, 2024

Abstract The explosive growth of massive‐data storage and the demand for ultrafast data processing require innovative memory devices with exceptional performance. 2D materials their van der Waal heterostructures atomically sharp interfaces hold great promise innovations in devices. Here, this work presents non‐volatile, floating‐gate all functional layers made materials, achieving programming/erasing speeds (20 ns), high extinction ratios (up to 10 8 ), multi‐bit capability. These also exhibit long‐term retention exceeding years, facilitated by a gate‐coupling ratio (GCR) between layers. Additionally, demonstrates realization an “OR” logic gate on single‐device unit synergistic electrical optical operations. present results provide solid foundation next‐generation ultrahigh‐speed, ultralong lifespan, non‐volatile devices, potential scale‐up manufacturing flexible electronics applications.

Язык: Английский

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Electronics and Optoelectronics Based on Tellurium

Advanced Materials, Год журнала: 2024, Номер 36(45)

Опубликована: Сен. 16, 2024

As a true 1D system, group-VIA tellurium (Te) is composed of van der Waals bonded molecular chains within triangular crystal lattice. This unique structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 monolayer limit. These diverse properties make suitable for wide range applications, addressing both established emerging challenges. review begins an elaboration structures fundamental Te, followed by detailed discussion its various synthesis methods, which primarily include solution phase, chemical physical vapor deposition technologies. methods form foundation designing Te-centered devices. Then device applications enabled nanostructures are introduced, emphasis on electronics, optoelectronics, sensors, large-scale circuits. Additionally, performance optimization strategies discussed Te-based field-effect transistors. Finally, insights into future research directions challenges that lie ahead this field shared.

Язык: Английский

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Stabilization of halide perovskites with silicon compounds for optoelectronic, catalytic, and bioimaging applications

InfoMat, Год журнала: 2024, Номер 6(12)

Опубликована: Май 26, 2024

Abstract Silicon belongs to group 14 elements along with carbon, germanium, tin, and lead in the periodic table. Similar silicon is capable of forming a wide range stable compounds, including hydrides, organosilicons, silicic acids, oxides, silicone polymers. These materials have been used extensively optoelectronic devices, sensing, catalysis, biomedical applications. In recent years, compounds also shown be suitable for stabilizing delicate halide perovskite structures. composite are now receiving lot interest their potential use various real‐world Despite exhibiting outstanding performance perovskites susceptible breakdown presence moisture, oxygen, heat, UV light. thought excellent improving both stability perovskite‐based devices. this work, that research applications fields discussed. The interfacial stability, structure–property correlations, application aspects analyzed at molecular level. This study explores developments, difficulties, future directions associated synthesis perovskite‐silicon compounds. image

Язык: Английский

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2D Reconfigurable Memory Device Enabled by Defect Engineering for Multifunctional Neuromorphic Computing

Advanced Materials, Год журнала: 2024, Номер 36(35)

Опубликована: Июль 15, 2024

In this era of artificial intelligence and Internet Things, emerging new computing paradigms such as in-sensor in-memory call for both structurally simple multifunctional memory devices. Although two-dimensional (2D) devices provide promising solutions, the most reported either suffer from single functionalities or structural complexity. Here, work reports a reconfigurable device (RMD) based on MoS

Язык: Английский

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An Ultrafast Multibit Memory Based on the ReS₂/h-BN/Graphene Heterostructure

ACS Nano, Год журнала: 2024, Номер 18(34), С. 23403 - 23411

Опубликована: Авг. 1, 2024

The exponential growth of data in the big era has made it imperative to improve storage density and calculation speed. Therefore, development a multibit memory with an ultrafast operational speed is great significance. In this work, floating-gate (FG) based on ReS

Язык: Английский

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Logic Computing Field-Effect Transistors Based on a Monolayer WSe₂ Homojunction for the Semi-adder and Decoder

Nano Letters, Год журнала: 2024, Номер 24(35), С. 11132 - 11139

Опубликована: Авг. 27, 2024

Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for next-generation computing hardware. However, exploring the cascade design of FETs logic remains challenging. Here, by using density functional theory combined with nonequilibrium Green's function method, we a 5 nm split-gate FET based on monolayer WSe

Язык: Английский

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Van der Waals Gap Enabled Robust Retention of MoS₂ Floating‐Gate Memory for Logic‐In‐Memory Operations

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 14, 2025

Abstract Floating gate (FG) memory can store data for decades without a power supply. Herein, high‐performance MoS 2 FG transistors with stable operations are demonstrated, in which van der Waals (vdW) gap is constructed between tunnelling oxide layer and channel to prevent the leakage. The atomic structure one‐step formed from HfS flake by ozone treatment while supersaturated oxygen at interface affords vdW gap. exhibit after 21 days, ultralow leakage current (0.1 fA µm −1 ), excellent retention capability >10 5 s, high on/off ratio of 10 7 , desirable cycling endurance performance (>1000 cycles). Configurable logic‐in‐memory devices accomplished multi‐gated structures through multi‐level programming operations, modulated different electrostatic potential on stack. NAND NOR output logic sequences generated. designed promising developing in‐memory computing systems.

Язык: Английский

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A Reliable High-Performance Floating-Gate Transistor Based on ZrS₂ Native Oxidation for Optoelectronic Synergistic Artificial Synapses

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер 17(6), С. 9584 - 9594

Опубликована: Янв. 31, 2025

Floating-gate transistors (FGTs), considered the most promising structure among three-terminal van der Waals (vdW) synaptic transistors, possess superiorities in improved data retention, excellent endurance properties, and multibit storage capacity, thereby overcoming von Neumann bottleneck conventional computing architectures. However, dielectric layer FGT devices typically depends on atomic deposition or mechanically transferred insulators, posing several challenges terms of device compatibility, manufacturing complexity, performance degradation. Therefore, it is crucial to discover dielectrics compatible with two-dimensional (2D) materials for further simplifying structures achieving optimal performance. Here, we present a controllable reliable oxidation process convert 2D semiconductor ZrS2 into its native oxide ZrOx combine ZrOx/ZrS2 MoS2 channel form MoS2/ZrOx/ZrS2 FGT, which exhibits high on/off ratio 107, wide memory window 101 V, long retention time 103 s, large capacity 7 bits, an PPF index 269.4%, low power consumption 5 pJ. Under photoelectric stimulation, stimulates various biological synapse behaviors, including associative function retina-like adaptation. In particular, achieves information erasure under solely optical exhibiting consistency weight modulation optogenetics outstanding optoelectronic These results suggest that our work provides novel effective approach enhancing their performance, holding significant potential application next-generation multifunctional systems.

Язык: Английский

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All‐Inorganic Lead‐Free Cs₂AgBiBr₆/ZnO Artificial Retina Synapse Based on Photoelectric Synergistic Dual‐Mechanism for Neuromorphic Computing

Small, Год журнала: 2025, Номер unknown

Опубликована: Фев. 2, 2025

Adaptive learning capability of optoelectronic synaptic hardware holds promising application prospects in next generation artificial intelligence, and the development biometric retina perception is sternly hampered by three crucial issues, including well-balance between excitatory inhibitory, non-volatile multi-state storage, optimal energy consumption. In this work, a novel Cs2AgBiBr6/ZnO synapse proposed successfully programmed with optical electronic inhibitory light dual-mechanism: Lead-free perovskite Cs2AgBiBr6 guarantees abundant photogenerated carrier concentration, process capture release occurs ZnO layer, which can collaboratively modulate various plasticity behaviors depending on distinct stimulus. Consequently, multi-bit storage attained dual-mechanism memory (DNVM) as function consecutive spikes. The consumption DNVM 1.85 nJ at single spike, an ultra-low one 13.8 fJ triggered electrical pulse, approximatively meets requirement biological event performance further evaluated Pavlov's classical conditioning experiment visual system, offering exciting paradigm for implementing on-chip adaptive neuromorphic computing.

Язык: Английский

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Transition metal-doped SnSe2/MoSe2 heterostructures: Modulating electronic, magnetic, and optical properties for spintronic and optoelectronic devices

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 162758 - 162758

Опубликована: Фев. 1, 2025

Язык: Английский

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