Chemical Vapor Deposition Growth of 2D Nonlayered CuInSe₂ for Vacancy‐Assisted Broadband Photodetection

Small, Год журнала: 2025, Номер unknown

Опубликована: Янв. 9, 2025

Abstract The properties and device applications of 2D semiconductors are highly sensitive to intrinsic structural defects due their ultrathin nature. CuInSe 2 (CIS) materials own excellent optoelectronic ordered copper vacancies, making them widely applicable in photovoltaic photodetection fields. However, the synthesis CIS nanoflakes remains challenging nonlayered structure, multielement composition, competitive growth various by‐products, which further hinders exploration vacancy‐related devices. Here, successfully synthesized using a molecular sieve‐assisted chemical vapor deposition process. anisotropic van der Waals with well‐defined exposed facets is closely associated presence sieve. Electron microscopy techniques reveal vacancies within as‐grown crystals, extending optical absorption near‐infrared region. Consequently, nanoflake‐based photodetectors exhibit broadband capabilities (470 1550 nm) exceptional performance, such as high responsivity 11 A W −1 , an external quantum efficiency (EQE) 2143%, fast response speed ≈46.5 ms under incident wavelength 637 nm, highlighting promising potential next‐generation optoelectronics.

Язык: Английский

Bi₂O₂Se Nanoplates for Lateral Memristor Devices

ACS Applied Nano Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 30, 2025

Язык: Английский