Self-Powered Triboelectric Ethanol Sensor Based on CuO-Doped Electrospun PVDF Fiber with Enhanced Sensing Performance DOI Open Access
Qinyu He, Hyunwoo Cho,

Inkyum Kim

и другие.

Polymers, Год журнала: 2025, Номер 17(10), С. 1400 - 1400

Опубликована: Май 20, 2025

Electrospinning techniques have been widely applied in diverse applications, such as biocompatible membranes, energy storage systems, and triboelectric nanogenerators (TENGs), with the capability to incorporate other functional materials achieve specific purposes. Recently, gas sensors incorporating doped semiconducting fabricated by electrospinning extensively investigated. TENGs, functioning self-powered sources, utilized drive without external power supplies. Herein, a ethanol sensor (TEES) is integrating TENG an into single device. The proposed TEES exhibits significantly improved response time lower detection limit compared published integrated sensors. device achieves open-circuit voltage of 51.24 V at 800 rpm maximum short-circuit current 7.94 μA rpm. Owing non-contact freestanding operating mode, shows no significant degradation after 240,000 operational cycles. Compared previous studies that TENGs sensors, demonstrated marked improvement sensing performance, faster (6 s 1000 ppm) (10 ppm). Furthermore, enabled modulating gate terminal IRF840 metal-oxide semiconductor field-effect transistor (MOSFET), which controls illumination light-emitting diode (LED). LED extinguished when electrical output decreases below setting value, allowing for discrimination intoxicated states. These results suggest provides promising platform self-powered, high-performance sensing.

Язык: Английский

Unraveling the Synergy of Interfacial Engineering in In Situ Prepared NiO/NdNiO3 for ppb‐Level SO2 Sensing: Mechanistic and First‐Principles Insights DOI
Vishnu G Nath, S. S. Tomar, Nikhil N. Rao

и другие.

Small, Год журнала: 2025, Номер unknown

Опубликована: Апрель 23, 2025

Abstract Interfacial engineering of semiconductor metal oxides offers a plethora features to overcome the limitations chemiresistive gas sensors, thereby increasing their practical viability. Herein, SO 2 sensing characteristics NiO are modulated through incorporation NdNiO 3 , via facile in situ synthesis NiO/NdNiO nanostructures that significantly enhance sensor performance. To this end, systematic control Nd/Ni molar ratio is employed during enabling regulation structural properties and interfacial interactions. The optimized ‐based demonstrates superior detection at 140 °C, outperforming pristine NiO, owing tunable charge carrier dynamics heterointerface adsorption. showcases an extensive dynamic response range from 450 ppb 200 ppm impressive limit (320 ppb), along with remarkable selectivity excellent stability. First‐principles calculations reveal play distinct roles adsorption, functioning as receptor, selectively interacting dissociated oxygen, serving transducer, facilitating signal conversion by inhibiting oxygen dissociation. Additionally, designed portable, threshold‐triggered prototype, integrating developed enhanced detection, presents promising avenue for applications industrial environmental monitoring.

Язык: Английский

Процитировано

0

Self-Powered Triboelectric Ethanol Sensor Based on CuO-Doped Electrospun PVDF Fiber with Enhanced Sensing Performance DOI Open Access
Qinyu He, Hyunwoo Cho,

Inkyum Kim

и другие.

Polymers, Год журнала: 2025, Номер 17(10), С. 1400 - 1400

Опубликована: Май 20, 2025

Electrospinning techniques have been widely applied in diverse applications, such as biocompatible membranes, energy storage systems, and triboelectric nanogenerators (TENGs), with the capability to incorporate other functional materials achieve specific purposes. Recently, gas sensors incorporating doped semiconducting fabricated by electrospinning extensively investigated. TENGs, functioning self-powered sources, utilized drive without external power supplies. Herein, a ethanol sensor (TEES) is integrating TENG an into single device. The proposed TEES exhibits significantly improved response time lower detection limit compared published integrated sensors. device achieves open-circuit voltage of 51.24 V at 800 rpm maximum short-circuit current 7.94 μA rpm. Owing non-contact freestanding operating mode, shows no significant degradation after 240,000 operational cycles. Compared previous studies that TENGs sensors, demonstrated marked improvement sensing performance, faster (6 s 1000 ppm) (10 ppm). Furthermore, enabled modulating gate terminal IRF840 metal-oxide semiconductor field-effect transistor (MOSFET), which controls illumination light-emitting diode (LED). LED extinguished when electrical output decreases below setting value, allowing for discrimination intoxicated states. These results suggest provides promising platform self-powered, high-performance sensing.

Язык: Английский

Процитировано

0