Nanoscale, Год журнала: 2024, Номер 16(28), С. 13551 - 13561
Опубликована: Янв. 1, 2024
Interactions between solvents with surface Sn atoms are unravelled experimentally and theoretically for impacting the electronic properties of 2D SnO 2 nanosheets.
Язык: Английский
ACS Sensors, Год журнала: 2024, Номер unknown
Опубликована: Ноя. 18, 2024
The evaluation of selectivity/cross-sensitivity is one the most important tests for gas sensor development, particularly that based on chemiresistive technology. It known sensors suffer from low selectivity when they provide sensitivity to several analytes. Typically, testing involves independently assessing a sensor's response specific gas. However, there growing need evaluate performance with interfering gases or mixtures since are always exposed in practice. Despite great importance characterization, currently, no standard methods at conditions target coexists compounds, which mimics real conditions. We outlined four main researchers use cross-sensitivity sensors. highlights key aspects test performance, assessment methodologies, and procedure features, attempting classify them by their distinct characteristics. This review covers essentials properties, adsorption desorption processes, molecule interactions. Finally, we tried address lack standardized protocols evaluating sensors' guide researchers.
Язык: Английский
Процитировано
11
Advanced Functional Materials, Год журнала: 2024, Номер unknown
Опубликована: Июнь 10, 2024
Abstract 2D metal oxides (2DMOs) have recently emerged as a high‐performance class of ultrathin, wide bandgap materials offering exceptional electrical and optical properties for area device applications in energy, sensing, display technologies. Liquid printing represents thermodynamically advantageous strategy synthesizing 2DMOs by solvent‐free vacuum‐free scalable method. Here, recent progress the field liquid printed is reviewed, considering how physics Cabrera‐Mott oxidation gives this rapid, low‐temperature process advantages over alternatives such sol‐gel nanoparticle processing. The growth, composition, crystallinity burgeoning set 1–3 nm thick semiconducting, conducting, dielectric are analyzed that uniquely suited fabrication flexible electronics. limitations these strategies considered, highlighting opportunities to amplify impact 2DMO through large‐area printing, design doped alloys, stacking electrostatically engineer new oxide heterostructures, implementation devices gas photodetection, neuromorphic computing.
Язык: Английский
Процитировано
8
ACS Applied Materials & Interfaces, Год журнала: 2023, Номер unknown
Опубликована: Ноя. 28, 2023
Due to excellent gas sensing performances, such as high responsivity, good selectivity, and long-term stability, two-dimensional (2D) nonlayered metal oxide semiconductors have attracted wide attention. However, their thickness-dependent behaviors are rarely investigated, which is critical in the development of practical 2D sensors. In this work, In2O3 crystals with a range thicknesses realized by extracting self-limited layer from liquid indium droplets controlled environment. A strong optoelectronic NO2 behavior at room temperature observed. While full reversibility selectivity toward shown despite In2O3, 1.9 nm thick exhibits maximum response amplitude (ΔI/Ig = 1300) for 10 ppm 365 light irradiation, about 18, 58, 810 times larger than those its 3.1 thick, 4.5 6.2 counterparts, respectively. The shortest recovery (i.e., 40 s/48 s) demonstrated 1.88 well. We correlate phenomenon change band structure, influenced thickness crystals. This work provides in-depth knowledge gas-sensing performances emerging crystals, well opportunities develop next-generation high-performing room-temperature
Язык: Английский
Процитировано
11
Materials, Год журнала: 2024, Номер 17(4), С. 844 - 844
Опубликована: Фев. 9, 2024
Low-dimensional (LD) materials, with atomically thin anisotropic structures, exhibit remarkable physical and chemical properties, prominently featuring piezoelectricity resulting from the absence of centrosymmetry. This characteristic has led to diverse applications, including sensors, actuators, micro- nanoelectromechanical systems. While piezoelectric effects are observed across zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D) LD challenges such as effective charge separation crystal structure imperfections limit their full potential. Addressing these issues requires innovative solutions, integration materials polymers, ceramics, metals, other porous proving a key strategy significantly enhance properties. review comprehensively covers recent advances in synthesizing characterizing composites based on materials. The synergistic combination substances, especially demonstrates notable performance improvements, addressing inherent challenges. also explores future directions developing composite highlighting potential applications various technological domains.
Язык: Английский
Процитировано
3
Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Апрель 4, 2025
Abstract Semiconductor‐based hydrogen sensors provide cost‐efficient solutions for safety and a circular hydrogen‐based economy. Liquid metal‐derived 2D metal oxides show promise as ultrathin sensing materials. However, conventional exfoliation inevitably introduces metallic resides, which are often removed post‐synthesis. Here the residual indium nano‐islands strategically retained within annealed In 2 O 3 layers, creating self‐embedded Schottky junctions. This unique architecture enhances gas‐solid coupling at In/In interfaces. Tuning composition spatial distribution of amplifies thermionic electron emission across barriers. The resulting sensor achieves room‐temperature detection with rapid response time 4.4 s, high 3.4, >2.5 selectivity against common interferents. Remarkably, it exhibits only 6.7% performance deviation after 6 weeks shows good humidity resistance. These merits underscore potential material method addressing formidable challenge in developing high‐performance sensors.
Язык: Английский
Процитировано
0
ACS Applied Nano Materials, Год журнала: 2025, Номер unknown
Опубликована: Апрель 15, 2025
Язык: Английский
Процитировано
0
Advanced Functional Materials, Год журнала: 2023, Номер 34(31)
Опубликована: Сен. 19, 2023
Abstract Atomically thin, mechanically flexible, memory‐functional, and power‐generating crystals play a crucial role in the technological advancement of portable devices. However, adoption these such technologies is sometimes impeded by expensive laborious synthesis methods, as well need for large‐scale, stable, air‐stable materials. Here, an instant‐in‐air liquid metal printing process utilizing bismuth (Bi) presented, forming naturally occurring, air‐stable, atomically flexible nanogenerators ferroelectric oxides. Despite centrosymmetric nature monoclinic P21/c system achieved α‐Bi 2 O 3‐δ high kinetics leads to formation vacancies that disrupt symmetry which confirmed density functional theory (DFT) calculations. The polarization switching measured utilized nanopatterning. exceptional attributes thin multifunctional stable oxides, including piezoelectricity, mechanical flexibility, polarizability, present significant opportunities developing nano‐components can be seamlessly integrated into wide range
Язык: Английский
Процитировано
7
Applied Surface Science, Год журнала: 2024, Номер 663, С. 160131 - 160131
Опубликована: Апрель 20, 2024
Язык: Английский
Процитировано
2
ACS Applied Nano Materials, Год журнала: 2023, Номер 6(21), С. 19867 - 19875
Опубликована: Окт. 30, 2023
Ultrathin III–VI semiconductors have garnered significant attention as potential candidates for electronic applications. Indium selenide (In2Se3) exhibits fascinating ferroelectric properties and phase-dependent bandgap (1.3–2.8 eV), making it promising applications in micro- nanoelectronics field. However, the challenges of synthesizing large-sized, uniformly structured In2Se3 films with desired phase ensuring their stability remain significant. In this study, we demonstrate a method preparing two-dimensional (2D) by an atomic displacement reaction In2O3 selenium (Se) atmosphere. The structure could be controlled from γ to β adjusting temperature, as-grown show good crystallinity uniformity. Furthermore, establish that h-BN, acting dual-sided encapsulation layers, effectively segregates atmospheric oxygen. This prevents deselenization oxidation reactions, leading marked improvement films. research results will lay foundation application high-power, highly integrated micronanodevices, spanning across various areas including storage arrays, field-effect transistors, sensors, optoelectronics, photovoltaics.
Язык: Английский
Процитировано
4
The Journal of Physical Chemistry C, Год журнала: 2024, Номер 128(12), С. 5355 - 5365
Опубликована: Март 16, 2024
In our study, we introduce a novel concept concerning the formation of oxygen vacancies at varying temperatures during oxide skin in liquid metal. Specifically, by adjusting 2D-InOx printing temperatures, successfully regulated concentration specific defects, unveiling decrease higher temperatures. Employing comprehensive suite analytical techniques, present swift and efficient method for producing while simultaneously evaluating its internal defect content both macroscopic microscopic levels. Furthermore, employed electron energy loss spectroscopy (EELS) scans proximity grain boundaries, enabling us to effectively probe fluctuation vacancy between these boundaries interior grains. Our findings underscore notable accumulation boundaries. Notably, capacity manipulate through temperature adjustments enhances significance investigation, offering valuable insights into 2D memristor materials their potential role development memory devices based on 2D-InOx.
Язык: Английский
Процитировано
0