Resistive gas sensors based on inorganic nanotubes: a review

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 179585 - 179585

Опубликована: Март 1, 2025

Язык: Английский

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Thickness-dependent optical properties and ultrafast carrier dynamics of 2D non-layered β-In2S3

APL Materials, Год журнала: 2025, Номер 13(2)

Опубликована: Фев. 1, 2025

Non-layered 2D materials, such as indium sulfide (In2S3), possess distinctive properties due to their unsaturated surface bonds and atomically thin structures, rendering them highly promising for state-of-the-art optoelectronic applications. Herein, we conduct a comprehensive investigation into the optical characteristics ultrafast carrier dynamics of β-In2S3 nanoflakes. Through thickness-dependent Raman, photoluminescence (PL), absorption spectra, reveal critical role thickness in tuning β-In2S3. Notably, exhibits broad PL emission robust nonlinear response second-harmonic generation (SHG), largely attributed inherent defect states. Thickness-dependent SHG surpasses conventional odd/even layer limitations, highlighting β-In2S3’s unique versatility. Ultrafast further unveil two distinct defect-mediated recombination processes: fast non-radiative pathway slower radiative pathway, both accelerating with increasing thickness, revealed by transient spectroscopy. This finding underscores significant modulation lifetime varying These insights not only emphasize versatility applications but also pave way its integration next-generation devices, offering avenue advancing field optoelectronics.

Язык: Английский

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Exploring the optoelectronic potential of dip coated CuInS2 thin films via morphological, structural, and photoresponse insights

Surfaces and Interfaces, Год журнала: 2025, Номер 61, С. 106098 - 106098

Опубликована: Фев. 28, 2025

Язык: Английский

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Polarity Flipping in SnSe Empowering Wavelength Selective Self-Powered Broadband Photodetection

ACS Applied Electronic Materials, Год журнала: 2024, Номер unknown

Опубликована: Авг. 30, 2024

The demand for high-performance self-powered photodetectors with broadband wavelength selectivity has intensified due to their applications in various fields such as imaging, sensing, communication, and environmental monitoring. Among emerging materials, tin selenide (SnSe) garnered significant attention its promising optoelectronic properties. In this study, we have investigated the phenomenon of polarity flipping sputtering-grown pure SnSe film impact on selective photodetection. designed metal semiconductor device an active area 9 μm2 exhibits a maximum responsivity 10.82 mAW–1, high external quantum efficiency 378.76%, lowest noise equivalent power 5.3 × 10–13 WHz–1/2 1064 nm light illumination optical 16.2 nW self-bias mode. proposed SnSe-based wavelength-dependent switching mode spectral range UV–NIR, enabling function bidirectional response photodetector makes it possible differentiate between different photons, ultraviolet/visible near-infrared. This capability can improve accuracy monitoring systems, better detection analysis factors, pollution, radiation levels, atmospheric composition. We elucidated underlying through comprehensive characterization material's structural, optical, electrical Our findings reveal that controlled phase during sputter deposition significantly alter crystalline structure, resulting tunable properties enhanced photoresponse across broad range. Additionally, enables exhibit unprecedented selectivity, thus opening avenues developing advanced devices. research advances our fundamental understanding phase-controlled thin paves way designing fabricating highly efficient tailored characteristics.

Язык: Английский

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Unravelling NbSe2 single crystal: First principle insights, optical properties, synthesis and X-ray diffraction profile investigation

Next Materials, Год журнала: 2024, Номер 7, С. 100361 - 100361

Опубликована: Сен. 3, 2024

Язык: Английский

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Unveiling the influence of synthesis techniques on crystallite size of CuInS₂ nanostructures

Advances in Natural Sciences Nanoscience and Nanotechnology, Год журнала: 2024, Номер 15(4), С. 045004 - 045004

Опубликована: Сен. 30, 2024

Abstract Copper indium disulfide (CuInS 2 ) nanostructures are synthesized by wet precipitation and sol–gel techniques. The high-resolution transmission electron microscopy (HRTEM) analysis exhibits nanorods (NR) nanocubes (NC) of CuInS resulting from methods, respectively. Their characterizations accomplished UV–vis-NIR spectroscopy, dynamic light scattering (DLS), x-ray diffraction (XRD) particle size is obtained HRTEM, UV–vis-NIR, DLS analyses. Average crystallite estimated via Scherrer’s method (graphical analytical), Monshi-Scherrer method, Williamson–Hall relations (uniform deformation, uniform stress deformation energy-density models), size-strain plot Halder-Wagner relation using XRD profile which also compared with as-obtained size. Moreover, the pattern reflection peaks used to assess more accurately energy density, lattice stress, microstrain values. results affirm NR have higher (∼22 nm) than NC (∼16 nm). outcomes demonstrate outstanding agreement predicted average sizes different approaches.

Язык: Английский

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Surface Plasmon Resonance Spectrometer in the Double Prism Configuration: Fast Characterization of the Thickness and Dielectric Constant Dispersion of Thin Films

Sensors and Actuators A Physical, Год журнала: 2024, Номер 381, С. 116067 - 116067

Опубликована: Ноя. 15, 2024

Язык: Английский

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Environmentally friendly recycling of energy storage functional materials from hazardous waste lithium-containing aluminum electrolytes

Chemical Engineering Journal, Год журнала: 2024, Номер unknown, С. 158008 - 158008

Опубликована: Ноя. 1, 2024

Язык: Английский

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