High Synaptic Plasticity Enabled by Controlled Ion Migration in Organic Heterojunction Memristors

Journal of Materials Chemistry C, Год журнала: 2024, Номер 12(26), С. 9669 - 9676

Опубликована: Янв. 1, 2024

Fabrication of organic heterojunction memristor with controlled ion migration enables precise synaptic behavior simulation.

Язык: Английский

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Synthesis and Unique Behaviors of High-Purity HEA Nanoparticles Using Femtosecond Laser Ablation

Nanomaterials, Год журнала: 2024, Номер 14(6), С. 554 - 554

Опубликована: Март 21, 2024

High-entropy alloys (HEAs) are a class of metal consisting four or more molar equal near-equal elements. HEA nanomaterials have garnered significant interest due to their wide range applications, such as electrocatalysis, welding, and brazing. Their unique multi-principle high-entropy effect allows for the tailoring alloy composition facilitate specific electrochemical reactions. This study focuses on synthesis high-purity nanoparticles using method femtosecond laser ablation in liquid. The use ultrashort energy pulses lasers enables uniform materials at significantly lower power levels compared longer pulse continuous lasers. We investigate how various parameters affect morphology, phase, other characteristics synthesized nanoparticles. An innovative aspect our solution is its ability rapidly generate multi-component with high fidelity input target material yielding rate. Our research thus novel alloying CuCoMn1.75NiFe0.25 explore characterization properties consider electrocatalytic including density aluminum air batteries, well efficacy oxygen reduction reaction (ORR). Additionally, we report nanowire fabrication phenomenon achieved through nanojoining. findings from this shed light potential liquid (FLASiL) promising technique producing

Язык: Английский

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Surfing the Growth Parameters in the Quest for Low‐Power, Forming‐Free, and Highly Stable TiO_x Memristors for Nanoscale Electronics

Small, Год журнала: 2025, Номер unknown

Опубликована: Янв. 16, 2025

Understanding the resistive switching (RS) behavior of oxide-based memory devices at nanoscale is crucial for advancement high-integration density in-memory computing platforms. This study explores a comprehensive growth parameter space to address RS pulsed-laser-deposited substoichiometric TiO2 (TiOx) thin films in search tailored memristors with low-power consumption and high stability. Conductive-atomic-force-microscopy-based measurements facilitate deciphering nanoscale, providing direct avenue understand microstructure-property relationships. The present investigation reveals that rutile TiOx an optimal stoichiometric configuration exhibits superior attributes, enabling forming-free, low-power, highly stable functionalities nanoscale. By contrast, expected formation Magnéli phase within defective as-grown film hinders occurrence switching. Detailed analyses yield parametric diagram, valuable insights predict parameters fabricating on-demand TiOx-based devices. As bulk attributes do not always translate seamlessly leads pathway develop electronics promoting their integration into ultrahigh-density, low-energy-consuming advanced technologies across diverse disciplines including robotics, data storage, sensing.

Язык: Английский

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Memristive behaviour of PANI/Au hybrid nanocomposites synthesized via various routes

Materials Advances, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Typical non-linear current–voltage curves with a closed hysteresis loop (memristive-like behavior) were observed in aPS/PANI/Au hybrid nanocomposite devices.

Язык: Английский

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Interface engineering for enhanced memristive devices and neuromorphic computing applications

International Materials Reviews, Год журнала: 2025, Номер unknown

Опубликована: Март 3, 2025

Memristors, or memristive devices, have gained substantial attention as valuable building blocks for neuromorphic computing systems. Their dynamic reconfiguration enables simulation of essential analog synaptic and neuronal functionalities, making them promising candidates brain-inspired neural network computing. In recent years, conventional thin film materials low-dimensional nanomaterials been extensively explored in devices the development applications. Despite progress several technical challenges persist, such device-to-device uniformity high device density integration, requiring further improvement at single system level integration. Interface engineering, through careful design physical chemical nature interface two-terminal structure, emerges a method to address these challenges. This review highlights utilization engineering techniques optimize behavior, covering both including 0D quantum dots nanoparticles, 1D nanowire/nanotube, 2D materials, heterostructures nanoscale materials. Two main classes mechanisms involved specifically, electronic ionic modulating are described detail. Recent advancements optical artificial functionalities integration also reviewed. concludes with remaining how would be addressing issues. comprehensive serves guide atomic-scale research, while emphasizing broader potential kinetics enabling various exciting physiochemical properties reconfigurable functionalities.

Язык: Английский

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Recent Progress in Silver Nanowire‐Based Transparent Conductive Electrodes

Advanced Energy and Sustainability Research, Год журнала: 2025, Номер unknown

Опубликована: Март 27, 2025

In this work, the recent progress in silver nanowire (AgNW)‐based transparent conductive electrodes (TCEs) is summarized. First, AgNWs are compared with other mainstream materials, highlighting their superior conductivity, flexibility, and transparency, which make them prime candidates for application of next‐generation flexible electronic devices. The key synthesis strategies—including template‐based, hydrothermal/solvothermal, polyol methods—are then discussed how fabrication processes such as printing, spin coating, dip spray vacuum filtration govern electrical, optical, mechanical properties AgNW networks examined. Special attention given to composites carbon, polymers, metal oxides, underscoring these hybrid approaches boost durability, environmental stability. To illustrate AgNWs’ versatility, applications sensors, solar cells, skin, electromagnetic shielding, heating devices, nanogenerators, various electrode systems presented. Notably, capacity maintain functionality under deformation points broad potential wearable Despite advances, challenges remain. conclusion drawn by examining future prospects emerging fields smart textiles, advanced energy harvesting, electronics, emphasizing ongoing innovations composite engineering could further unlock impact on technologies.

Язык: Английский

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Electrical/light-modulated Kesterite Synaptic Memristor for Potential Near-Infrared Vision Imaging

Journal of Alloys and Compounds, Год журнала: 2025, Номер unknown, С. 180469 - 180469

Опубликована: Апрель 1, 2025

Язык: Английский

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Site-Selective Nanowire Synthesis and Fabrication of Printed Memristor Arrays with Ultralow Switching Voltages on Flexible Substrate

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(44), С. 60394 - 60403

Опубликована: Окт. 25, 2024

Large area electronics (LAE) with the capability to sense and retain information are crucial for advances in applications such as wearables, digital healthcare, robotics. The big data generated by these sensor-laden systems need be scaled down or processed locally. In this regard, brain-inspired computing in-memory have attracted considerable interest. However, suitable architectures mainly been developed using costly resource-intensive conventional lithography-based methods. There is a development of innovative, resource-efficient fabrication routes that enable devices concepts. Herein, we present ZnO nanowire (NW)-based memristors on polyimide substrate fabricated LAE-compatible route comprising solution processing printing technologies. High-resolution "drop-on-demand" "direct ink write" printers employed deposit metallic layers (silver gold) seed layer, needed site-selective growth NWs via low-cost hydrothermal method. printed show high bipolar resistance switching (ON/OFF ratio >103) between two nonvolatile states consistent at ultralow voltages (all showed amplitudes <200 mV), best performing device showing cycled over 4 orders magnitude SET RESET about 71 −57 mV, respectively. Thus, presented offer reliable lowest reported voltage prove competitive many nanofabrication-based devices. results potential technology holds large-area, low-voltage sensing electronic skin.

Язык: Английский

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Metal Tungstates for Resistive Memory Applications: A Mini Review

Current Applied Physics, Год журнала: 2024, Номер unknown

Опубликована: Дек. 1, 2024

Язык: Английский

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A Weight-Tunable Oxide Synaptic Transistor

Опубликована: Апрель 26, 2024

Artificial neural systems demonstrate outstanding performance by processing sensory data and realtime contexts in parallel, far surpassing conventional von Neumann computers terms of energy efficiency. This property has sparked widespread interest within the field artificial intelligence. In recent years, research on electric-double-layer synaptic transistors attracted much attention due to their similarity ionic motion modulation that biological synapses, thereby demonstrating a wealth potential application scenarios. this paper, we solid-state electrolyte-gated transistor uses TaO x with unique composition as insulating layer transparent indium tin oxide (ITO) semiconductor prepare thin-film (TFTs) signal transmission self-learning properties. The devices exhibit significant memory holding, bank voltage exceeds 6V at operating voltages below 10V. shift oxygen Void Sites transistor, entrained electrical forces created from input signals, plays crucial role simulating behavior. addition, device successfully simulates enhancement inhibition weights, such excitatory postsynaptic current (EPSC), inhibitory response (IPSC), paired pulse facilitation (PPF), long-term potentiation (LTP).

Язык: Английский

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