Numerical Analysis of High‐Efficiency Chalcogenide Perovskite Solar Cells (InBiSe3/GaBiSe3): Study of Single and Bilayer Configurations DOI Open Access
Lakhdar Benahmedi, Besbes Anissa, Djelti Radouan

и другие.

physica status solidi (a), Год журнала: 2024, Номер unknown

Опубликована: Дек. 13, 2024

Chalcogenide perovskites are emerging as a promising alternative to hybrid halide for optoelectronic applications, owing their excellent light absorption and chemical stability. This study investigates the performance of single‐ dual‐absorber solar cell devices using InBiSe 3 GaBiSe absorber materials, simulated capacitance simulator in one dimension software. The employ WS 2 electron transport layer CuO hole layer. For single‐absorber devices, achieve power conversion efficiency (PCE) 26.58%, with V OC 0.94 V, fill factor (FF) 86.82%, short‐circuit current density ( J SC ) 32.52 mA cm − . performs slightly lower, PCE 21.44%, 1.25 FF 87.83%, 19.49 bilayer configuration, incorporating top bottom layer, shows highest 30%, 1.06 32.78 , 85.97%. also examines effects temperature, shunt resistance, series resistance on device performance, well influence thickness, defect density, back contact variations.

Язык: Английский

Post‐Assembled Dipole Benzoic Acids Modified Me‐4PACz for Efficient and Stable Inverted Perovskite Solar Cells DOI Open Access

Yuan Fan,

Tangyue Xue,

Mengzhen Du

и другие.

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 16, 2025

Abstract Self‐assembled monolayers (SAMs), particularly those molecules composed of carbazole and phosphonic acid, are widely employed as effective hole‐selective layer (HSL) in inverted perovskite solar cells (PSCs). However, the insufficient chemical bond formation with metal oxides (ITO) self‐aggregation solvents acid SAM led to non‐uniform HSL, which turn affect power conversion efficiency (PCE) stability PSCs. Herein, a series benzoic materials (BAs), including p‐fluorobenzoic (FBA) p‐methylbenzoic (MBA), used post‐assembly effectively fill voids between [4‐(3,6‐dimethyl‐9H‐carbazole‐9‐yl)butyl]phosphonic (Me‐4PACz) form denser facilitates passivation buried interface. In addition, post‐assembled BAs different dipole moments can adjust work function Me‐4PACz facilitating transport extraction charge carriers. Consequently, PSCs based on Me‐4PACz/FBA HSL realize champion PCE 25.58%. Moreover, unencapsulated devices maintain 82% 94% after 800 h outdoor storage (RH≈60%) 2000 glove box, respectively. This technique enhances both device, blazing simple pathway for further development

Язык: Английский

Процитировано

1
Orthogonal Solvent Approach in Dimensionality-Heterointerface Perovskite Photovoltaics DOI
Xiaofeng Huang, Qiu Xiong, Zhenhuang Su

и другие.

ACS Energy Letters, Год журнала: 2025, Номер unknown, С. 982 - 990

Опубликована: Янв. 27, 2025

Язык: Английский

Процитировано

1
Amorphous Uio-66-Nh2 for Next-Generation Interface Engineering in Perovskite Solar Cells DOI

Nasim Kabir,

Alireza Abbasi, Yaser Abdi

и другие.

Опубликована: Янв. 1, 2025

The dual-interface engineering approach, encompassing bottom interface modulation and top surface passivation, has proven crucial for enhancing performance stability in lead halide perovskite solar cells (PSCs). In this study, we explore the application of amorphous metal-organic frameworks (aMOFs), specifically aUiO-66-NH2, modification assess intrinsic mechanisms by which it passivates surfaces layer. embedded aUiO-66-NH2 layer improves resistance to ultraviolet radiation alleviates tensile strain, thereby contributing much more stable devices facilitating oriented crystal growth Furthermore, detailed characterizations indicate that on effectively defects, reduces non-radiative recombination, extends carrier recombination lifetime, enhances electron diffusion length, lowers trap densities, optimizes crystallization film. Due these synergistic effects, bottom-interface modified device achieves a champion efficiency 20.8%, surpassing 19.4% reference (without passivation). Additionally, aMOF-passivated retain 79% 76% their initial efficiency, after four hours aging under white LED illumination at room temperature (25°C) nitrogen atmosphere, respectively.

Язык: Английский

Процитировано

0
Recent Advances in Buffer Layer Engineering for Performance Enhancement in Inverted Perovskite Solar Cells: Material-Based Classification DOI
Y. S. Lim, Soo Young Kim

Transactions on Electrical and Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 24, 2025

Язык: Английский

Процитировано

0
Design and optimization analysis of a lead-free perovskite solar cell based on copper (I) iodide hole transport layer DOI
George G. Njema, Vincent Kioko, Bonface N. Mwangi

и другие.

Optical and Quantum Electronics, Год журнала: 2024, Номер 56(12)

Опубликована: Ноя. 20, 2024

Язык: Английский

Процитировано

1
Unraveling Ion Migration Mechanisms under Operating Conditions in Perovskite Solar Cells by Variable-Load Transient Photoelectric Technique DOI
Y. Li, Shujie Qu, Jiyuan Wu

и другие.

The Journal of Physical Chemistry Letters, Год журнала: 2024, Номер unknown, С. 11903 - 11910

Опубликована: Ноя. 21, 2024

Ion migration in perovskite solar cells (PSCs) significantly impacts their photoelectric performance and physicochemical stability. Existing research has predominantly focused on inhibiting ion through chemical strategies or observing it under open-circuit short-circuit conditions. This focus led to a limited theoretical understanding control of practical conditions, constraining advances long-term In this study, we introduce novel variable-load transient technique (VL-TPT) investigate dynamics PSCs operating Results show that accumulation correlates with photogenerated carrier concentration During operation, decreases reduced load, because charge is transferred the external circuit, leading reduction within device. An unusual increase interface ions observed at low loads due interactions between charges accumulated potential well ions. Introducing FA+ MA0.75FA0.25PbI3 devices suppresses state but accelerates buildup These findings provide valuable insights for enhancing device stability performance.

Язык: Английский

Процитировано

1
Enhanced Performance of Monocrystalline Silicon Solar Cells Using Sol-Gel Synthesized Zinc Stannate Anti-Reflective Coating via Electro-Spraying Technique DOI
Ayman M. Mostafa, Gobinath Velu Kaliyannan, Gunasekaran Raja

и другие.

Ceramics International, Год журнала: 2024, Номер unknown

Опубликована: Дек. 1, 2024

Язык: Английский

Процитировано

1
Synergistic Passivation of Bulk and Interfacial Defects Improves Efficiency and Stability of Inverted Perovskite Solar Cells DOI Creative Commons

Saikiran Khamgaonkar,

Anny Leudjo Taka, Vivek Maheshwari

и другие.

Solar RRL, Год журнала: 2024, Номер unknown

Опубликована: Окт. 28, 2024

Defects both in bulk and at the interfaces serve as charge trapping sites for nonradiative recombination ion migration pathways, resulting degradation of perovskite solar cell efficiency stability. In this work, a strategy simultaneous passivation interfacial defects is reported. For polystyrene (PS) used an additive precursor which reduces structural by forming larger defect‐free grains. While F‐PEAI cation to passivate defects, present HTL/ETL interfaces. Furthermore, conducting control measurements with just modification (PS), interface (F‐PEAI), combination both, role individual defect strategies decoupled. As result well passivation, modified shows highest 22.32% high V oc 1.14 fill factor 80%. Moreover, cells have excellent stability retaining 92% 99% their initial after 1008 h 560 under ISOS‐ D1 D2 storage conditions. These results highlight importance improving

Язык: Английский

Процитировано

0
Numerical Analysis of High‐Efficiency Chalcogenide Perovskite Solar Cells (InBiSe3/GaBiSe3): Study of Single and Bilayer Configurations DOI Open Access
Lakhdar Benahmedi, Besbes Anissa, Djelti Radouan

и другие.

physica status solidi (a), Год журнала: 2024, Номер unknown

Опубликована: Дек. 13, 2024

Chalcogenide perovskites are emerging as a promising alternative to hybrid halide for optoelectronic applications, owing their excellent light absorption and chemical stability. This study investigates the performance of single‐ dual‐absorber solar cell devices using InBiSe 3 GaBiSe absorber materials, simulated capacitance simulator in one dimension software. The employ WS 2 electron transport layer CuO hole layer. For single‐absorber devices, achieve power conversion efficiency (PCE) 26.58%, with V OC 0.94 V, fill factor (FF) 86.82%, short‐circuit current density ( J SC ) 32.52 mA cm − . performs slightly lower, PCE 21.44%, 1.25 FF 87.83%, 19.49 bilayer configuration, incorporating top bottom layer, shows highest 30%, 1.06 32.78 , 85.97%. also examines effects temperature, shunt resistance, series resistance on device performance, well influence thickness, defect density, back contact variations.

Язык: Английский

Процитировано

0