Quality Control of Graphene Field-Effect Transistor Arrays Using Slit-Scanning Raman Microscopy

ACS Applied Electronic Materials, Год журнала: 2025, Номер 7(3), С. 1209 - 1216

Опубликована: Янв. 30, 2025

Large-scale graphene films enable the integration of field-effect transistor (GFET) arrays onto chips. However, transfer characteristics display variability across array. This significant statistical variation in quality combined with lack standardized protocols poses a major challenge to commercialization. In this study, we present rapid, extensive, and high-resolution inspection technique using slit-scanning Raman microscopy. imaging all GFETs was performed before conducting electrical measurements. The G-band 2D-band peak positions were used determine hole carrier density (nH) GFETs. Variations nH values correlated VDP values, which is critical parameter FET performance, validating approach as an method. Moreover, peaks tracked 100 at different processing stages, revealing that spatial variations originated during wet-transfer process. method vital for scalable manufacturing devices.

Язык: Английский

Wrinkled Graphene Field Effect Transistor in Heterodyne Mode for Ultrasensitive Detection of Exosomes toward Early Cancer Screening

ACS Applied Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 14, 2025

Язык: Английский

Graphene-Based Wearable Biosensors for Point-of-Care Diagnostics: From Surface Functionalization to Biomarker Detection

Materials Today Bio, Год журнала: 2025, Номер unknown, С. 101667 - 101667

Опубликована: Март 1, 2025

Язык: Английский