Photoelectric Performance of Two-Dimensional n-MoS2 Nanosheets/p-Heavily Boron-Doped Diamond Heterojunction at High Temperature DOI Open Access

De-yu Shen,

Changxing Li, Dandan Sang

и другие.

International Journal of Molecular Sciences, Год журнала: 2025, Номер 26(10), С. 4551 - 4551

Опубликована: Май 9, 2025

Two-dimensional (2D) n-MoS2 nanosheets (NSs) synthesized via the sol–gel method were deposited onto p-type heavily boron-doped diamond (BDD) film to form a n-MoS2/p-degenerated BDD (DBDD) heterojunction device. The PL emission results for suggest strong potential applications using yellow-light-emitting optoelectronic devices. From room temperature (RT) 180 °C, exhibits typical rectification characteristics with good thermal stability, ratio, forward current decrease, and reverse increase. Compared n-MoS2/p-lightly B-doped (non-degenerate) heterojunction, demonstrates significant improvement in both its ratio ideal factor. At 100 reaches maximum value is considered an high achieving optimal performance. When exceeds 140 transforms into Zener diode. heterojunction’s electrical dependence due Fermi level shifting resulting weakening of carrier interband tunneling injection. NSs/p-DBDD will broaden future research application prospects field high-temperature consumption

Язык: Английский

Photoelectric Performance of Two-Dimensional n-MoS2 Nanosheets/p-Heavily Boron-Doped Diamond Heterojunction at High Temperature DOI Open Access

De-yu Shen,

Changxing Li, Dandan Sang

и другие.

International Journal of Molecular Sciences, Год журнала: 2025, Номер 26(10), С. 4551 - 4551

Опубликована: Май 9, 2025

Two-dimensional (2D) n-MoS2 nanosheets (NSs) synthesized via the sol–gel method were deposited onto p-type heavily boron-doped diamond (BDD) film to form a n-MoS2/p-degenerated BDD (DBDD) heterojunction device. The PL emission results for suggest strong potential applications using yellow-light-emitting optoelectronic devices. From room temperature (RT) 180 °C, exhibits typical rectification characteristics with good thermal stability, ratio, forward current decrease, and reverse increase. Compared n-MoS2/p-lightly B-doped (non-degenerate) heterojunction, demonstrates significant improvement in both its ratio ideal factor. At 100 reaches maximum value is considered an high achieving optimal performance. When exceeds 140 transforms into Zener diode. heterojunction’s electrical dependence due Fermi level shifting resulting weakening of carrier interband tunneling injection. NSs/p-DBDD will broaden future research application prospects field high-temperature consumption

Язык: Английский

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