Applied Organometallic Chemistry,
Год журнала:
2024,
Номер
39(1)
Опубликована: Дек. 15, 2024
ABSTRACT
Lead‐free
tin
halide
perovskites,
particularly
Cs
2
SnBr
6
,
are
gaining
significant
attention
for
their
potential
in
optoelectronic
applications.
In
this
study,
we
investigate
the
material's
electrical
and
vibrational
properties
under
varying
illumination
conditions,
providing
novel
insights
into
impact
of
light
on
its
conduction
mechanisms.
was
synthesized
via
liquid‐phase
solid‐state
reactions,
report
comprehensive
analyses
impedance,
AC
conductivity,
dielectric
over
a
wide
frequency
range.
Notably,
our
results
reveal
that
light‐induced
photogenerated
charge
carriers
enhance
which
is
well
explained
by
overlapping
large‐polaron
tunneling
(OLPT)
model,
while
darkness,
material
follows
correlated
barrier
hopping
(CBH)
model.
Moreover,
Raman
spectroscopy
highlights
structural
changes,
including
slight
shortening
Sn–Br
bond
distances
illumination,
influences
frequencies
intensities.
These
findings
emphasize
crucial
role
tuning
responses
thus
demonstrating
considerable
promise
future
applications,
such
as
solar
cells
photodetectors.
Applied Organometallic Chemistry,
Год журнала:
2025,
Номер
39(2)
Опубликована: Янв. 20, 2025
ABSTRACT
Lead‐free
double
perovskites,
such
as
Cs
2
AgInCl
6
,
represent
a
promising
class
of
materials
for
optoelectronic
applications
due
to
their
favorable
properties
and
environmental
sustainability.
This
work
focuses
on
the
synthesis
comprehensive
characterization
employing
range
techniques
including
X‐ray
diffraction
(XRD)
structural
verification,
thermogravimetric
analysis
(TGA)
assess
thermal
stability,
UV–visible
absorption
measurements
determine
optical
bandgap
energy
3.32
eV.
Additionally,
we
explore
photoluminescence
(PL)
decay
elucidate
luminescent
compound.
Complex
impedance
are
performed
under
both
blue
red
light
investigate
electrical
behavior,
revealing
two
distinct
conduction
mechanisms:
overlapping
large–polaron
tunneling
(OLPT)
nonoverlapping
small–polaron
(NSPT).
We
analyze
implications
our
findings
current–voltage
(I–V)
behavior
trap
density,
further
supported
by
Raman
spectroscopy
illumination
conditions.
The
combined
insights
from
characterizations
highlight
potential
in
applications,
paving
way
its
use
advanced
devices.
Mn0.5Ni0.1Zn0.4TixFe2−xO4
(x
=
0.00,
0.03,
0.05,
0.07,
0.10)
was
synthesized
using
the
solid-state
reaction
method
to
analyze
effects
of
titanium
substitution
on
its
structural,
optical,
magnetic,
and
electrical
properties.
Characterization
techniques
employed
include
x-ray
diffraction
(XRD),
Fourier
transform
infrared
spectroscopy
(FTIR),
ultraviolet–visible
(UV–vis)
spectroscopy,
PPMS,
an
impedance
analyzer.
Rietveld
refinement
XRD
data
confirms
that
samples
adopt
a
spinel
cubic
structure
(Fd3̄m
space
group)
with
presence
secondary
Fe2O3
peaks
across
all
Ti-doped
samples.
The
lattice
parameter
shows
increasing
trend
increase
in
Ti
content.
theoretical
density
(ρth)
bulk
(ρB)
findings
reveal
ρth
exceeds
ρB,
suggesting
pores
are
formed
within
specimens.
FTIR
spectrum
displays
at
357
529
cm−1,
confirming
formation
metal
oxide
bonds
both
tetrahedral
octahedral
sites.
UV–vis
significant
absorption
UV
region
between
200
240
nm.
Tauc
plot
analysis
reveals
bandgap
energy
increases
higher
study
magnetic
hysteresis
loop
decrease
saturation
magnetization
(Ms)
as
Ti4+
content
rises,
likely
due
transition
Fe3+
ions
from
sites
non-magnetic
nature
titanium.
In
addition,
dielectric
constant
loss
tend
frequency,
while
resistivity
concentrations.
Notably,
5%
doping
sample
exhibited
high
low
elevated
frequencies,
indicating
promising
potential
for
high-frequency
applications.
