Interface engineering of polymer composite films for high-temperature capacitive energy storage
Chemical Engineering Journal,
Год журнала:
2024,
Номер
496, С. 154056 - 154056
Опубликована: Июль 21, 2024
Язык: Английский
Decoupling enhancements of breakdown strength and dielectric constant in PMIA-based composite films for high-temperature capacitive energy storage
Composites Part B Engineering,
Год журнала:
2024,
Номер
unknown, С. 112013 - 112013
Опубликована: Ноя. 1, 2024
Язык: Английский
Improved Energy Density at High Temperatures of FPE Dielectrics by Extreme Low Loading of CQDs
Materials,
Год журнала:
2024,
Номер
17(14), С. 3625 - 3625
Опубликована: Июль 22, 2024
Electrostatic
capacitors,
with
the
advantages
of
high-power
density,
fast
charging-discharging,
and
outstanding
cyclic
stability,
have
become
important
energy
storage
devices
for
modern
power
electronics.
However,
insulation
performance
dielectrics
in
capacitors
will
significantly
deteriorate
under
conditions
high
temperatures
electric
fields,
resulting
limited
capacitive
performance.
In
this
paper,
we
report
a
method
to
improve
high-temperature
polymer
dielectric
by
incorporating
an
extremely
low
loading
0.5
wt%
carbon
quantum
dots
(CQDs)
into
fluorene
polyester
(FPE)
polymer.
CQDs
possess
electron
affinity
energy,
enabling
them
capture
migrating
carriers
exhibit
unique
Coulomb-blocking
effect
scatter
electrons,
thereby
restricting
migration.
As
result,
breakdown
strength
properties
CQD/FPE
nanocomposites
are
enhanced.
For
instance,
density
at
room
temperature,
efficiency
(η)
exceeding
90%,
reached
9.6
J/cm
Язык: Английский
Tailoring a dual crosslinking network in all-organic aramid composite film for superior high-temperature capacitive energy storage
Energy storage materials,
Год журнала:
2025,
Номер
unknown, С. 104180 - 104180
Опубликована: Март 1, 2025
Язык: Английский
First-principles computational analysis of the electronic and charge transport anisotropy of NbOX2 (X = Cl, Br, I) nanoribbons and nanosheets
Applied Physics Letters,
Год журнала:
2025,
Номер
126(22)
Опубликована: Июнь 2, 2025
The
use
of
NbOX2
oxyhalide
(X
=
Cl,
Br,
I)
nanoribbons
and
nanosheets
in
next-generation
nanoelectronic
devices
remains
unfulfilled
because
the
impact
fundamental
electronic
properties
these
materials
on
their
practical
device
applications
poorly
understood.
present
work
applies
first-principles
density
functional
theory
calculations
to
investigate
anisotropic
quantum
confinement
effects
performance
field
effect
transistors.
Our
results
reveal
direction-dependent
electron
transport
behaviors,
with
most
efficient
occurring
along
Nb-X
axis.
Quantum
leads
bandgap
widening,
Nb–O-oriented
exhibiting
more
stable
properties.
In
addition,
charge
delocalization
is
confirmed
axis,
it
strengthens
increasing
halogen
constituent
mass.
Язык: Английский