Physical review. B./Physical review. B,
Год журнала:
2024,
Номер
109(24)
Опубликована: Июнь 24, 2024
ZnO
nanowire
(NW)
lasing
driven
by
mid-infrared
(MIR)
laser
pulses
has
attracted
significant
attention
owing
to
its
remarkable
wavelength-independent
threshold
and
potential
applications
in
diverse
situations.
However,
the
properties
of
MIR
laser-driven
microwire
(MW)
are
rarely
studied
when
wire
diameter
is
increased
from
nanoscale
microscale,
comparable
wavelength
driving
laser.
Here
we
experimentally
measured
MW
with
different
polarizations.
The
measurements
show
that
polarized
along
$c$
axis
was
more
efficient
for
smaller
than
wavelength,
while
polarization
dependence
ambiguous
greater
wavelength.
Through
modeling
process
MW,
observed
reproduced
can
be
attributed
combined
effect
optical
interference
varying
absorption
MWs.
former
related
latter
sensitive
sample
growth
condition.
Our
findings
shed
light
on
feasibility
manipulation
lasing.
Materials Futures,
Год журнала:
2023,
Номер
3(1), С. 012301 - 012301
Опубликована: Сен. 14, 2023
Abstract
Detecting
light
from
a
wealth
of
physical
degrees
freedom
(e.g.
wavelength,
intensity,
polarization
state,
phase,
etc)
enables
the
acquirement
more
comprehensive
information.
In
past
two
decades,
low-dimensional
van
der
Waals
materials
(vdWMs)
have
established
themselves
as
transformative
building
blocks
toward
lensless
optoelectronics,
which
is
highly
beneficial
for
optoelectronic
system
miniaturization.
This
review
provides
overview
on
recent
development
vdWM
polarized
photodetectors.
To
begin
with,
exploitation
pristine
1D/2D
vdWMs
with
immanent
in-plane
anisotropy
and
related
heterostructures
filterless
polarization-sensitive
photodetectors
introduced.
Then,
we
systematically
epitomized
various
strategies
to
induce
photosensitivity
enhance
degree
photodetectors,
including
quantum
tailoring,
construction
core–shell
structures,
rolling
engineering,
ferroelectric
regulation,
strain
etc,
emphasis
fundamental
principles.
Following
that,
ingenious
applications
based
multiplexing
optical
communications
enhanced-contrast
imaging,
been
presented.
end,
current
challenges
along
future
prospects
this
burgeoning
research
field
underscored.
On
whole,
depicts
fascinating
landscape
next-generation
high-integration
multifunctional
systems.
Materials Horizons,
Год журнала:
2023,
Номер
10(9), С. 3369 - 3381
Опубликована: Янв. 1, 2023
Programmable
optoelectronic
dichroism
has
been
demonstrated
by
quantum
tailoring
of
Bi
2
S
3
nanowire
photodetectors,
and
multiplexing
optical
communications
as
well
polarimetric
imaging
have
developed.
ACS Applied Materials & Interfaces,
Год журнала:
2024,
Номер
16(11), С. 13914 - 13926
Опубликована: Март 6, 2024
Polarization-sensitive
photodetectors
have
attracted
considerable
attention
owing
to
their
potential
application
prospects
in
navigation,
optical
switching,
and
communication.
However,
it
remains
challenging
develop
a
facile
effective
strategy
simultaneously
meet
the
demands
of
low
power
consumption,
high
performance,
excellent
polarization
sensitivity.
Herein,
series
low-symmetry
two-dimensional
(2D)
ReSe2
Schottky
with
geometry-asymmetric
contacts
are
constructed.
These
devices
exhibit
photoelectrical
performance
impressive
sensitivity
self-powered
mode
difference
barrier
height
induced
by
asymmetric
contact
areas,
interfacial
states,
thickness
difference.
Particularly,
an
outstanding
responsivity
379
mA/W,
decent
specific
detectivity
6.8
×
1011
Jones,
light
on/off
ratio
(Ilight/Idark)
over
105
under
635
nm
illumination
achieved.
Scanning
photocurrent
mapping
(SPCM)
measurements
further
confirm
that
ReSe2/drain
overlapped
region
(corresponding
smaller
area
side)
higher
plays
dominant
role
generation
photocurrent.
Furthermore,
proposed
device
displays
ratios
(PRs)
3.1
3.6
at
zero
bias
808
irradiation,
respectively.
The
high-resolution
single-pixel
imaging
capability
is
also
demonstrated.
This
work
reveals
great
photodetector
for
high-performance,
self-powered,
polarization-sensitive
photodetection.
Science China Materials,
Год журнала:
2024,
Номер
67(3), С. 842 - 851
Опубликована: Фев. 7, 2024
A
highly
sensitive
self-biased
ultraviolet
(UV)
photodetector
is
largely
desirable
in
practical
applications.
This
work
develops
a
one-dimensional
ZnO
homojunction
photodiode,
which
includes
an
Sb-doped
microwire
with
surface-covered
by
Ag
nanowires
(AgNWs@ZnO:Sb
MW),
MgO
buffer
nanolayer,
and
film.
The
photodiode
dramatically
to
UV
light,
its
photosensitive
performances
of
large
on/off
ratio
approximately
107,
maximum
responsivity
292.2
mA
W−1,
high
specific
detectivity
6.9
×
1013
Jones,
rapid
response
speed
microseconds
(16.4/465.1
µs)
under
365-nm
light
illumination
via
10
µW
cm−2
at
0
V
bias.
In
particular,
the
highest
external
quantum
efficiency
approaching
99.3%
achieved.
modulation
nanofilm
surface-modified
AgNWs
on
improved
photoresponse
was
carefully
examined.
Acting
as
optical
receiver,
this
further
integrated
into
communication
system
that
can
transmit
information
real
time.
Also,
9
array
based
AgNWs@p-ZnO:Sb
MW/i-MgO/n-ZnO
exhibited
uniform
distribution
could
be
used
workable
photosensory
achieve
good
spatial
resolution
images.
proposes
promising
route
for
design
high-performance
photodetectors
realistic
applications
low
power
consumption
large-scale
construction.
Advanced Optical Materials,
Год журнала:
2024,
Номер
12(28)
Опубликована: Июль 2, 2024
Abstract
Photodetectors
with
good
polarization
detection
ability
are
promising
in
many
applications,
such
as
remote
sensing
imaging
and
environmental
monitoring.
However,
the
traditional
systems
fall
short
meeting
integration
demands
of
integrated‐circuits
field
due
to
additional
optical
elements.
The
emerging
2D
materials
in‐plane
anisotropic
structures
provide
a
possible
method
fabricate
remarkable
detectors.
Modulating
band
structure
by
gate
voltage
is
an
important
strategy
for
developing
optoelectronic
devices.
Herein,
polarized
photodetector
based
on
PdSe
2
/MoS
out‐of‐plane
heterojunction
fabricated.
Due
its
unique
heterostructure,
device
exhibits
excellent
photoresponse
characteristics
sensitivity,
including
responsivity
10.19A/W,
extremely
high
external
quantum
efficiency
2429%,
fast
rise/decay
time
68/192
µs,
photocurrent
anisotropy
ratio
3.09.
Based
adjustment
built‐in
electric
through
voltage,
performance
can
be
accordingly
modulated.
As
increases
from
−30
30
V,
gradually
7.5
13A/W
detectivity
1.53
2.63
×
10
9
Jones.
Finally,
olarization
demonstrated
at
different
angles.
findings
indicate
that
devices
exhibit
significant
potential
photoelectric
detection.
Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Ноя. 9, 2024
Abstract
Self‐powered
near‐infrared
(NIR)
photodetectors
are
essential
for
surveillance
systems,
sensing
in
IoT
electronics,
facial
recognition,
health
monitoring,
optical
communication
networks,
night
vision,
and
biomedical
imaging.
However,
silicon
commercial
detectors
need
external
power
to
operate
cooling
suppress
large
dark
currents.
This
work
demonstrates
a
new
class
of
CMOS‐compatible
self‐powered
NIR
photodetector
based
on
ferroelectric
5‐nm
thick
ZrO
2
films
which
do
not
require
therefore
have
two
key
advantages
over
Si,
at
the
same
time
comparable
performance
metrics.
At
room‐temperature,
under
940
nm
wavelength
illumination
(1.4
mW
cm
−2
density,
10
Hz
repetition
rate),
without
any
applied,
fast
rise
fall
times
≈2
4
µs,
respectively,
achieved
Al/Si/SiO
x
/ZrO
/ITO
devices,
along
with
responsivity,
detectivity
sensitivity
values
up
≈3.4
A
W
−1
,
1.2
×
Jones
4.2
3
far
exceeding
all
other
emerging
systems.
Furthermore,
dual‐band
detection
is
shown
different
wavelengths,
proof‐of‐concept
feasibility
being
demonstrated
smart
identification
targets.
Therefore,
it
demonstrated,
first
time,
that
coupling
together
pyroelectric
effect,
photovoltaic
effect
novel
method
significantly
enhance
‐based
region.
Advanced Optical Materials,
Год журнала:
2023,
Номер
12(5)
Опубликована: Ноя. 5, 2023
Abstract
High‐speed
and
sensitive
UV–Vis
photodetectors
have
been
constructed
based
on
a
typical
1D
van
der
Waals
material,
antimony
sulfide
(Sb
2
S
3
).
Impressively,
the
Sb
nanowire
photodetector
demonstrates
pronounced
photosensitivity
exhibiting
remarkable
on/off
ratio
of
≈2800
under
power
density
318
mW
cm
−2
.
In
addition,
high
responsivity,
an
outstanding
detectivity,
short
response/recovery
time
270
A
W
−1
,
4.37
×
10
13
Jones,
10/12
ms
are
achieved.
The
competitive
is
associated
with
intrinsic
Mie
resonance
nanowire,
which
conducive
to
enhancing
coupling
photosensitive
channel
incident
light.
By
virtue
unique
structural
nature
in
both
extrinsic
perspectives,
manifest
distinct
polarization‐discriminating
photoresponse
optimal
dichroic
reaching
≈7.2.
Moreover,
demonstrate
stable
from
room
temperature
160
°C,
these
nanodevices
durable
against
long‐term
high‐temperature
heating
treatment
at
up
300
°C.
Taking
advantage
excellent
thermal
robustness,
high‐temperature‐proof
optoelectronic
imaging
dual‐channel
optical
communication
applications
demonstrated
low‐dimensional
materials.
On
whole,
this
study
provides
new
option
for
advanced
multifunctional
system
extreme
working
environments.
