Self-Powered In2Se3/Ge Photodetector from Visible to Short-Wave Infrared Region DOI

Kuangkuang Li,

Wenbo Li, Ling Kang

и другие.

Optics Letters, Год журнала: 2024, Номер 50(1), С. 29 - 29

Опубликована: Ноя. 25, 2024

An In 2 Se 3 /Ge heterojunction is fabricated via molecular beam epitaxy. The p–n junction device features a broadened photosensitive spectrum ranging from visible (VIS) to short-wave infrared (SWIR) region (400–1700 nm). Notably, self-powered high responsivity of 0.32 A/W@450 nm and 0.52 A/W@1550 nm, decent specific detectivity 3.2 × 10 11 Jones@450 5.2 Jones@1550 at zero bias are achieved. Moreover, our photodetector exhibits fast response speed with sub-millisecond time. These results can be attributed the quality –Ge interface. Benefiting superposable dual-band photoresponse, potential for encrypted optical communication has been demonstrated.

Язык: Английский

Self‐Powered, Broadband, and Polarization‐Sensitive Photodetector with Nb‐WS2/Ta2NiSe5 Van der Waals Heterostructure DOI Open Access

Jinling Xie,

Jiayue Han, Jiaming Jiang

и другие.

Advanced Optical Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 10, 2025

Abstract Photodetectors play a crucial role in various applications, including communication, imaging, environmental monitoring, and security surveillance. However, developing photodetectors that can simultaneously achieve high sensitivity, responsivity, low power consumption, polarization broadband detection remains significant challenge. In this investigation, the anisotropic properties of Ta₂NiSe₅ are utilized for mid‐infrared polarization‐sensitive photodetection select suitable 2D materials to enhance device performance. Nb‐WS₂/Ta₂NiSe₅ Van der Waals heterojunction photodetector with consumption response, covering wavelength range from 405 nm 3.5 µm, based on built‐in field. Additionally, shows excellent performance at 660 nm, responsivity 57.64 A W −1 , an external quantum efficiency (EQE) 10 854%, rapid response (118 µs), recovery times (13 µs). Furthermore, structure modulates charge distribution interface, enhancing sensitivity ratio 2.2 µm. This work provides novel strategy development multifunctional, high‐performance opens new avenues design application next‐generation advanced devices.

Язык: Английский

Процитировано

1
Unraveling the Properties of Interdigital Electrode-based γ-In2Se3 Photodetectors for Optimal Performance DOI Creative Commons

Yogesh Hase,

Shruti Shah,

Somnath Ladhane

и другие.

IEEE Sensors Journal, Год журнала: 2024, Номер 24(17), С. 27380 - 27392

Опубликована: Июль 16, 2024

We successfully deposited In2Se3 films on the interdigital electrode (IDE) substrates using RF-magnetron sputtering method with optimized parameters. The formation of high-quality γ-In 2 Se xmlns:xlink="http://www.w3.org/1999/xlink">3 XRD, Raman spectroscopy, XPS, FE-SEM, and EDS. Subsequently, we fabricated -based photodetectors ITO-coated IDE detailed investigation focused influence spacing, bias voltage, light intensity photodetector properties. an spacing 335 μm exhibited outstanding properties, including highest photoresponsivity 14.8 μA/W detectivity 31.3x10 7 Jones. It also demonstrated a fast rise time 99 ms decay 61 ms. In voltage variation study, linear relationship between change in current potential, indicating ohmic contact ITO electrodes. Examining photoresponse, varied power density from 5 mW/cm xmlns:xlink="http://www.w3.org/1999/xlink">2 to 30 . observed direct proportionality generated photocurrent incident intensity. However, at higher intensities, there was decrease photodetectivity 3.97x10 xmlns:xlink="http://www.w3.org/1999/xlink">8 Jones 1.16x10 reduction 33.36 9.73 for photodetectors. conclusion, properties devices are critically influenced by

Язык: Английский

Процитировано

1
Improvement of charge trapping memory performance by modulating band alignment with oxygen plasma DOI
Puhao Chai, Jun Zhu,

Kuangkuang Li

и другие.

Applied Physics Letters, Год журнала: 2024, Номер 125(17)

Опубликована: Окт. 21, 2024

Metal-oxide charge trapping memory (CTM) integration into amorphous and organic flexible devices encounters challenges due to high-temperature treatment. Our approach enhances performance via room-temperature oxygen plasma treatment, subtly adjusting surface band alignment without changing the original material structure roughness. Infiltration of induces bending, creating a barrier for trapping. The device with treatment exhibits an impressive 19.06 V window density 3.58 × 1013/cm2. In comparison, untreated only has 5.56 V, demonstrating that significantly improves characteristics. retention rate outstanding stability, potentially reaching 94% after decade. It should be noted careful control during is crucial maintaining optimal effects. This facile, efficient technique, applicable various oxide layers, offers way future advancements in metal-oxide CTM technology.

Язык: Английский

Процитировано

0
Self-Powered In2Se3/Ge Photodetector from Visible to Short-Wave Infrared Region DOI

Kuangkuang Li,

Wenbo Li, Ling Kang

и другие.

Optics Letters, Год журнала: 2024, Номер 50(1), С. 29 - 29

Опубликована: Ноя. 25, 2024

An In 2 Se 3 /Ge heterojunction is fabricated via molecular beam epitaxy. The p–n junction device features a broadened photosensitive spectrum ranging from visible (VIS) to short-wave infrared (SWIR) region (400–1700 nm). Notably, self-powered high responsivity of 0.32 A/W@450 nm and 0.52 A/W@1550 nm, decent specific detectivity 3.2 × 10 11 Jones@450 5.2 Jones@1550 at zero bias are achieved. Moreover, our photodetector exhibits fast response speed with sub-millisecond time. These results can be attributed the quality –Ge interface. Benefiting superposable dual-band photoresponse, potential for encrypted optical communication has been demonstrated.

Язык: Английский

Процитировано

0