In
this
study,
we
conducted
an
experiment
in
which
a
source
material
was
sprayed
onto
substrate
with
simultaneous
N+
ion
beam
injections.
Hexamethyldisiloxane
(HMDSO)
or
tetraethyl
orthosilicate
(TEOS)
used
as
material.
The
energy
of
ions
set
at
100
eV.
temperature
room
temperature.
As
result
each
trial,
film
deposited
on
the
both
HMDSO
and
TEOS
cases.
analyzed
by
x-ray
photoelectron
spectroscopy
(XPS)
Fourier
transform
infrared
(FTIR)
spectroscopy.
We
found
that
silicon
dioxide
nitrogen
atoms
(2–4
at.
%)
were
included
film.
For
comparison,
trial
also
hexamethyldigermane
(HMDG)
30
eV
Although
HMDG
had
no
oxygen
its
molecule,
XPS
FTIR
results
showed
germanium
oxide
containing
(2
%).
Journal of Materials Chemistry C,
Год журнала:
2024,
Номер
12(32), С. 12150 - 12178
Опубликована: Янв. 1, 2024
This
paper
reviews
recent
research
on
III–V
nitrides,
including
their
physical
and
chemical
properties,
synthesis
methods,
applications
in
optoelectronic
devices.
Applied Physics Letters,
Год журнала:
2025,
Номер
126(8)
Опубликована: Фев. 24, 2025
Zero-dimensional/one-dimensional
(0D/1D)
heterojunctions
have
excellent
potential
in
the
field
of
optoelectronic
devices
due
to
synergy
effect
different
dimensions.
Most
reported
0D/1D
heterojunction
photodetectors
only
focus
on
optimizing
separation
efficiency
photogenerated
carriers
at
interface.
However,
within
quantum
dots
(QDs)
cannot
be
transferred
electrodes,
resulting
recombination
separated
Therefore,
response
speed
most
is
still
limited
order
seconds
(s)
and
milliseconds
(ms).
In
our
work,
we
demonstrate
a
nanosecond
(ns)
scale
ZnO/CuO
photodetector
with
efficient
photoelectric
conversion
by
engineering
type-II
Herein,
surface
defect
states
ZnO
QDs
are
deliberately
introduced
as
“electrons
storage
pool”
suppress
carrier
further
promote
separation,
which
has
been
confirmed
photoluminescence
(PL)
time-resolved
(TRPL).
As
result,
exhibited
performance
ultrafast
20
ns,
responsivity
213
A/W,
detectivity
2.95
×
1011
Jones,
respectively.
This
related
interface
provides
feasible
strategy
for
development
high-performance
photodetectors.
Self-powered
SBPDs
based
on
PdSe
2
/Al
O
3
/AlGaN
vdW
heterostructures
exhibited
high
performance
at
various
temperatures,
and
the
physical
mechanism
is
explained
by
competition
between
generation
of
excess
carriers
recombination
rates.
