ZnO@NiO core-shell heterojunction photoanode modified with NiOOH co-catalyst for high-performance self-powered photoelectrochemical-type UV photodetector

Applied Surface Science, Год журнала: 2024, Номер unknown, С. 161579 - 161579

Опубликована: Окт. 1, 2024

Язык: Английский

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Growth and UV detection properties of Sb-doped β-Ga2O3 microbelts based on seed layer

Optical Materials, Год журнала: 2025, Номер unknown, С. 116861 - 116861

Опубликована: Фев. 1, 2025

Язык: Английский

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A Review of ε-Ga2O3 Films: Fabrications and Photoelectric Properties

Materials, Год журнала: 2025, Номер 18(11), С. 2630 - 2630

Опубликована: Июнь 4, 2025

Gallium oxide (Ga2O3), as an ultra-wide bandgap semiconducting material, has attracted extensive research interest in recent years. Owing to its outstanding electrical and optical properties, well high reliability, Ga2O3 shows great potential power electronics, optoelectronics, memory devices, so on. Among all the different polymorphs, ε-Ga2O3 is second most thermally stable phase. It a hexagonal crystal structure, which contributes isotropic physical properties suitable growth on low-cost commercial substrates, such Al2O3, Si (111). However, there are far fewer works comparison with β Aiming provide comprehensive view current of support future research, this review conducts detailed summarizations for fabrication processes thin films photoelectrical ε-Ga2O3-based photodetectors. The effects deposition parameters film phases qualities discussed. forming mechanisms ε phase prepared by chemical vapor depositions (CVDs) (PVDs) analyzed, respectively. Conclusions made concerning relationships between microstructures properties. In addition, strategies further improving performance briefly summarized.

Язык: Английский

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Enhancing UV photodetector efficiency using germanium nanowalls synthesized by pulsed laser ablation technique

Journal of Materials Science Materials in Electronics, Год журнала: 2024, Номер 35(36)

Опубликована: Дек. 1, 2024

Язык: Английский

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