Double-pulsed-induced medium-range order in Sn-doped Ga2O3 thin films: A strategy for enhanced record-breaking electrical properties DOI
Yao Wang, Long Wang, Yanbo Dong

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(15)

Опубликована: Апрель 1, 2025

This study explores Sn-doped Ga2O3 thin films synthesized via the double-pulse metalorganic chemical vapor deposition (MOCVD) method, highlighting its unique advantages in improving film microstructure and electrical properties. The results show that technique, through intermittent atomic supply, promotes medium-range ordering of Sn atoms within lattice, reducing lattice defects enhancing crystallinity. Secondary ion mass spectrometry further reveals a doping activation rate 95%. Notably, exhibit exceptional performance, achieving Hall mobility 175.61 cm2/V·s at carrier concentration 2.17 × 1018 cm−3. value represents record-high for β-Ga2O3 this concentration, significantly surpassing performance prepared conventional continuous methods. offers valuable insights into mechanisms MOCVD potential Ga2O3-based high-performance electronic devices, providing an effective pathway optimizing next-generation materials.

Язык: Английский

Ultrahigh responsivity solar-blind high electron mobility photodetector utilizing a β-Ga2O3/GaN heterojunction DOI
Zeming Li, Rensheng Shen,

Yuantao Zhang

и другие.

Materials Today Physics, Год журнала: 2025, Номер unknown, С. 101683 - 101683

Опубликована: Фев. 1, 2025

Язык: Английский

Процитировано

0
Double-pulsed-induced medium-range order in Sn-doped Ga2O3 thin films: A strategy for enhanced record-breaking electrical properties DOI
Yao Wang, Long Wang, Yanbo Dong

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(15)

Опубликована: Апрель 1, 2025

This study explores Sn-doped Ga2O3 thin films synthesized via the double-pulse metalorganic chemical vapor deposition (MOCVD) method, highlighting its unique advantages in improving film microstructure and electrical properties. The results show that technique, through intermittent atomic supply, promotes medium-range ordering of Sn atoms within lattice, reducing lattice defects enhancing crystallinity. Secondary ion mass spectrometry further reveals a doping activation rate 95%. Notably, exhibit exceptional performance, achieving Hall mobility 175.61 cm2/V·s at carrier concentration 2.17 × 1018 cm−3. value represents record-high for β-Ga2O3 this concentration, significantly surpassing performance prepared conventional continuous methods. offers valuable insights into mechanisms MOCVD potential Ga2O3-based high-performance electronic devices, providing an effective pathway optimizing next-generation materials.

Язык: Английский

Процитировано

0