npj Computational Materials, Год журнала: 2025, Номер 11(1)
Опубликована: Май 9, 2025
Язык: Английский
Science China Information Sciences, Год журнала: 2024, Номер 67(6)
Опубликована: Май 29, 2024
Abstract Over the past 70 years, semiconductor industry has undergone transformative changes, largely driven by miniaturization of devices and integration innovative structures materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) graphene are pivotal in overcoming limitations silicon-based technologies, offering approaches transistor design functionality, enabling atomic-thin channel transistors monolithic 3D integration. We review important progress application 2D future information technology, focusing particular on microelectronics optoelectronics. comprehensively summarize key advancements across material production, characterization metrology, electronic devices, optoelectronic heterogeneous silicon. A strategic roadmap challenges for from basic research to industrial development outlined. To facilitate such a transition, technologies tools dedicated must be developed meet standards, employment AI growth, characterizations, circuit will essential. It is time academia actively engage with drive next 10 years research.
Язык: Английский
Процитировано
31
Nature Reviews Materials, Год журнала: 2025, Номер unknown
Опубликована: Фев. 14, 2025
Язык: Английский
Процитировано
8
Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Янв. 17, 2025
Abstract High‐performance deep ultraviolet (DUV) spectroscopy is crucial in driving innovations for biomedical research, clinical diagnosis, and material science. DUV resonant nanostructures have shown capabilities significantly improving sensitivity. However, they encounter significant challenges practical applications, including instability due to oxidation light‐induced damage, the strong photoluminescent noise background from their constituent materials. An efficient robust platform based on polaritonic properties all‐dielectric silicon (Si) metasurfaces proposed. Unlike conventional dielectric that rely Mie‐type modes, this approach leverages resonances Si nanostructures—a striking yet underexplored property driven by interband transitions regime—for nanophotonic sensing. A Kerker‐type void metasurface providing near‐field enhancement localized surface designed fabricated. The facilitates double‐resonance Raman scattering, a process reveals key information about lattice dynamics electronic structures, analyzing 2D semiconductor monolayers. It also demonstrates superior stability solvents enhances biomolecule autofluorescence. These demonstrate versatile potential of as scalable, interdisciplinary advanced research investigation emerging nanomaterials.
Язык: Английский
Процитировано
2
Scientific Reports, Год журнала: 2025, Номер 15(1)
Опубликована: Янв. 29, 2025
Time-resolved momentum microscopy is an emerging technique based on photoelectron spectroscopy for characterizing ultrafast electron dynamics and the out-of-equilibrium electronic structure of materials in entire Brillouin zone with high efficiency. In this article, we introduce a setup time-resolved energy-filtered microscope coupled to custom-made high-harmonic generation photon source driven by multi-100 kHz commercial Yb-ultrafast laser that delivers fs pulses extreme ultraviolet range. The includes nonlinear pulse compression stage employing spectral broadening Herriott-type bulk-based multi-pass cell. This element allows flexible tuning driving duration, providing versatile featuring two operational modes designed enhance either energy or time resolution. We show capabilities system tracing conduction band valleys bulk crystal 2D semiconductor WS2. Using uncompressed pulses, demonstrate resolution better than (107 ± 2) meV, while compressed lead (48.8 17) fs.
Язык: Английский
Процитировано
1
npj Quantum Materials, Год журнала: 2025, Номер 10(1)
Опубликована: Фев. 14, 2025
Язык: Английский
Процитировано
1
Physical Review Letters, Год журнала: 2025, Номер 134(9)
Опубликована: Март 4, 2025
We use density matrix renormalization group (DMRG) and variational exact diagonalization (VED) to calculate the single-electron removal spectral weight for Hubbard-Holstein model at low electron densities. Tuning strength of electron-phonon coupling Hubbard repulsion allows us contrast results a liquid polarons versus bipolarons. The former shows up Fermi energy, as expected metal. latter has gap in its weight, set by bipolaron binding although this is also (strongly correlated) This difference suggests that angle-resolved photoemission spectroscopy could be used identify liquids pre-formed pairs. Furthermore, we show one-dimensional incoherent bipolarons well approximated ``Bose sea'' bosons are hard-core momentum space, occupying momenta inside sea but otherwise noninteracting. new proposal strongly correlated many-body wave function opens way studying various other properties (nonsuperconducting) preformed pairs any dimension.
Язык: Английский
Процитировано
1
Newton, Год журнала: 2025, Номер unknown, С. 100066 - 100066
Опубликована: Апрель 1, 2025
Язык: Английский
Процитировано
1
Physical Review X, Год журнала: 2024, Номер 14(4)
Опубликована: Дек. 13, 2024
Understanding quantum materials—solids in which interactions among constituent electrons yield a great variety of novel emergent phenomena—is forefront challenge modern condensed matter physics. This goal has driven the invention and refinement several experimental methods, can spectroscopically determine elementary excitations correlation functions that material properties. Here we focus on future theoretical trends resonant inelastic x-ray scattering (RIXS), is remarkably versatile rapidly growing technique for probing different charge, lattice, spin, orbital materials. We provide forward-looking introduction to RIXS outline how this poised deepen our insight into nature materials their electronic phenomena. Published by American Physical Society 2024
Язык: Английский
Процитировано
6
APL Materials, Год журнала: 2024, Номер 12(5)
Опубликована: Май 1, 2024
THz-pulse driven scanning tunneling microscopy (THz-STM) enables access to the ultrafast quantum dynamics of low-dimensional material systems at simultaneous temporal and atomic spatial resolution. State-selective requires precise amplitude phase control THz pulses combined with quantitative near-field waveform characterization. Here, we employ our state-of-the-art THz-STM multi-MHz repetition rates, efficient generation, precisely tunable waveforms investigate a single sulfur vacancy in monolayer MoS2. We demonstrate that 2D transition metal dichalcogenides (TMDs) are an ideal platform for sampling by cross-correlation. Furthermore, determine voltage via QEV scans, which measure rectified charge Q as function field E dc bias Vdc. Mapping complex energy landscape localized states resolution down 0.01 electrons per pulse facilitates state-selective HOMO LUMO orbitals charged vacancy.
Язык: Английский
Процитировано
4
Advances in Physics X, Год журнала: 2024, Номер 9(1)
Опубликована: Июль 26, 2024
Excitons – two-particle correlated electron-hole pairs are the dominant low-energy optical excitation in broad class of semiconductor materials, which range from classical silicon to perovskites, and two-dimensional organic materials. The study excitons has been brought on a new level detail by application photoemission momentum microscopy technique that dramatically extended capabilities time- angle resolved spectroscopy. Here, we review how photoelectron detection scheme enables direct access energy landscape bright dark excitons, and, more generally, momentum-coordinate exciton wavefunction. Focusing materials semiconductors, first discuss typical fingerprint highlight it is possible obtain information not only electron- but also hole-component. Second, focus recent orbital tomography such this provides unique real-space properties We studies performed transition metal dichalcogenides semiconductors lead very similar conclusions, manner, strength for excitations semiconductors.
Язык: Английский
Процитировано
4