Strain‐Engineered Level Alignment in the MoTe2/WSe2 Heterobilayer DOI Creative Commons
Muhammad Sufyan Ramzan, Caterina Cocchi

physica status solidi (RRL) - Rapid Research Letters, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 17, 2024

When stacked into heterostructures, layered transition metal dichalcogenides (TMDCs) exhibit peculiar electronic and optical properties that may differ substantially from those of their constituents largely depend on the level alignment. For example, MoTe 2 /WSe heterobilayer exhibits a type I band lineup, which can be exploited in emitting devices but limits charge separation. In this first‐principle study based density functional theory many‐body perturbation theory, strain is proposed as an effective means to make II heterostructure. By exploring several configurations where biaxial applied either or both monolayers, top valence bottom conduction are found at different points k‐space leading indirect‐to‐direct bandgap when lattice constant WSe expanded by 3.2% more. terms properties, all considered systems first dark excitation, consistently shifting energy with direct gap, while absorption onset does not vary significantly strain. Our findings suggest powerful tool for fine tuning TMDC heterostructures preserving fundamental characteristics, thus opening new avenues designing optoelectronic applications.

Язык: Английский

Tracking and controlling ultrafast charge and energy flow in graphene-semiconductor heterostructures DOI Creative Commons
Shuai Fu, Heng Zhang, Klaas‐Jan Tielrooij

и другие.

The Innovation, Год журнала: 2025, Номер 6(3), С. 100764 - 100764

Опубликована: Янв. 5, 2025

Low-dimensional materials have left a mark on modern science, creating new opportunities for next-generation optoelectronic applications. Integrating disparate nanoscale building blocks into heterostructures offers the possibility of combining advantageous features individual components and exploring properties arising from their interactions atomic-scale proximity. The sensitization graphene using semiconductors provides highly promising platform advancing applications through various hybrid systems. A critical aspect achieving superior performance lies in understanding controlling fate photogenerated charge carriers, including generation, transfer, separation, recombination. Here, we review recent advances carrier dynamics graphene-semiconductor by ultrafast laser spectroscopies. First, present comprehensive overview graphene-based state-of-the-art This is succeeded an introduction to theoretical frameworks that elucidate fundamental principles determinants influencing transfer energy transfer-two interfacial processes are vital both research device performance. We then outline efforts aimed at investigating charge/energy flow heterostructures, focusing illustrating trajectories, directions, mechanisms recombination processes. Subsequently, discuss effective control knobs allow fine-tuning these Finally, address challenges prospects further investigation this field.

Язык: Английский

Процитировано

2
Coupling of electronic transition to ferroelectric order in a 2D semiconductor DOI Creative Commons
Chun‐Ying Huang, Daniel G. Chica, Zhi‐Hao Cui

и другие.

Nature Communications, Год журнала: 2025, Номер 16(1)

Опубликована: Фев. 23, 2025

Язык: Английский

Процитировано

1
Opto-twistronic Hall effect in a three-dimensional spiral lattice DOI
Zhurun Ji, Yuzhou Zhao, Yicong Chen

и другие.

Nature, Год журнала: 2024, Номер unknown

Опубликована: Сен. 18, 2024

Язык: Английский

Процитировано

6
Spin-Polarized Charge Separation at Two-Dimensional Semiconductor/Molecule Interfaces DOI
Yufeng Liu, Taketo Handa, Nicholas Olsen

и другие.

Journal of the American Chemical Society, Год журнала: 2024, Номер 146(14), С. 10052 - 10059

Опубликована: Март 27, 2024

Spin-polarized electrons can improve the efficiency and selectivity of photo- electro-catalytic reactions, as demonstrated in past with magnetic or magnetized catalysts. Here, we present a scheme which spin-polarized charge separation occurs at interfaces nonmagnetic semiconductors molecular films absence field. We take advantage spin-valley-locked band structure valley-dependent optical selection rule group VI transition metal dichalcogenide (TMDC) monolayers to generate electron–hole pairs. Photoinduced electron transfer from WS2 fullerene (C60) hole MoSe2 phthalocyanine (H2Pc) are found result spin polarization lifetimes that 1 order magnitude longer than those TMDC alone. Our findings connect valleytronic properties interfacial suggest viable route toward spin-selective photocatalysis.

Язык: Английский

Процитировано

3
Electrically defined quantum dots for bosonic excitons DOI
Deepankur Thureja, F Yazici, T. Smoleński

и другие.

Physical review. B./Physical review. B, Год журнала: 2024, Номер 110(24)

Опубликована: Дек. 27, 2024

Процитировано

3
Hydrothermal Synthesis of Single‐Crystal Europium Tungstate Hydroxide Nanobelts for Enhanced Humidity Sensing DOI Open Access
Jusheng Bao, Haiying Yang, Weicheng Xie

и другие.

Chemistry - An Asian Journal, Год журнала: 2025, Номер unknown

Опубликована: Фев. 4, 2025

Humidity sensing is crucial for environmental monitoring and industrial processes; however, existing sensors often face challenges in sensitivity response time. This study addresses these by introducing a novel material, EuWO4(OH) nanobelts, synthesized through hydrothermal method. These nanobelts exhibit exceptional performance, with value of 2.3×103 at 85 % RH, rapid time 6.3 s, recovery 0.6 s. Unlike traditional materials, offer superior stability reproducibility, making them promising candidate advanced humidity sensors. The distinctive electronic properties high crystallinity contribute to their response, which sets apart from not only elucidates the potential but also provides new direction development next-generation

Язык: Английский

Процитировано

0
Nano-optical metrologies for characterizing the carrier dynamics in two-dimensional materials DOI
Soyeong Kwon, Peiwen Jiang, Calista Lum

и другие.

Materials Research Bulletin, Год журнала: 2025, Номер unknown, С. 113382 - 113382

Опубликована: Фев. 1, 2025

Язык: Английский

Процитировано

0
Towards field-resolved visible microscopy of 2D materials DOI Creative Commons
Daewon Kim,

Mikhail Mamaikin,

Ferenc Krausz

и другие.

Nanophotonics, Год журнала: 2025, Номер unknown

Опубликована: Март 6, 2025

Abstract The investigation of interaction light with various materials on the sub-cycle time scale requires field sampling techniques incredibly high temporal resolution. Electro-optic (EOS) provides sub-wavelength resolution both in and space giving opportunity for ultrafast microscopy to observe response electrons quasiparticles real time. For frequencies approaching petahertz scale, oscillations are hard resolve. In particular, EOS has not been demonstrated wavelengths below 700 nm. this perspective, we discuss potential extension cover complete visible spectrum impact that it can give nanophotonics material science. Specifically, describe how dynamics some 2D be tracked using space-resolved EOS.

Язык: Английский

Процитировано

0
Interface-Tailored Secondary Excitation and Ultrafast Charge/Energy Transfer in Ti3C2Tx-MoS2 Heterostructure Films DOI Creative Commons
Jiaxu Zhang, Rafael Muñoz‐Mármol, Shuai Fu

и другие.

Journal of the American Chemical Society, Год журнала: 2025, Номер unknown

Опубликована: Март 7, 2025

Charge/energy separation across interfaces of plasmonic materials is vital for minimizing losses and enhancing their performance in photochemical optoelectronic applications. While heterostructures combining two-dimensional transition metal carbides/nitrides (MXenes) semiconducting dichalcogenides (TMDs) hold significant potential, the mechanisms governing plasmon-induced carrier dynamics at these remain elusive. Here, we uncover a distinctive secondary excitation phenomenon an ultrafast charge/energy transfer process heterostructure films composed macro-scale Ti3C2Tx MoS2 films. Using Rayleigh–Bénard convection Marangoni effect-induced self-assembly, fabricate large-scale (square centimeters) edge-connected monolayer nanoflakes. These are flexibly stacked controlled sequence to form macroscopic heterostructures, enabling investigation manipulation excited-state using transient absorption optical pump-terahertz probe spectroscopy. In Ti3C2Tx-MoS2 heterostructure, observe driven by surface plasmon resonance Ti3C2Tx. This phenomenon, with characteristic rise time constant ∼70 ps, likely facilitated acoustic phonon recycling interface. Further interfacial thermal transport engineering─achieved tailoring combination trilayer heterostructures─allows extending ∼175 ps. Furthermore, identify sub-150 fs from MoS2. The efficiency strongly dependent on photon energy, resulting amplified photoconductivity up ∼180% under 3.10 eV excitation. insights crucial developing MXene-based paving way advancements

Язык: Английский

Процитировано

0
Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications DOI Open Access

H. Oh,

Younghyun You, Seung Yun Lee

и другие.

Small, Год журнала: 2025, Номер unknown

Опубликована: Март 19, 2025

Abstract Multilayer transition metal dichalcogenides (ML‐TMDs) with commensurate, incommensurate, and reconstructed structures, have emerged as a class of 2D materials unique properties that differ significantly from their monolayer counterparts. While previous research has focused on monolayers, the discovery various novel sparked interest in multilayers diverse structures engineered through stacking. These are characterized by interactions between layers exhibit remarkable tunability structural, optical, electronic behaviors depending stacking order, twist angle, interlayer coupling. This review provides an overview ML‐TMDs explores such band structure, optical responses, ferroelectricity, anomalous Hall effect. Various synthetic methods employed to fabricate ML‐TMDs, including mechanical chemical vapor deposition techniques, emphasis achieving precise control angles layer configurations, discussed. study further potential applications nanoelectronics, optoelectronics, quantum devices, where can be harnessed for next‐generation technologies. The critical role played these development future devices is highlighted.

Язык: Английский

Процитировано

0