Interfacial Engineering of Degenerately Doped V0.25Mo0.75S2 for Improved Contacts in MoS2 Field Effect Transistors DOI Creative Commons

Dipak Maity,

Rajesh Kumar Yadav, Adi Levi

и другие.

Small Methods, Год журнала: 2024, Номер unknown

Опубликована: Дек. 29, 2024

Abstract 2D transition‐metal dichalcogenide semiconductors such as MoS 2 are identified a platform for next‐generation electronic circuitries. However, the progress toward industrial applications is still lagging due to imperfections of wafer‐scale deposition techniques and in‐contact parasitic impedance affecting device integration in large circuits systems. Here, on contact engineering large‐scale, chemical vapor (CVD) grown monolayer films reported, leading improved performance field effect transistors. The transistor pure initially characterized by its I ON / OFF ratio (10 6 ), carrier density (≈10 12 cm −2 mobility Vs −1 Schottky barrier height (SBH) conventional metallic Au (≈215 meV). Then, CVD‐grown degenerately‐doped alloy V 0.25 Mo 0.75 S introduced between modified transistor, reducing SBH ≈100 meV. reduced resistance (≈50%) with an atomically thin interface complies theoretical model free from Fermi‐level pinning effects. It resilient high temperatures that characteristic physical metallization methods readily scalable.

Язык: Английский

Miniaturized spectral sensing with a tunable optoelectronic interface DOI Creative Commons
Xiaoqi Cui, Fedor Nigmatulin,

Lei Wang

и другие.

Science Advances, Год журнала: 2025, Номер 11(4)

Опубликована: Янв. 22, 2025

Reconstructive optoelectronic spectroscopy has generated substantial interest in the miniaturization of traditional spectroscopic tools, such as spectrometers. However, most state-of-the-art demonstrations face fundamental limits rank deficiency photoresponse matrix. In this work, we demonstrate a miniaturized spectral sensing system using an electrically tunable compact interface, which generates distinguishable photoresponses from various input spectra, enabling accurate identification with device footprint 5 micrometers by micrometers. We report narrow-band peak accuracies ∼0.19 nanometers free space and ∼2.45 on-chip. addition, implement broadband complex for material identification, applicable to organic dyes, metals, semiconductors, dielectrics. This work advances high-performance, optical both free-space on-chip applications, offering cost-effective solutions, broad applicability, scalable manufacturing.

Язык: Английский

Процитировано

1
Broadband InSe/MoS2 Type-II Heterojunction Photodetector with Gate-Tunable Polarity Induced Near-Linear Wavelength-Dependent Photocurrent Peak DOI

Wenying Zhang,

Kuan-Hao Chiao,

Hsin-Wen Huang

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2025, Номер unknown

Опубликована: Фев. 18, 2025

Selectable polarity in van der Waals materials not only broadens the scope of design for electronic components but also opens new avenues development advanced electronic, optoelectronic, and sensor devices. In this study, we fabricated vertically stacked InSe/MoS2 type-II heterojunction photodetectors conducted a systematic investigation their photoelectrical properties. Our findings demonstrate high performance these photodetectors, characterized by effective suppression charge recombination, presence both positive negative photoconductivity under different incident light excitations, broad-spectrum detection ranging from 400 to 1064 nm, remarkable responsivity photodetectivity values 10,200 A/W (−1430 A/W) 3 × 1013 cm Hz–1/2 W–1 (3.6 1011 W–1) at 532 nm (1064 nm), respectively. Additionally, exhibit gate-tunable transition gate voltage −20 V, leading photocurrent peak, position which shows near-linear dependence on wavelength. By applying external voltages, heterojunctions can flexibly switch between functions such as photodetection, modulation, storage applications, providing integrated circuits multifunctional Through Poisson drift-diffusion simulations, attribute observed photoresponse electrons excited InSe valence band MoS2 conduction subsequently trapped interface. The peak arises carrier accumulation interface, with its determined interplay hole density electron MoS2. results present promising opportunity compact spectrometers based photodetectors.

Язык: Английский

Процитировано

0
Progress in 2D Material‐Based Infrared Photodetectors for Intelligent Vision Applications DOI
Pengyu Zhang, Yinghui Sun, Jiacheng Sun

и другие.

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Апрель 14, 2025

Abstract Infrared (IR) photodetectors based on narrow‐bandgap 2D materials and heterojunctions have shown great promise in constructing IR sensing systems, including optical communication, security monitoring, thermal imaging, astronomy exploration. In recent years, significant progress has been made developing performance enhancement strategies for material‐based integrating them with artificial neural networks, paving the way sophisticated intelligent applications. This review offers a detailed overview of advancements enhancing photodetection capabilities fostering related First, concise underlying mechanisms key metrics designed operation region is illustrated. Next, sensitivity light absorption photodetectors, defect engineering, heterostructure construction, field enhancement, are discussed. Then, advances applications summarized, particular focus innovations that enable intelligent, real‐time processing Finally, highlights challenges provides forward‐looking perspective development advanced photodetectors.

Язык: Английский

Процитировано

0
Polarization‐Sensitive Momentum‐Matching Interlayer Excitons for Infrared Photodetection DOI Open Access

Zelin Che,

Wenjie Deng, Jingzhen Li

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 5, 2024

Abstract 2D materials hold potential for developing low‐cost, high‐performance broadband polarized infrared photodetectors. However, the development of photodetectors is largely constrained by fixed bandgap spectral (cutoff wavelength) limitations available semiconductors. Here, an approach presented that leverages anisotropic interlayer excitons (IEXs) within a type‐II van der Waals heterojunction, achieving polarization photoresponse beyond intrinsic limits its constituent By constructing heterojunctions using CrPS 4 and ReS 2 , unique band alignment, enabling strong optical excitation achieved through sub‐bandgap, which lower than bandgaps both . The heterojunction exhibits responsivity 0.3 A W −1 ratio 1.3 at incident photon energy 0.8 eV, comparable to naturally with bandgaps. Additionally, IEXs demonstrated dual‐band detection introducing /CrPS /MoS distinct inte rlayer sub‐bandgaps. This flexible design offers new platform multi‐dimensional sensing on‐chip optoelectronic applications.

Язык: Английский

Процитировано

2
Flexible and impact-resistant antimony selenide photodetectors enabled by pulsed-laser deposition and their application in imaging beyond human vision DOI
Yuhang Ma,

Huanrong Liang,

Xinyi Guan

и другие.

Journal of Material Science and Technology, Год журнала: 2024, Номер unknown

Опубликована: Дек. 1, 2024

Язык: Английский

Процитировано

2
Interfacial Engineering of Degenerately Doped V0.25Mo0.75S2 for Improved Contacts in MoS2 Field Effect Transistors DOI Creative Commons

Dipak Maity,

Rajesh Kumar Yadav, Adi Levi

и другие.

Small Methods, Год журнала: 2024, Номер unknown

Опубликована: Дек. 29, 2024

Abstract 2D transition‐metal dichalcogenide semiconductors such as MoS 2 are identified a platform for next‐generation electronic circuitries. However, the progress toward industrial applications is still lagging due to imperfections of wafer‐scale deposition techniques and in‐contact parasitic impedance affecting device integration in large circuits systems. Here, on contact engineering large‐scale, chemical vapor (CVD) grown monolayer films reported, leading improved performance field effect transistors. The transistor pure initially characterized by its I ON / OFF ratio (10 6 ), carrier density (≈10 12 cm −2 mobility Vs −1 Schottky barrier height (SBH) conventional metallic Au (≈215 meV). Then, CVD‐grown degenerately‐doped alloy V 0.25 Mo 0.75 S introduced between modified transistor, reducing SBH ≈100 meV. reduced resistance (≈50%) with an atomically thin interface complies theoretical model free from Fermi‐level pinning effects. It resilient high temperatures that characteristic physical metallization methods readily scalable.

Язык: Английский

Процитировано

0