Miniaturized spectral sensing with a tunable optoelectronic interface
Science Advances,
Год журнала:
2025,
Номер
11(4)
Опубликована: Янв. 22, 2025
Reconstructive
optoelectronic
spectroscopy
has
generated
substantial
interest
in
the
miniaturization
of
traditional
spectroscopic
tools,
such
as
spectrometers.
However,
most
state-of-the-art
demonstrations
face
fundamental
limits
rank
deficiency
photoresponse
matrix.
In
this
work,
we
demonstrate
a
miniaturized
spectral
sensing
system
using
an
electrically
tunable
compact
interface,
which
generates
distinguishable
photoresponses
from
various
input
spectra,
enabling
accurate
identification
with
device
footprint
5
micrometers
by
micrometers.
We
report
narrow-band
peak
accuracies
∼0.19
nanometers
free
space
and
∼2.45
on-chip.
addition,
implement
broadband
complex
for
material
identification,
applicable
to
organic
dyes,
metals,
semiconductors,
dielectrics.
This
work
advances
high-performance,
optical
both
free-space
on-chip
applications,
offering
cost-effective
solutions,
broad
applicability,
scalable
manufacturing.
Язык: Английский
Broadband InSe/MoS2 Type-II Heterojunction Photodetector with Gate-Tunable Polarity Induced Near-Linear Wavelength-Dependent Photocurrent Peak
Wenying Zhang,
Kuan-Hao Chiao,
Hsin-Wen Huang
и другие.
ACS Applied Materials & Interfaces,
Год журнала:
2025,
Номер
unknown
Опубликована: Фев. 18, 2025
Selectable
polarity
in
van
der
Waals
materials
not
only
broadens
the
scope
of
design
for
electronic
components
but
also
opens
new
avenues
development
advanced
electronic,
optoelectronic,
and
sensor
devices.
In
this
study,
we
fabricated
vertically
stacked
InSe/MoS2
type-II
heterojunction
photodetectors
conducted
a
systematic
investigation
their
photoelectrical
properties.
Our
findings
demonstrate
high
performance
these
photodetectors,
characterized
by
effective
suppression
charge
recombination,
presence
both
positive
negative
photoconductivity
under
different
incident
light
excitations,
broad-spectrum
detection
ranging
from
400
to
1064
nm,
remarkable
responsivity
photodetectivity
values
10,200
A/W
(−1430
A/W)
3
×
1013
cm
Hz–1/2
W–1
(3.6
1011
W–1)
at
532
nm
(1064
nm),
respectively.
Additionally,
exhibit
gate-tunable
transition
gate
voltage
−20
V,
leading
photocurrent
peak,
position
which
shows
near-linear
dependence
on
wavelength.
By
applying
external
voltages,
heterojunctions
can
flexibly
switch
between
functions
such
as
photodetection,
modulation,
storage
applications,
providing
integrated
circuits
multifunctional
Through
Poisson
drift-diffusion
simulations,
attribute
observed
photoresponse
electrons
excited
InSe
valence
band
MoS2
conduction
subsequently
trapped
interface.
The
peak
arises
carrier
accumulation
interface,
with
its
determined
interplay
hole
density
electron
MoS2.
results
present
promising
opportunity
compact
spectrometers
based
photodetectors.
Язык: Английский
Progress in 2D Material‐Based Infrared Photodetectors for Intelligent Vision Applications
Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Апрель 14, 2025
Abstract
Infrared
(IR)
photodetectors
based
on
narrow‐bandgap
2D
materials
and
heterojunctions
have
shown
great
promise
in
constructing
IR
sensing
systems,
including
optical
communication,
security
monitoring,
thermal
imaging,
astronomy
exploration.
In
recent
years,
significant
progress
has
been
made
developing
performance
enhancement
strategies
for
material‐based
integrating
them
with
artificial
neural
networks,
paving
the
way
sophisticated
intelligent
applications.
This
review
offers
a
detailed
overview
of
advancements
enhancing
photodetection
capabilities
fostering
related
First,
concise
underlying
mechanisms
key
metrics
designed
operation
region
is
illustrated.
Next,
sensitivity
light
absorption
photodetectors,
defect
engineering,
heterostructure
construction,
field
enhancement,
are
discussed.
Then,
advances
applications
summarized,
particular
focus
innovations
that
enable
intelligent,
real‐time
processing
Finally,
highlights
challenges
provides
forward‐looking
perspective
development
advanced
photodetectors.
Язык: Английский
Polarization‐Sensitive Momentum‐Matching Interlayer Excitons for Infrared Photodetection
Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Ноя. 5, 2024
Abstract
2D
materials
hold
potential
for
developing
low‐cost,
high‐performance
broadband
polarized
infrared
photodetectors.
However,
the
development
of
photodetectors
is
largely
constrained
by
fixed
bandgap
spectral
(cutoff
wavelength)
limitations
available
semiconductors.
Here,
an
approach
presented
that
leverages
anisotropic
interlayer
excitons
(IEXs)
within
a
type‐II
van
der
Waals
heterojunction,
achieving
polarization
photoresponse
beyond
intrinsic
limits
its
constituent
By
constructing
heterojunctions
using
CrPS
4
and
ReS
2
,
unique
band
alignment,
enabling
strong
optical
excitation
achieved
through
sub‐bandgap,
which
lower
than
bandgaps
both
.
The
heterojunction
exhibits
responsivity
0.3
A
W
−1
ratio
1.3
at
incident
photon
energy
0.8
eV,
comparable
to
naturally
with
bandgaps.
Additionally,
IEXs
demonstrated
dual‐band
detection
introducing
/CrPS
/MoS
distinct
inte
rlayer
sub‐bandgaps.
This
flexible
design
offers
new
platform
multi‐dimensional
sensing
on‐chip
optoelectronic
applications.
Язык: Английский
Flexible and impact-resistant antimony selenide photodetectors enabled by pulsed-laser deposition and their application in imaging beyond human vision
Journal of Material Science and Technology,
Год журнала:
2024,
Номер
unknown
Опубликована: Дек. 1, 2024
Язык: Английский
Interfacial Engineering of Degenerately Doped V0.25Mo0.75S2 for Improved Contacts in MoS2 Field Effect Transistors
Small Methods,
Год журнала:
2024,
Номер
unknown
Опубликована: Дек. 29, 2024
Abstract
2D
transition‐metal
dichalcogenide
semiconductors
such
as
MoS
2
are
identified
a
platform
for
next‐generation
electronic
circuitries.
However,
the
progress
toward
industrial
applications
is
still
lagging
due
to
imperfections
of
wafer‐scale
deposition
techniques
and
in‐contact
parasitic
impedance
affecting
device
integration
in
large
circuits
systems.
Here,
on
contact
engineering
large‐scale,
chemical
vapor
(CVD)
grown
monolayer
films
reported,
leading
improved
performance
field
effect
transistors.
The
transistor
pure
initially
characterized
by
its
I
ON
/
OFF
ratio
(10
6
),
carrier
density
(≈10
12
cm
−2
mobility
Vs
−1
Schottky
barrier
height
(SBH)
conventional
metallic
Au
(≈215
meV).
Then,
CVD‐grown
degenerately‐doped
alloy
V
0.25
Mo
0.75
S
introduced
between
modified
transistor,
reducing
SBH
≈100
meV.
reduced
resistance
(≈50%)
with
an
atomically
thin
interface
complies
theoretical
model
free
from
Fermi‐level
pinning
effects.
It
resilient
high
temperatures
that
characteristic
physical
metallization
methods
readily
scalable.
Язык: Английский