Optically Gated Electrostatic Field-Effect Thermal Transistor DOI
Shouyuan Huang, Neil Ghosh, Chang Niu

и другие.

Nano Letters, Год журнала: 2024, Номер 24(17), С. 5139 - 5145

Опубликована: Апрель 19, 2024

Dynamic tuning of thermal transport in solids is scientifically intriguing with wide applications for control electronic devices. In this work, we demonstrate a transistor, device which heat flow can be regulated using external control, realized topological insulator (TI) through the surface states. The achieved by optical gating thin dielectric layer deposited on TI film. gate-dependent conductivity measured micro-Raman thermometry. transistor has large ON/OFF ratio 2.8 at room temperature and continuously repetitively switched tens seconds potentially much faster electrical gating. Such transistors fast switching times offer possibilities smart devices active management future systems.

Язык: Английский

Moiré Pattern Controlled Phonon Polarizer Based on Twisted Graphene DOI Creative Commons
Zihao Qin,

Lingyun Dai,

Man Li

и другие.

Advanced Materials, Год журнала: 2024, Номер 36(24)

Опубликована: Март 2, 2024

Twisted van der Waals materials featuring Moiré patterns present new design possibilities and demonstrate unconventional behaviors in electrical, optical, spintronic, superconducting properties. However, experimental exploration of thermal transport across has not been as extensive, despite its critical role nanoelectronics, management, energy technologies. Here, the first study is conducted on twisted graphene, demonstrating a phonon polarizer concept from rotational misalignment between stacked layers. The direct acoustic measurements, structural characterizations, atomistic modeling, reveal modulation up to 631% conductance with various angles, while maintaining high transmission. By comparing experiments density functional theory molecular dynamics simulations, mode-dependent transmissions are quantified based angle alignment graphene band structures attributed coupling among flexural modes. agreement confirms dominant tuning mechanisms adjusting transmission high-frequency modes having negligible effects low-frequency near Brillouin zone center. This offers crucial insights into fundamental structures, opening avenues for invention quantum devices methodologies manipulations vibrational spectra.

Язык: Английский

Процитировано

5

From Molecular Electronics to Molecular Intelligence DOI

Chenshuai Yan,

Chao Fang, Jinyu Gan

и другие.

ACS Nano, Год журнала: 2024, Номер 18(42), С. 28531 - 28556

Опубликована: Окт. 12, 2024

Molecular electronics is a field that explores the ultimate limits of electronic device dimensions by using individual molecules as operable devices. Over past five decades since proposal molecular rectifier Aviram and Ratner in 1974 ( Chem. Phys. Lett.1974,29, 277−283), researchers have developed various fabrication characterization techniques to explore electrical properties molecules. With push characterizations data analysis methodologies, reproducibility issues single-molecule conductance measurement been chiefly resolved, origins variation among different devices investigated. Numerous prototypical with external physical chemical stimuli demonstrated based on advances instrumental methodological developments. These enable functions such switching, logic computing, synaptic-like computing. However, goal electronics, how can molecular-based intelligence be achieved through devices? At fiftieth anniversary we try answer this question summarizing recent progress providing an outlook electronics. First, review methodologies for junctions, which provide foundation Second, preliminary efforts toward integration circuits are discussed future potential intelligent applications. Third, some sensing applications introduced, demonstrating phenomena at scale beyond conventional macroscopic From perspective, summarize current challenges prospects describing concepts "AI electronics" "single-molecule AI".

Язык: Английский

Процитировано

5

Solid‐State Electrochemical Thermal Switches with Large Thermal Conductivity Switching Widths DOI Creative Commons
Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong

и другие.

Advanced Science, Год журнала: 2024, Номер 11(32)

Опубликована: Июнь 25, 2024

Abstract Thermal switches that switch the thermal conductivity ( κ ) of active layers are attracting increasing attention as management devices. For electrochemical switches, several transition metal oxides (TMOs) proposed layers. After redox treatment, crystal structure TMO is modulated, which results in switching. However, switching width still small (<4 W m −1 K ). In this study, it demonstrates LaNiO x ‐based solid‐state have a 4.3 . Fully oxidized 3 (on state) has 6.0 due to large contribution electron ele , 3.1 contrast, reduced 2.72 (off 1.7 because phonons scattered by oxygen vacancies. The cyclable and crystalline lattice This may be promising platform for next‐generation devices such displays.

Язык: Английский

Процитировано

4

Densifying Conduction Networks of Vertically Aligned Carbon Fiber Arrays with Secondary Graphene Networks for Highly Thermally Conductive Polymer Composites DOI Open Access
Xiao‐Hang Lu, Ji Liu,

Chao Shu

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 8, 2024

Abstract Thermally conductive polymer composites hold great potential for thermal management applications in the electronics industry, but achieving metal‐like conductivity (>200 W m −1 K ) remains challenging due to inevitable phonon scattering and resistance at filler‐filler filler‐matrix interfaces. Herein, an efficient approach is presented overcome this long‐standing barrier by designing a densified interconnecting filler framework, featuring macro‐level carbon fiber (CF) array welded with high‐quality, self‐assembled graphene network. In vertically aligned continuous CFs function as primary through‐plane conduction paths, minimizing resistance. Meanwhile, secondary network interconnects into more integrated framework while introducing supplementary paths. Following backfilling, resulting epoxy nanocomposite exhibits unprecedented of 262 loading 23.3 vol%, establishing new benchmark among thermally conducting composites. When employed interface material, composite offers 68.2% enhancement cooling efficiency compared standard commercial counterparts. Furthermore, functional presents excellent Joule heating interfacial adhesion properties, making it promising healing multifunctional complex environments.

Язык: Английский

Процитировано

4

Thermal switching performance of surface plasmon polaritons in Ag2Se quantum-Dot/Polymer composite film DOI
Congliang Huang,

Changkang Du,

Yan-Ru Yang

и другие.

International Journal of Heat and Mass Transfer, Год журнала: 2025, Номер 244, С. 126943 - 126943

Опубликована: Март 13, 2025

Язык: Английский

Процитировано

0

Couple-close construction of non-classical boron cluster-phosphonium conjugates DOI Creative Commons

Zhaofeng Sun,

Jibo Zong,

Hongyuan Ren

и другие.

Nature Communications, Год журнала: 2024, Номер 15(1)

Опубликована: Сен. 11, 2024

Язык: Английский

Процитировано

3

Effects of GaN substrates of different polarity on the thermal and electronic properties of monolayer MoS2 DOI

Qiaoxi Yu,

Tao Feng, Xiaoliang Zhang

и другие.

Physical Chemistry Chemical Physics, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Monolayer MoS

Язык: Английский

Процитировано

0

Five-membered heterocycles as promising platforms for molecular logic gate construction DOI Creative Commons
Alexander Ciupa

RSC Advances, Год журнала: 2025, Номер 15(14), С. 10565 - 10572

Опубликована: Янв. 1, 2025

The field of molecular logic gates began thirty years ago with the early pioneers de Silva et al. laying foundation for modern molecular-scale switches and devices.

Язык: Английский

Процитировано

0

Boosting high‐temperature heat transfer of ceramic insulation tile with ordered‐conformation boron nitride DOI
Baoxi Zhang,

Zhanxiang Zhang,

Shenglong Rui

и другие.

Journal of the American Ceramic Society, Год журнала: 2025, Номер unknown

Опубликована: Апрель 12, 2025

Abstract Boosting heat transfer of ceramics has been an increasing challenge for spacecraft insulation tile. The concurrent superiorities higher stability and comparative thermal conductivity on par with graphene make boron nitride (h‐BN) ideal reinforcement. Yet, its characteristic Kapitza resistance inevitably aggravates deterioration in aerodynamic in‐service environment. Here, we proposed a multiscale optimal approach to boost the Al 2 O 3 /h‐BN composites nanoscale interfacial conductance mesoscale h‐BN ordered conformation. Interfacial induced by strong 5% Al‐N bonding configuration densification process is improved from 248 MW·m −2 ·K −1 at 300 K 340 1500 K, which depicts priority than composites. Massive delocalized lower‐frequency phonons, indicator flutter, are decomposed localized high‐frequency phonon high temperature. Mesoscale increased 15 W·m random distribution 19 conformation K. This design external field fabrication constructs rapid path anisotropic converge, ameliorates dispersion. work provides effective strategy designing novel ceramic tile extend remaining life next‐generation spacecraft.

Язык: Английский

Процитировано

0

Machine learning for thermal transport and phonon high-order anharmonicity in high thermal conductivity materials: A case study in boron arsenide DOI

Lingyun Dai,

Man Li, Yongjie Hu

и другие.

Physical Review Materials, Год журнала: 2025, Номер 9(4)

Опубликована: Апрель 25, 2025

Язык: Английский

Процитировано

0