Nano Letters,
Год журнала:
2024,
Номер
24(17), С. 5139 - 5145
Опубликована: Апрель 19, 2024
Dynamic
tuning
of
thermal
transport
in
solids
is
scientifically
intriguing
with
wide
applications
for
control
electronic
devices.
In
this
work,
we
demonstrate
a
transistor,
device
which
heat
flow
can
be
regulated
using
external
control,
realized
topological
insulator
(TI)
through
the
surface
states.
The
achieved
by
optical
gating
thin
dielectric
layer
deposited
on
TI
film.
gate-dependent
conductivity
measured
micro-Raman
thermometry.
transistor
has
large
ON/OFF
ratio
2.8
at
room
temperature
and
continuously
repetitively
switched
tens
seconds
potentially
much
faster
electrical
gating.
Such
transistors
fast
switching
times
offer
possibilities
smart
devices
active
management
future
systems.
ACS Applied Materials & Interfaces,
Год журнала:
2024,
Номер
16(12), С. 15043 - 15049
Опубликована: Март 13, 2024
The
operation
of
oxide-based
memristive
devices
relies
on
the
fast
accumulation
and
depletion
oxygen
vacancies
by
an
electric
field
close
to
metal–oxide
interface.
Here,
we
show
that
reversible
change
local
concentration
at
this
interface
also
produces
a
in
thermal
boundary
resistance
(TBR),
i.e.,
resistive
switching
effect.
We
used
frequency
domain
thermoreflectance
monitor
interfacial
TBR
(Pt,Cr)/SrTiO3
devices,
showing
≈20%
under
usual
SET/RESET
voltages,
depending
structure
device.
Time-dependent
relaxation
experiments
suggest
ionic
rearrangement
along
whole
area
metal/oxide
interface,
apart
from
filament
responsible
for
electrical
conductivity
switching.
presented
work
provide
valuable
knowledge
about
oxide
ion
dynamics
redox-based
devices.
Physical review. B./Physical review. B,
Год журнала:
2024,
Номер
109(18)
Опубликована: Май 6, 2024
Thermal
switching
materials,
whose
thermal
conductivity
can
be
controlled
externally,
show
great
potential
in
contemporary
management.
The
manipulation
of
transport
properties
through
magnetic
fields
has
been
accomplished
materials
that
exhibit
a
high
magnetoresistance.
However,
it
is
generally
understood
the
lattice
attributed
to
phonons
not
significantly
impacted
by
fields.
In
this
study,
we
experimentally
demonstrate
significant
impact
phonon-magnon
scattering
on
rare-earth
metal
gadolinium
near
room
temperature,
which
field
realize
switching.
Using
first-principles
dynamics
and
spin-lattice
simulations,
attribute
observed
change
phononic
field-suppressed
scattering.
This
research
suggests
ferromagnetic
crucial
determine
their
conductivity,
opening
door
innovative
magnetic-field-controlled
materials.
Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Июль 20, 2024
Abstract
Growing
technical
demand
for
thermal
management
stems
from
the
pursuit
of
high–efficient
energy
utilization
and
reuse
wasted
energy,
which
necessitates
manipulation
heat
flow
with
electronic
analogs
to
improve
device
performance.
Here,
recent
experimental
progress
is
reviewed
switching
materials,
aiming
achieve
all–solid–state
switches,
are
an
enabling
technology
solid–state
circuits.
Moreover,
current
understanding
discovering
materials
reshaped
aspect
conduction
mechanisms
under
external
controls.
Furthermore,
challenges
future
perspectives
provided
highlight
new
emerging
directions
discovery
in
this
continuously
evolving
field.
Nano Letters,
Год журнала:
2024,
Номер
24(17), С. 5139 - 5145
Опубликована: Апрель 19, 2024
Dynamic
tuning
of
thermal
transport
in
solids
is
scientifically
intriguing
with
wide
applications
for
control
electronic
devices.
In
this
work,
we
demonstrate
a
transistor,
device
which
heat
flow
can
be
regulated
using
external
control,
realized
topological
insulator
(TI)
through
the
surface
states.
The
achieved
by
optical
gating
thin
dielectric
layer
deposited
on
TI
film.
gate-dependent
conductivity
measured
micro-Raman
thermometry.
transistor
has
large
ON/OFF
ratio
2.8
at
room
temperature
and
continuously
repetitively
switched
tens
seconds
potentially
much
faster
electrical
gating.
Such
transistors
fast
switching
times
offer
possibilities
smart
devices
active
management
future
systems.
