Prediction of Ruddlesden–Popper Antiperovskites K₄OBr₂ and K₄OI₂ for Potential Thermoelectric Application

The Journal of Physical Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Фев. 24, 2025

Язык: Английский

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Wearable Biodevices Based on Two-Dimensional Materials: From Flexible Sensors to Smart Integrated Systems

Nano-Micro Letters, Год журнала: 2025, Номер 17(1)

Опубликована: Янв. 15, 2025

Abstract The proliferation of wearable biodevices has boosted the development soft, innovative, and multifunctional materials for human health monitoring. integration sensors with intelligent systems is an overwhelming tendency, providing powerful tools remote monitoring personal management. Among many candidates, two-dimensional (2D) stand out due to several exotic mechanical, electrical, optical, chemical properties that can be efficiently integrated into atomic-thin films. While previous reviews on 2D primarily focus conventional configurations like graphene, rapid new opened up novel applications, particularly in smart interaction functionalities. This review aims consolidate recent progress, highlight unique advantages materials, guide future research by discussing existing challenges opportunities applying biodevices. We begin in-depth analysis advantages, sensing mechanisms, potential applications biodevice fabrication. Following this, we systematically discuss state-of-the-art based various physiological signals within body. Special attention given showcasing multi-functionality devices, mainly including self-power supply, diagnosis/treatment, human–machine interaction. Finally, concludes a concise summary prospective solutions concerning utilization advanced

Язык: Английский

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Advances and Challenges in SnTe‐Based Thermoelectrics

Advanced Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 31, 2025

Abstract SnTe‐based thermoelectric materials have attracted significant attention for their exceptional performance in mid‐to‐high temperature ranges, positioning them as promising candidates power generation. However, efficiency is constrained by challenges related to electronic structure, defect chemistry, and phonon behavior. This review comprehensively summarizes advancements SnTe devices over the past five years, focusing on strategies address these limitations. Key approaches include regulation, carrier transport optimization, engineering enhance electrical conductivity, reduce thermal improve overall conversion efficiency. The highlights breakthroughs fabrication methods, doping alloying, composite designs, development of novel nanostructures, with particular emphasis 2D such monolayers, bilayers, thin films, which offer new opportunities enhancement. Additionally, it provides an overview devices, covering techniques, stability, flexible device development. Despite progress, remain developing n‐type materials, optimizing interfaces, ensuring long‐term maximizing fills gaps existing literature offers valuable insights guidance future research aimed at improving properties, advancing integration, driving commercial viability practical applications.

Язык: Английский

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Lattice Plainification and Intercalation Advances Power Generation and Thermoelectric Cooling in n‐type Bi₂(Te, Se)₃

Advanced Energy Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 2, 2025

Abstract Bismuth telluride (Bi 2 Te 3 ) has been the only commercialized material in thermoelectric cooling and waste heat recovery. However, inferior performance for n‐type Bi (Te, Se) largely restricts practical applications. In this study, additional Ag atoms are introduced utilizing lattice plainification strategy to enhance electrical performance. Observations indicate that situate van der Waals layers, acting as dopants increase carrier concentration, bonding with adjacent intercalating form electron transport channels, while also suppressing formation of vacancies boost mobility, substantially favoring transport. Consequently, 2.79 Se 0.21 I 0.004 +0.3%Ag achieves an excellent room‐temperature ZT ≈1.1, Te2 .79 + 0.4%Ag demonstrates a higher average ≈1.1 at 300–523 K. Furthermore, full‐scale cooler using optimized combined commercial p‐type 0.5 Sb 1.5 achieved maximum temperature difference (Δ T max ≈68.3 K 300 larger Δ ≈84.8 343 Additionally, 0.4%Ag/Bi ‐based power generator realizes conversion efficiency ≈6.0% under ≈240 These results outperform devices, illustrating effectiveness thermoelectrics.

Язык: Английский

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Crystal symmetry modification enables high-ranged in-plane thermoelectric performance in n-type SnSe crystals

Nature Communications, Год журнала: 2025, Номер 16(1)

Опубликована: Фев. 20, 2025

SnSe crystal has witnessed significant advancements as a promising thermoelectric material over the past decade. Its in-plane direction shows robust mechanical strength for practical applications. Herein, we optimize performance of n-type by symmetry modification. In particular, find that Te and Mo alloying continuously enhances symmetry, thereby increasing carrier mobility to ~ 422 cm2 V-1 s-1. Simultaneously, conduction bands converge with modification, further improving electrical transport. Additionally, lattice thermal conductivity is limited 1.1 W m-1 K-1 due softness both acoustic optical branches. Consequently, achieve power factor 28 μW cm-1 K-2 ZT 0.6 in at 300 K. The average reaches 0.89 300-723 single-leg device based on obtained remarkable efficiency 5.3% under ΔT K, which highest reported SnSe. This work demonstrates substantial potential applications generation waste heat recovery.

Язык: Английский

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Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 11, 2025

Abstract Rhombohedral GeSe has attracted extensive attention due to its facile fabrication, low toxicity, and greater affordability compared with popular GeTe‐based thermoelectrics. However, thermoelectric properties require further optimization for practical applications. Here, a peak figure‐of‐merit of 1.31 at 623 K is reported p‐type polycrystalline (GeSe) 0.9 (AgBiTe 2 ) 0.1 ‐1.5 mol.% SnSe, ranking among the highest values. AgBiTe alloying induces phase transition in from orthorhombic rhombohedral while compositing which known thermal conductivity, establishes interfaces strong phonon scattering weak electron scattering. This strategy effectively suppresses transport maintaining exceptional electrical properties. Structural analyses reveal that multiscale defects, including intensive point defects (Ag Ge , Bi Te Se ), linear (dislocation arrays), planar (grain boundaries boundaries), volume (SnSe Ag phases), result an ultra‐low lattice conductivity 0.26 W m −1 K, approaching amorphous limit. Density functional theory calculations nanostructure characterizations indicate bonding between SnSe matrix, coupled minimal electronegativity difference Sn Ge, minimizes carrier sustains high performance.

Язык: Английский

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Improving the thermoelectric properties of septuple atomic-layer SnBi2Se4 by regulating the carrier concentration through Nb doping

Applied Physics Letters, Год журнала: 2025, Номер 126(2)

Опубликована: Янв. 13, 2025

Layered semiconductor materials have garnered significant attention in the thermoelectric field due to their excellent electrical property and intrinsically low lattice thermal conductivity. The septuple atomic-layered ternary compound SnBi2Se4 is reported as a promising material both bulk single-layer structures based on theoretical calculations, though experimental investigation remains unexplored. In this work, melting hot-press sintering methods were adopted synthesize SnBi2Se4. Its unique layered crystal structure contributed anisotropic transport properties reduced However, its performance constrained by carrier concentration that limits To solve issue, high-valent transition metal Nb was doped at Bi site provide additional electrons. This doping resulted noticeable improvement of increased conductivity decreased Finally, peak ZT ∼ 0.17 obtained for SnBi1.97Nb0.03Se4 723 K, suggesting effectiveness enhancing performance. These results indicate highly material, further improvements are needed.

Язык: Английский

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Screening of Promising Thermoelectric Materials from MnTe-GeTe Alloying

Materials Today Physics, Год журнала: 2025, Номер unknown, С. 101661 - 101661

Опубликована: Янв. 1, 2025

Язык: Английский

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Incorporating graphene quantum dots boosts thermoelectric performance of PEDOT:PSS films

Chemical Engineering Journal, Год журнала: 2025, Номер unknown, С. 160219 - 160219

Опубликована: Фев. 1, 2025

Язык: Английский

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Advanced GeTe‐Based Thermoelectrics: Charting the Path from Performance Optimization to Devices

Advanced Materials, Год журнала: 2025, Номер unknown

Опубликована: Апрель 9, 2025

Abstract Thermoelectric (TE) materials can interconvert electricity into heat, rendering them versatile for refrigeration and power generation. GeTe as a distinguished TE material has attracted considerable focus owing to its excellent performance. Herein, the milestones of research progress on are reviewed. The intrinsic potentials elaborated, mainly focusing crystal structure, band structure microstructures. path GeTe‐based thermoelectrics from performance optimization devices is attempted chart, referring shortcomings characteristics. Primarily, synthesis process implemented inhibit generation Ge precipitates phonon migration. Furthermore, thermoelectric enhanced through features, including phase transition, multiple valence bands, various microstructures via doping alloying. Subsequently, advancements presented aspect device integration. Eventually, prospect challenges future direction proposed, offering roadmap inject vitality further developments.

Язык: Английский

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