Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices DOI Creative Commons
Partha P. Banerjee, Aritra Acharyya, Rajib Das

и другие.

IEEE Access, Год журнала: 2024, Номер 12, С. 123656 - 123677

Опубликована: Янв. 1, 2024

The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN two-dimensional gas (2-DEG). Utilizing nanostrip patch type planar coupling circuit, mutual injection locking between adjacent elements is achieved. provides comprehensive analysis integrated power combining technique in HEM-ATT oscillator. A ten-element combined designed for operation at 1.0 THz, and simulation studies are conducted to examine its DC, large-signal, noise characteristics. capability generating narrow-band wave verified by introducing various levels structural mismatches elements. Results indicate that oscillator can deliver 2.27 W peak with 17% DC THz conversion efficiency THz. average measure found be 12.54 dB. Additionally, compared other state-of-the-art sources evaluate potentiality as an excellent radiator.

Язык: Английский

Low-Frequency Properties of a Silicon-Based Plasmonic Detector of Electromagnetic Radiation DOI
A. V. Shchepetilnikov, А. Р. Хисамеева, Ya. V. Fedotova

и другие.

Bulletin of the Russian Academy of Sciences Physics, Год журнала: 2025, Номер 89(2), С. 177 - 180

Опубликована: Фев. 1, 2025

Язык: Английский

Процитировано

0
The Response Time of a Silicon-Based Plasmonic Detector of Electromagnetic Radiation DOI
A. V. Shchepetilnikov, А. Р. Хисамеева, Ya. V. Fedotova

и другие.

Bulletin of the Russian Academy of Sciences Physics, Год журнала: 2025, Номер 89(2), С. 181 - 184

Опубликована: Фев. 1, 2025

Язык: Английский

Процитировано

0
Design Optimization of GaN-Based Terahertz IMPATT Sources by Using Artificial Neural Networks DOI
S. Mondal, S. Ray, Biru Rajak

и другие.

Journal of The Institution of Engineers (India) Series D, Год журнала: 2025, Номер unknown

Опубликована: Апрель 24, 2025

Язык: Английский

Процитировано

0
Potentiality of Avalanche Transit Time Devices for Biomedical Applications: A Comprehensive Review DOI
G. Sherlin Shobitha, Girish Chandra Ghivela

Deleted Journal, Год журнала: 2025, Номер unknown

Опубликована: Май 2, 2025

Язык: Английский

Процитировано

0
Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation DOI Creative Commons
Monisha Ghosh,

Shilpi Bhattacharya Deb,

Aritra Acharyya

и другие.

Nanomaterials, Год журнала: 2024, Номер 14(10), С. 873 - 873

Опубликована: Май 17, 2024

In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1−xN/GaN/AlxGa1−xN material system, with a fixed aluminum mole fraction x = 0.3. Two distinct MQW diode configurations, namely p+-n junction-based and Schottky barrier structures, were investigated for their THz potential. To enhance reverse breakdown characteristics, employing mesa etching nitrogen ion implantation edge termination, mitigating issues related to premature soft breakdown. The performance is comprehensively evaluated through steady-state high-frequency characterizations using self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al0.3Ga0.7N/GaN/Al0.3Ga0.7N diodes, as GaN-based 3C-SiC/Si/3C-SiC MQW-based double-drift (DDR) IMPATT are simulated. in diodes significantly reduces device series resistance, enhancing peak continuous power output approximately 300 mW DC conversion efficiency nearly 13% at 1.0 THz. Noise analysis reveals that within zone mitigate noise improve overall performance. Benchmarking against state-of-the-art sources establishes superiority sources, highlighting potential advancing technology its applications.

Язык: Английский

Процитировано

2
Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation DOI Creative Commons
Monisha Ghosh,

Shilpi Bhattacharya Deb,

Dwaipayan Ghosh

и другие.

Research Square (Research Square), Год журнала: 2024, Номер unknown

Опубликована: Янв. 18, 2024

Abstract In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the Al x Ga 1− N/GaN/Al N material system, with a fixed Aluminum mole fraction = 0.3. Two distinct MQW diode configurations, namely p + -n junction-based and Schottky barrier structures, are investigated for their THz potential. To enhance reverse breakdown characteristics, employ mesa etching nitrogen ion-implantation edge termination, mitigating issues related to premature soft breakdown. The performance is comprehensively evaluated through steady-state high-frequency characterizations using self-consistent quantum drift-diffusion (SCQDD) model. Our proposed 0.3 0.7 diodes, as GaN-based 3C-SiC/Si/3C-SiC MQW-based double-drift (DDR) IMPATT simulated. in diodes significantly reduces device series resistance, enhancing peak continuous power output approximately 300 mW DC conversion efficiency nearly 13% at 1.0 THz. Noise analysis reveals that within zone mitigate noise, improving overall performance. Benchmarking against state-of-the-art sources establishes superiority sources, highlighting potential advancing technology applications.

Язык: Английский

Процитировано

0
On-Chip Modification of Titanium Electrothermal Characteristics by Joule Heating: Application to Terahertz Microbolometer DOI Creative Commons

Durgadevi Elamaran,

Ko Akiba,

Hiroaki Satoh

и другие.

Nanomaterials, Год журнала: 2024, Номер 14(2), С. 225 - 225

Опубликована: Янв. 19, 2024

This study demonstrates the conversion of metallic titanium (Ti) to oxide just by conducting electrical current through Ti thin film in vacuum and increasing temperature Joule heating. led improvement thermal properties a microbolometer. A microbolometer with an integrated thermistor heater width 2.7 µm length 50 was fabricated for study. Constant-voltage stresses were applied wire observe effect heating on its properties. Thermistor resistance ~14 times initial observed owing negative large coefficient (TCR) −0.32%/K also treatment, leading improved responsivity ~4.5 from devices untreated thermistors. However, this does not improve noise equivalent power (NEP), due increased flicker noise. Microstructural analyses transmission electron microscopy (TEM), diffraction (TED) energy dispersive X-ray (EDX) confirm formation (TiOx) semiconducting phase (~85% purity) deposited initially, further Formation TiOx during annealing could minimize narrow effect, which we reported previously metal wires, enhancement responsivity.

Язык: Английский

Процитировано

0
AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application DOI Creative Commons
Yang Dai, Yukun Li, Leiyu Gao

и другие.

Journal of Applied Physics, Год журнала: 2024, Номер 135(15)

Опубликована: Апрель 18, 2024

A novel bilateral impact-ionization-avalanche-transit-time (BIMPATT) diode based on AlGaN/GaN two-dimensional electron gas is proposed in this article. The BIMPATT compatible with the available GaN high mobility transistor (HEMT) manufacturing process and has a shorter actual transit distance than existing HEMT-like IMPATT (HIMPATT) diodes. Compared same-sized HIMPATT, optimum frequency of rises from 320 to 420 GHz possesses far wider operating band, especially near 0.9 THz range. maximum DC-RF conversion efficiency 12.9% 17.6%. RF power 3.18 W/mm, which similar 3.12 W/mm HIMPATT. Furthermore, our simulation demonstrated that characteristics are significantly affected by length anode thickness AlGaN barrier layer. effects ohmic contact resistance background impurities also taken into account. This paper provides reference for design enhancement lateral devices.

Язык: Английский

Процитировано

0
Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices DOI Creative Commons
Partha P. Banerjee, Aritra Acharyya, Rajib Das

и другие.

IEEE Access, Год журнала: 2024, Номер 12, С. 123656 - 123677

Опубликована: Янв. 1, 2024

The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN two-dimensional gas (2-DEG). Utilizing nanostrip patch type planar coupling circuit, mutual injection locking between adjacent elements is achieved. provides comprehensive analysis integrated power combining technique in HEM-ATT oscillator. A ten-element combined designed for operation at 1.0 THz, and simulation studies are conducted to examine its DC, large-signal, noise characteristics. capability generating narrow-band wave verified by introducing various levels structural mismatches elements. Results indicate that oscillator can deliver 2.27 W peak with 17% DC THz conversion efficiency THz. average measure found be 12.54 dB. Additionally, compared other state-of-the-art sources evaluate potentiality as an excellent radiator.

Язык: Английский

Процитировано

0