Journal of Solid State Chemistry, Год журнала: 2024, Номер 339, С. 124948 - 124948
Опубликована: Авг. 5, 2024
Язык: Английский
Journal of Solid State Chemistry, Год журнала: 2024, Номер 339, С. 124948 - 124948
Опубликована: Авг. 5, 2024
Язык: Английский
Nano Energy, Год журнала: 2024, Номер 131, С. 110268 - 110268
Опубликована: Сен. 16, 2024
Язык: Английский
Процитировано
3Science China Chemistry, Год журнала: 2025, Номер unknown
Опубликована: Янв. 3, 2025
Язык: Английский
Процитировано
0Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Янв. 10, 2025
Abstract Tin (Sn)‐based perovskites show significant potential in lead‐free perovskite optoelectronics. Currently, the spin‐coating method combining DMSO co‐solvent and antisolvent‐dropping has been adopted to produce Sn‐based films. However, intrinsically oxidizes Sn 2+ while fast causes serious coupling between crystal nucleation growth, leading easy formation of defects poor stability Herein, hydrazine acetate (HAAc) ionic salt, possessing strong coordination ability with , is developed stabilize decouple crystallization by promoting pre‐formed crystals (PFCs) precursor solution enabling self‐assembly PFCs during spin‐coating. The HA x FA 1‐x SnI 3 films fabricated this technique tunable bandgap, low defect density, oriented crystals, producing optoelectronic devices decent photovoltaic electroluminescence performance. DMSO‐free one‐step film‐forming enabled HAAc‐assisted decoupling can open up new avenues for facile low‐cost manufacturing efficient stable adopting
Язык: Английский
Процитировано
0Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Фев. 17, 2025
Abstract Long‐term stability remains challenging due to persistent defects within the perovskite material, particularly at buried interfaces. Strategies address these issues have focused on refining interfaces and managing residual lead iodide (PbI 2 ), which impedes electron transport compromises under prolonged light exposure. This study explores impact of formate (PbFo ) treatment SnO transporting layer (ETL) substrates its subsequent influence performance solar cells (PSCs). The carboxylate functionality Fo − ions exerts multifaceted effects, influencing not only electrical properties ETL but also morphological characteristics crystallization mechanism overlying film. ionized aid in forming bulk as intermediate phases during crystallization. By stabilizing phases, their incorporation suppresses indiscriminate phase transitions from δ ‐phase α perovskite, ensuring production highly crystalline pure with alleviated tensile strain throughout film, near interface. Consequently, strategy showcases enhanced a power conversion efficiency (PCE) 25.69% enables refined interface, devoid PbI , long‐term continuous light‐soaking for 1,000 h. Overall, PbFo stands pioneering approach poised expedite commercialization.
Язык: Английский
Процитировано
0Science China Chemistry, Год журнала: 2025, Номер unknown
Опубликована: Март 19, 2025
Язык: Английский
Процитировано
0Advanced Materials, Год журнала: 2025, Номер unknown
Опубликована: Май 7, 2025
Abstract Realizing high‐quality perovskite films through uniform defect passivation and crystallization control is pivotal to unlocking the potential of scalable applications. However, prevalent small‐molecule additives are inherently susceptible dynamics perovskites, resulting in non‐uniform distribution within crystalline film impeding consistent precise control. While polymers offer improved uniformity, their poor solubility restricts practical To overcome this limitation, an situ self‐polymerization strategy employed, enabling homogeneous coordination between sulfonate‐containing undercoordinated lead cations. This approach enhances quality, promotes larger grain domains, facilitates more efficient charge transport across domain boundaries. As a result, solar cells (PSCs) achieve remarkable power conversion efficiency 25.34% small‐area devices 21.54% 14.0 cm 2 mini‐modules, accompanied by exceptional operational stability. These findings highlight polymerization as effective for leveraging sulfonate challenges, advancing fabrication stable PSCs.
Язык: Английский
Процитировано
0Chemical Synthesis, Год журнала: 2025, Номер 5(3)
Опубликована: Май 15, 2025
Язык: Английский
Процитировано
0Journal of the American Chemical Society, Год журнала: 2025, Номер unknown
Опубликована: Май 16, 2025
Two-dimensional (2D) tin (Sn2+)-based perovskites have emerged as promising p-type semiconducting materials for (opto)electronic devices due to their favorable balance of electrical performance and structural stability. While previous studies on 2D predominantly investigated Ruddlesden-Popper (RP) with monoammonium spacers, Dion-Jacobson (DJ) diammonium spacers recently sparked attention in the research community. The strong hydrogen bonds at both ends spacer, connecting neighboring inorganic octahedral layers, promote stability efficient charge transport DJ perovskites. This study systematically investigates a series Sn2+ perovskites, [H3N-(CH2)m-(NH)3SnI4] (m = 3-8), explore influence from length spacer chains lattice structures, film crystallinity, properties. Our findings reveal that even-numbered 4, 6, 8) exhibit well-ordered layered whereas those odd-numbered 3, 5, 7) disrupt formation structures. Furthermore, we precursor stoichiometry can govern phase evolution along role parity. Among 1,4-butanediammonium iodide (BDASnI4, m 4) exhibits optimal superior Moreover, introduction an additional self-assembly monolayer ([2-(3,6-diiodo-9H-carbazol-9-yl)ethyl]phosphonic acid, I-2PACz) between dielectric channel layers further enhances interface quality reduces trap density. optimized transistor significantly reduced hysteresis boosted field-effect mobility up 1.45 cm2 V-1 s-1.
Язык: Английский
Процитировано
0Chemical Engineering Journal, Год журнала: 2024, Номер 497, С. 154603 - 154603
Опубликована: Авг. 8, 2024
Язык: Английский
Процитировано
2Nano Letters, Год журнала: 2024, Номер unknown
Опубликована: Ноя. 26, 2024
The precise modulation of PbI
Язык: Английский
Процитировано
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