Advanced Optical Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Окт. 15, 2024
Abstract
Regulating
the
electronic
structures
and
carrier
dynamics
in
2D
materials
via
elastic
strain
is
a
fascinating
avenue
for
tailoring
their
optoelectronic
properties
at
atomic
scale.
Here,
abnormal
response
of
indirect
excitons
to
non‐uniform
MoS
2
flakes
reported.
The
introduced
by
transferring
them
pre‐prepared
convex
cross
on
SiO
/Si
substrate,
where
topography
distribution
are
determined
force
microscopy
Raman
spectroscopy,
respectively.
It
observed
that
emission
energy
shows
an
unexpected
blue‐shift
followed
red‐shift
with
increasing
local
tensile
strain,
which
sharp
contrast
linear
direct
excitons.
Density
functional
theory
calculations
reveal
shift
arises
from
strain‐induced
competition
between
two
bandgap
transitions
spatial
exciton
funnel
effect
field.
This
work
provides
new
insights
into
semiconductors,
possesses
potential
applications
flexible
devices.
Nano-Micro Letters,
Год журнала:
2024,
Номер
16(1)
Опубликована: Авг. 9, 2024
Abstract
Two-dimensional
(2D)
transition
metal
dichalcogenides
(TMDs)
allow
for
atomic-scale
manipulation,
challenging
the
conventional
limitations
of
semiconductor
materials.
This
capability
may
overcome
short-channel
effect,
sparking
significant
advancements
in
electronic
devices
that
utilize
2D
TMDs.
Exploring
dimension
and
performance
limits
transistors
based
on
TMDs
has
gained
substantial
importance.
review
provides
a
comprehensive
investigation
into
these
single
2D-TMD
transistor.
It
delves
impacts
miniaturization,
including
reduction
channel
length,
gate
source/drain
contact
dielectric
thickness
transistor
operation
performance.
In
addition,
this
detailed
analysis
parameters
such
as
resistance,
subthreshold
swing,
hysteresis
loop,
carrier
mobility,
on/off
ratio,
development
p-type
logic
transistors.
details
two
logical
expressions
transistor,
current
voltage.
also
emphasizes
role
TMD-based
memory
devices,
focusing
enhancing
speed,
endurance,
data
retention,
extinction
well
reducing
energy
consumption
functioning
artificial
synapses.
demonstrates
calculating
methods
dynamic
synaptic
devices.
not
only
summarizes
state
art
field
but
highlights
potential
future
research
directions
applications.
underscores
anticipated
challenges,
opportunities,
solutions
navigating
boundaries
Nanomaterials,
Год журнала:
2024,
Номер
14(11), С. 918 - 918
Опубликована: Май 23, 2024
From
quantum
communications
to
computing,
single-photon
emitters
(SPEs)
are
essential
components
of
numerous
technologies.
Two-dimensional
(2D)
materials
have
especially
been
found
be
highly
attractive
for
the
research
into
nanoscale
light–matter
interactions.
In
particular,
localized
photonic
states
at
their
surfaces
attracted
great
attention
due
enormous
potential
applications
in
optics.
Recently,
SPEs
achieved
various
2D
materials,
while
challenges
still
remain.
This
paper
reviews
recent
progress
on
these
based
such
as
transition
metal
dichalcogenides
(TMDs),
hexagonal
boron
nitride
(hBN),
and
twisted-angle
materials.
Additionally,
we
summarized
strategies
create,
position,
enhance,
tune
emission
wavelength
by
introducing
external
fields
system.
For
example,
pronounced
enhancement
SPEs’
properties
can
coupling
with
fields,
plasmonic
field,
locating
optical
microcavities.
Finally,
this
also
discusses
current
offers
perspectives
that
could
further
stimulate
scientific
field.
These
emitters,
unique
physical
integration
potential,
appealing
information
communication,
well
other
technological
fields.
Nano-Micro Letters,
Год журнала:
2025,
Номер
17(1)
Опубликована: Янв. 8, 2025
Abstract
Two-dimensional
transition
metal
dichalcogenides
(2D
TMDCs)
have
received
considerable
attention
in
local
strain
engineering
due
to
their
extraordinary
mechanical
flexibility,
electonic
structure,
and
optical
properties.
The
strain-induced
out-of-plane
deformations
2D
TMDCs
lead
diverse
excitonic
behaviors
versatile
modulations
properties,
paving
the
way
for
development
of
advanced
quantum
technologies,
flexible
optoelectronic
materials,
straintronic
devices.
Research
on
has
been
delved
into
fabrication
techniques,
electronic
state
variations,
applications.
This
review
begins
by
summarizing
state-of-the-art
methods
introducing
TMDCs,
followed
an
exploration
impact
intriguing
phenomena
resulting
from
strain,
such
as
exciton
funnelling
anti-funnelling,
are
also
discussed.
We
then
shift
focus
application
locally
strained
emitters,
with
various
strategies
outlined
modulating
properties
TMDC-based
emitters.
Finally,
we
discuss
remaining
questions
this
field
provide
outlook
future
TMDCs.
Abstract
Transition
metal
dichalcogenides
(TMDs)
such
as
MoS
2
and
WS
emerge
promising
materials
in
optoelectronics,
especially
for
flexible
photo‐
/image‐sensors
due
to
their
direct
bandgap
nature.
However,
the
intrinsic
bandgaps
of
these
semiconductor
monolayers
(e.g.,
≈1.86
eV
≈2.0
eV)
restrict
operational
wavelength
range
developed
photosensors
visible
spectrum.
In
addition,
ultrathin
nature
provides
a
limited
optical
absorption
cross‐section
that
restricts
device's
performance.
Exploiting
strong
impact
strain
on
electronic
band
structure,
engineering
has
emerged
approach
adjusting
electrical
characteristics
layered
semiconductors.
particular,
application
tensile
can
decrease
bandgaps,
which
potentially
extend
toward
near‐infrared
(NIR)
wavelength.
Herein,
non‐conventional
crumpling
is
employed
incorporate
uniaxial
into
graphene/TMD/graphene
metal‐semiconductor‐metal
photodetector
(PD)
array.
The
utilized
crumpled
geometry
exclusive
photon
management
with
enhanced
light
scattering
trapping
at
sinusoidal
surface
results
increased
NIR
range.
Advanced Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Фев. 21, 2025
Abstract
2D
materials
exhibit
unique
properties
for
next‐generation
electronics
and
quantum
devices.
However,
their
sensitivity
to
temperature
variations,
particularly
concerning
cooling‐induced
strain,
remains
underexplored
systematically.
This
study
investigates
the
effects
of
strain
on
monolayer
MoSe
2
at
cryogenic
temperatures.
It
is
emphasized
that
mismatch
in
thermal
expansion
coefficients
between
material
bulk
substrate
leads
significant
external
which
superimposes
internal
material.
By
engineering
material‐substrate
2D‐bulk
interface,
resulting
conditions
are
characterized
reveal
substantial
compressive
induces
new
emission
features
linked
direct‐to‐indirect
bandgap
transition,
as
confirmed
by
photoluminescence
transient
absorption
spectroscopy
studies.
Finally,
it
demonstrated
encapsulation
with
hexagonal
boron
nitride
can
mitigate
2D–2D
interfaces,
achieving
results
similar
those
suspended
samples.
The
findings
address
key
challenges
quantifying
characterizing
types
across
different
distinguishing
from
other
temperature‐dependent
phenomena,
designing
strain‐sensitive
devices
extreme
conditions.
