Advances in Liquid Metal Printed 2D Oxide Electronics

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Июнь 10, 2024

Abstract 2D metal oxides (2DMOs) have recently emerged as a high‐performance class of ultrathin, wide bandgap materials offering exceptional electrical and optical properties for area device applications in energy, sensing, display technologies. Liquid printing represents thermodynamically advantageous strategy synthesizing 2DMOs by solvent‐free vacuum‐free scalable method. Here, recent progress the field liquid printed is reviewed, considering how physics Cabrera‐Mott oxidation gives this rapid, low‐temperature process advantages over alternatives such sol‐gel nanoparticle processing. The growth, composition, crystallinity burgeoning set 1–3 nm thick semiconducting, conducting, dielectric are analyzed that uniquely suited fabrication flexible electronics. limitations these strategies considered, highlighting opportunities to amplify impact 2DMO through large‐area printing, design doped alloys, stacking electrostatically engineer new oxide heterostructures, implementation devices gas photodetection, neuromorphic computing.

Язык: Английский

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A toolbox for investigating liquid metal systems

Cell Reports Physical Science, Год журнала: 2024, Номер 5(2), С. 101820 - 101820

Опубликована: Фев. 1, 2024

The exceptional properties of liquid metals at room temperature, such as their fluidity, stretchability, deformability, and potential applications, have rapidly inspired the scientific community. At present, main challenge is overcoming technical barriers associated with characterization metal systems, which resulted in molecular structure remaining effectively unknown. This lack knowledge has significantly hampered progress emerging field chemistry, prohibiting tailored design relegating researchers to work by trial error. In recent years, several technological developments, including improved analytical tools, emerged that tackle current challenges. this review, we present a comprehensive appraisal various state-of-the-art techniques can help uncover answers long-standing questions domain metal-in-metal colloidal systems. We describe selected generic methodologies unique approaches capture changes physical chemical behavior molten presence internal external stimuli. combination, outlined tools will deepen our understanding chemistry accelerate research translation provide solutions areas catalysis, biomedicine, reconfigurable electronics.

Язык: Английский

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Atomic engineering of two-dimensional materials via liquid metals

Chemical Society Reviews, Год журнала: 2024, Номер 53(13), С. 7158 - 7201

Опубликована: Янв. 1, 2024

Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities material design property control but remains challenging due to the high expense single-crystal solid metal catalysts. Liquid metals, with fluidity, ductility, dynamic surface, isotropy, significantly enhanced catalytic processes crucial synthesizing including decomposition, diffusion, nucleation, thus an unprecedented over structures properties. Besides, emergence liquid alloy makes creation diverse heterostructures possible, offering a dimension atomic engineering. Significant achievements been made this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures,

Язык: Английский

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Visible-Active Artificial Synapses Based on Ultrathin Indium Oxide

ACS Applied Nano Materials, Год журнала: 2024, Номер 7(2), С. 1845 - 1852

Опубликована: Янв. 16, 2024

One of the key requirements to emulate synaptic features in optoelectronic devices is presence persistent photoconductivity (PPC). While there are several visible-active materials, transparent semiconducting oxides (TSOs) have commercially established production processes and applications. Despite inherently exceptional properties many atomically thin TSOs along with PPC, their wide band gap renders them feasible only for ultraviolet (UV)-active Hence, approaches need be developed that allow one tailor such semiconductors synapses a strong emerging area research. Over past few years, liquid metal (LM) printing techniques enabled realization nonstratified an form, resulting oxide systems enhanced performances, which can further engineered using postsynthesis processing techniques. Here, we utilize nonlayered ultrathin oxide, indium (In2O3), demonstrate photoelectrical response visible spectrum peak responsivity 6.67 × 103 A/W at 455 nm. The 2.2 nm sheets operating under driving voltage 200 mV successfully able detect short pulses 500 ms while showcasing PPC characteristics without additional bias. Key multisynaptic functionalities replicated blue green light sources, demonstrating viable pathway integrate light-active

Язык: Английский

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Low-dimensional In₂O₃ nanostructures on MgO cubes

Nanoscale, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Self-organized and selective stabilization of trigonal-In 2 O 3 on MgO nanocubes.

Язык: Английский

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High‐Entropy Liquid Metal Process for Transparent Ultrathin p‐Type Gallium Oxide

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 12, 2025

Abstract The naturally self‐limiting oxide formed on the surface of liquid metals can be exfoliated and transferred onto various substrates. This layer with a thickness few nanometers is typically highly transparent engineered for applications in large‐area optoelectronics. While incorporation solvated elements into interfacial post‐transition metal‐based demonstrated n ‐doping, achieving p ‐doping such ultrathin layers remains significant challenge. In this study, use dissolved indium (In), platinum (Pt), gold (Au), palladium (Pd), copper (Cu) gallium (Ga)‐based alloys investigated to create high‐entropy metal system. allows exfoliation p‐ doped layer, predominantly composed (Ga 2 O 3 ). these system results their atomic dispersion, Cu exhibiting limited presence. atomically dispersed Pt, Au, Pd scavenge oxygen during at moderate temperatures release them cooling down, promoting emergence trivalent metallic Ga layer. work presents novel doping strategy achieve ‐doped liquid‐metal‐derived layers, which maintain high transparency.

Язык: Английский

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Vacuum-Free Liquid-Metal-Printed 2D Semiconducting Tin Dioxide: The Effect of Annealing

ACS Applied Electronic Materials, Год журнала: 2024, Номер unknown

Опубликована: Фев. 12, 2024

Thin film transistors (TFTs) offer unparalleled opportunities for the fabrication of multifunctional electronic and optoelectronic devices. In this work, we report a vacuum-free liquid metal exfoliation technique rapidly printing ∼2 nm-thick layer oxide from molten tin. We explore effect rapid thermal annealing at 450 °C on stoichiometry, morphology, crystal structure resulting tin nanosheets. The annealed samples exhibit dominant SnO2 phase high degree transparency (>99%) in visible spectra. Field-effect based two-dimensional (2D) films show typical n-channel conduction with field-effect mobility ∼7.5 cm2 V–1 s–1. Photodetectors utilizing dioxide demonstrate significant improvement photoresponsivity reaching value 5.2 × 103 A W–1 compared to that found an unannealed sample ultraviolet wavelength 285 nm. device performance is due nanocrystalline changes within layers during process. This work offers straightforward ambient air-compatible method depositing ultrathin, large-area semiconducting oxides as potential candidates enabling emerging applications transparent nanoelectronics optoelectronics.

Язык: Английский

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Sub-5 nm ultrathin IGO film transistor printed by micro-doped InGa liquid alloy

Applied Surface Science, Год журнала: 2024, Номер 663, С. 160131 - 160131

Опубликована: Апрель 20, 2024

Язык: Английский

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Metal-Rich Zn-Sn-O-N Channel-Based Thin Film Transistor Photodetectors

IEEE Transactions on Electron Devices, Год журнала: 2024, Номер 71(7), С. 4166 - 4172

Опубликована: Июнь 6, 2024

Язык: Английский

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Ultrathin 2D IZO film transistors printed via liquid InZn alloys: insights into the oxidation behavior and enhanced mobility properties

Journal of Materials Chemistry C, Год журнала: 2024, Номер 12(36), С. 14675 - 14684

Опубликована: Янв. 1, 2024

Atomically ultra-thin Zn-doped In 2 O 3 films with high transparency and superior electronic properties were obtained by a liquid In–Zn printing approach.

Язык: Английский

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