Synaptic devices based on silicon carbide for neuromorphic computing
Journal of Semiconductors,
Год журнала:
2025,
Номер
46(2), С. 021403 - 021403
Опубликована: Фев. 1, 2025
Abstract
To
address
the
increasing
demand
for
massive
data
storage
and
processing,
brain-inspired
neuromorphic
computing
systems
based
on
artificial
synaptic
devices
have
been
actively
developed
in
recent
years.
Among
various
materials
investigated
fabrication
of
devices,
silicon
carbide
(SiC)
has
emerged
as
a
preferred
choices
due
to
its
high
electron
mobility,
superior
thermal
conductivity,
excellent
stability,
which
exhibits
promising
potential
applications
harsh
environments.
In
this
review,
progress
SiC-based
is
summarized.
Firstly,
an
in-depth
discussion
conducted
regarding
categories,
working
mechanisms,
structural
designs
these
devices.
Subsequently,
several
application
scenarios
are
presented.
Finally,
few
perspectives
directions
their
future
development
outlined.
Язык: Английский
A light-driven device for neuromorphic computing
Light Science & Applications,
Год журнала:
2025,
Номер
14(1)
Опубликована: Янв. 8, 2025
Abstract
A
unique
optoelectronic
synaptic
device
has
been
developed,
leveraging
the
negative
photoconductance
property
of
a
single-crystal
material
system
called
Cs
2
CoCl
4
.
This
exhibits
simultaneous
volatile
resistive
switching
response
and
sensitivity
to
optical
stimuli,
positioning
as
promising
candidate
for
optically
enhanced
neuromorphic
applications.
Язык: Английский
Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses
Advanced Photonics Research,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 26, 2025
The
conventional
von
Neumann
architecture
is
increasingly
losing
the
capacity
to
satisfy
urgent
demand
for
high‐speed
parallel
computing,
energy
efficiency,
and
ultralow
power
consumption
owing
rapid
growth
of
information.
Brain‐inspired
neuromorphic
computing
presents
an
opportunity
overcome
inherent
limitations
computers.
In
recent
years,
photoelectric
devices
have
garnered
significant
attention
their
potential
applications
in
brain–machine
interfaces,
intelligent
sensing,
computing.
Herein,
a
simple
two‐terminal
light‐stimulated
synaptic
device
fabricated
using
GaN
thin
films
through
metal‐organic
chemical
vapor
deposition.
demonstrates
ability
mimic
various
biological
functions,
including
learning‐experience
behavior,
transition
from
short‐term
long‐term
memory,
paired‐pulse
facilitation,
visual
recognition
memory.
this
research,
effective
strategy
developing
photonic
synapses
GaN‐based
materials
bio‐realistic
artificial
intelligence
systems
presented.
Язык: Английский
Macro-scale phase purity and epitaxiality of pulse-laser-deposited Ga2O3 on c-plane sapphire
Thin Solid Films,
Год журнала:
2025,
Номер
unknown, С. 140673 - 140673
Опубликована: Апрель 1, 2025
Язык: Английский
Deep ultraviolet optoelectronic memristors based on gallium oxide for biomimetic visual processing and neuromorphic memory applications
Applied Physics Letters,
Год журнала:
2025,
Номер
126(14)
Опубликована: Апрель 1, 2025
Deep
ultraviolet
(DUV)
has
a
wide
range
of
applications
in
areas
such
as
the
monitoring
and
communication
fields.
However,
separation
sensor
units
memory
conventional
DUV
photodetectors
will
increase
costs
reduce
processing
speed.
In
this
paper,
we
report
development
photoelectric
memristors
fabricated
using
gallium
oxide
(Ga2O3)
to
emulate
synaptic
functions
bionic
visual
system.
The
devices
showcase
nonvolatile
resistance
switching
behavior,
effectively
mimicking
neuromorphic
processes
short-term
plasticity
long-term
both
singular
repeated
cycles
under
optical
pulse
modulation.
Moreover,
fabrication
5
×
array
configuration
allowed
us
simulate
learning,
formation,
forgetting
process,
along
with
ability
store
erase
image
information.
This
work
not
only
broadens
application
scope
Ga2O3
an
ultra-wide
bandgap
semiconductor
but
also
offers
insight
into
integrated
sensing-storage
for
artificial
intelligence
systems,
paving
way
future
advancements
engineering
bio-inspired
computing
systems.
Язык: Английский
Angle-resolved polarization Raman spectroscopy of β-Ga2O3 and their application in sensitive solar-blind photodetection
Applied Physics Letters,
Год журнала:
2024,
Номер
125(14)
Опубликована: Сен. 30, 2024
Polarization-sensitive
photodetection
has
promising
prospects
for
civilian
and
military
applications
based
on
anisotropic
semiconductors.
However,
it
is
greatly
limited
due
to
the
lack
of
valid
materials
as
well
terrible
linear
dichroism
ratio.
In
this
Letter,
a
metal–oxide–semiconductor
β-Ga2O3
with
strong
property
proposed
highly
efficient
polarizing
detection,
which
can
potentially
overcome
these
limitations.
Angle-resolved
polarization
Raman
spectroscopy
was
performed
confirm
excellent
phonon
vibration.
Unique
narrow
solar-blind
polarization-sensitive
photo-absorption
(240–270
nm)
be
observed,
attributed
natural
anisotropy,
referring
in
particular
polarization-resolved
absorption
surround
bandgap
β-Ga2O3.
Benefiting
from
structural
photodetector
exhibits
an
dichroic
ratio
∼1.8.
Moreover,
obvious
color
change
observed
under
different
polarized
angles,
providing
great
potential
imaging.
With
advantages,
we
anticipated
that
research
will
pave
avenues
fabrication
UV
photodetectors.
Язык: Английский
Photovoltaic bioelectronics merging biology with new generation semiconductors and light in biophotovoltaics photobiomodulation and biosensing
Deleted Journal,
Год журнала:
2024,
Номер
1(1)
Опубликована: Ноя. 21, 2024
Abstract
This
review
covers
advancements
in
biosensing,
biophotovoltaics,
and
photobiomodulation,
focusing
on
the
synergistic
use
of
light,
biomaterials,
cells
or
tissues,
interfaced
with
photosensitive
dye-sensitized,
perovskite,
conjugated
polymer
organic
semiconductors
nanoparticles.
Integration
semiconductor
biological
systems,
using
non-invasive
light-probes
-stimuli
for
both
sensing
controlling
behavior,
has
led
to
groundbreaking
applications
like
artificial
retinas.
From
fusion
photovoltaics
biology,
a
new
research
field
emerges:
photovoltaic
bioelectronics.
Язык: Английский
Mixed Metal Oxide Heterojunction for High‐Performance Self‐Powered Ultraviolet Photodetection
Small,
Год журнала:
2024,
Номер
unknown
Опубликована: Дек. 2, 2024
Abstract
The
field
of
photoelectrochemical‐type
(PEC)
ultraviolet
(UV)
photodetectors
has
witnessed
swift
progression
due
to
their
facile
fabrication
processes
and
self‐powered
function.
realization
high‐performance
PEC
UV
is
attractive
challenging.
In
this
study,
the
application
ZnAl
mixed
metal
oxide
(MMO)
heterojunctions
in
introduced
for
first
time.
MMO
are
composed
ZnO
2
O
4
,
which
provide
a
suitable
band
structure
accelerating
photogenerated
carrier
separation
transport,
boosting
photodetection.
Irradiation
with
light
(365
nm)
results
high
responsivity
46.82
mA
W
−1
fast
response
time
18/35
ms.
An
impressive
UV/visible
rejection
ratio
1088.8
excellent
multi‐cycle
stability
demonstrated,
exceeding
most
recently
reported
photodetectors.
Moreover,
possess
underwater
optical
communication
capability,
confirming
promising
potential
optoelectronic
devices.
This
study
provides
new
perspective
on
development
Язык: Английский