All-optically Controlled Memristive Device Based on Cu2O/TiO2 Heterostructure Toward Neuromorphic Visual System DOI Creative Commons
Jun Xie, Xuanyu Shan,

Nanzhi Zou

и другие.

Research, Год журнала: 2024, Номер 8

Опубликована: Дек. 27, 2024

The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient perception. As a p-type material, Cu

Язык: Английский

Nonvolatile photoelectric memristor for reconfigurable Boolean logic operation and data storage DOI
Lu Wang,

Jiazhuang Li,

Qiang He

и другие.

Applied Materials Today, Год журнала: 2024, Номер 39, С. 102294 - 102294

Опубликована: Июнь 24, 2024

Язык: Английский

Процитировано

0
Light-controlled threshold switching memristive neuron devices for color photoreceptor DOI
Xuanyu Shan, Zhiyong Liu, Ye Tao

и другие.

IEEE Electron Device Letters, Год журнала: 2024, Номер 45(10), С. 1815 - 1818

Опубликована: Июль 29, 2024

Язык: Английский

Процитировано

0
Redox‐Active Polyaniline Covalently grafted Black Phosphorus Nanosheets for Integrated Digital‐Analogue Memristors DOI

Qiang Che,

Sai Sun,

Hou Jie

и другие.

Macromolecular Rapid Communications, Год журнала: 2024, Номер unknown

Опубликована: Сен. 12, 2024

Abstract Surface covalent modification of black phosphorus (BP) with organic polymers represents a promising strategy to enhance its stability and tailor electronic properties. Despite this potential, developing memristive materials through suitable polymer structures, grafting pathways, polymerization techniques remains challenging. In study, polyaniline (PANI)‐covalently grafted nanosheets (BPNS) are successfully prepared redox functionalities via the in situ aniline on surface 4‐aminobenzene‐modified BPNS. The PANI coating protects BP from direct exposure oxygen water, it endows material analog properties, characterized by continuously adjustable resistance within limited voltage scan range. When subjected broader scan, Al/PANI‐g‐BPNS/ITO device demonstrates typical bistable digital behavior. integration both single paves way for development high‐density, multifunctional components.

Язык: Английский

Процитировано

0
Multi-wavelength plasmonic optoelectronic memristor for reconfigurable logic operations and mixed-color pattern recognition DOI
Jiaqi Han, Zhuangzhuang Li, Tao Zeng

и другие.

Science China Information Sciences, Год журнала: 2024, Номер 68(2)

Опубликована: Дек. 18, 2024

Язык: Английский

Процитировано

0
All-optically Controlled Memristive Device Based on Cu2O/TiO2 Heterostructure Toward Neuromorphic Visual System DOI Creative Commons
Jun Xie, Xuanyu Shan,

Nanzhi Zou

и другие.

Research, Год журнала: 2024, Номер 8

Опубликована: Дек. 27, 2024

The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient perception. As a p-type material, Cu

Язык: Английский

Процитировано

0