All-optically Controlled Memristive Device Based on Cu2O/TiO2 Heterostructure Toward Neuromorphic Visual System DOI Creative Commons
Jun Xie, Xuanyu Shan,

Nanzhi Zou

et al.

Research, Journal Year: 2024, Volume and Issue: 8

Published: Dec. 27, 2024

The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient perception. As a p-type material, Cu

Language: Английский

Nonvolatile photoelectric memristor for reconfigurable Boolean logic operation and data storage DOI
Lu Wang,

Jiazhuang Li,

Qiang He

et al.

Applied Materials Today, Journal Year: 2024, Volume and Issue: 39, P. 102294 - 102294

Published: June 24, 2024

Language: Английский

Citations

0
Light-controlled threshold switching memristive neuron devices for color photoreceptor DOI
Xuanyu Shan, Zhiyong Liu, Ye Tao

et al.

IEEE Electron Device Letters, Journal Year: 2024, Volume and Issue: 45(10), P. 1815 - 1818

Published: July 29, 2024

Language: Английский

Citations

0
Redox‐Active Polyaniline Covalently grafted Black Phosphorus Nanosheets for Integrated Digital‐Analogue Memristors DOI

Qiang Che,

Sai Sun,

Hou Jie

et al.

Macromolecular Rapid Communications, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 12, 2024

Abstract Surface covalent modification of black phosphorus (BP) with organic polymers represents a promising strategy to enhance its stability and tailor electronic properties. Despite this potential, developing memristive materials through suitable polymer structures, grafting pathways, polymerization techniques remains challenging. In study, polyaniline (PANI)‐covalently grafted nanosheets (BPNS) are successfully prepared redox functionalities via the in situ aniline on surface 4‐aminobenzene‐modified BPNS. The PANI coating protects BP from direct exposure oxygen water, it endows material analog properties, characterized by continuously adjustable resistance within limited voltage scan range. When subjected broader scan, Al/PANI‐g‐BPNS/ITO device demonstrates typical bistable digital behavior. integration both single paves way for development high‐density, multifunctional components.

Language: Английский

Citations

0
Multi-wavelength plasmonic optoelectronic memristor for reconfigurable logic operations and mixed-color pattern recognition DOI
Jiaqi Han, Zhuangzhuang Li, Tao Zeng

et al.

Science China Information Sciences, Journal Year: 2024, Volume and Issue: 68(2)

Published: Dec. 18, 2024

Language: Английский

Citations

0
All-optically Controlled Memristive Device Based on Cu2O/TiO2 Heterostructure Toward Neuromorphic Visual System DOI Creative Commons
Jun Xie, Xuanyu Shan,

Nanzhi Zou

et al.

Research, Journal Year: 2024, Volume and Issue: 8

Published: Dec. 27, 2024

The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient perception. As a p-type material, Cu

Language: Английский

Citations

0