
Device, Год журнала: 2024, Номер unknown, С. 100600 - 100600
Опубликована: Окт. 1, 2024
Язык: Английский
Device, Год журнала: 2024, Номер unknown, С. 100600 - 100600
Опубликована: Окт. 1, 2024
Язык: Английский
Talanta, Год журнала: 2025, Номер unknown, С. 128058 - 128058
Опубликована: Апрель 1, 2025
Язык: Английский
Процитировано
0ACS Applied Nano Materials, Год журнала: 2025, Номер unknown
Опубликована: Апрель 9, 2025
Язык: Английский
Процитировано
0Advanced Electronic Materials, Год журнала: 2024, Номер 10(10)
Опубликована: Авг. 2, 2024
Abstract Industry 4.0 is accelerating the growth of connected devices, resulting in an exponential increase generated data. The current semiconductor technology facing challenges miniaturization and power consumption, demanding for more efficient computation where new materials devices need to be implemented. One most promising candidates next technological leap memristor. Due their up‐scale manufacturing, majority memristors employed conventional deposition techniques (physical chemical vapor deposition), which can highly costly. Recently, printed have gained a lot attention because potential large‐scale, fast, affordable manufacturing. They also help reduce material waste, supports transition sustainable environmentally friendly economy. This review provides perspective on electronics fabrication memristive presenting overview main printing techniques, suitable development. Additionally, it focuses used switching layer by comparing its performance. Ultimately, application highlighted showing tremendous evolution this field, as well opportunities that are expected face following years.
Язык: Английский
Процитировано
2Journal of Materials Chemistry C, Год журнала: 2024, Номер 12(35), С. 13762 - 13783
Опубликована: Янв. 1, 2024
This review introduces the potential applications of biomimetic systems based on flexible memristive biosensors in medical field intelligent healthcare.
Язык: Английский
Процитировано
2Biomaterials, Год журнала: 2024, Номер 314, С. 122861 - 122861
Опубликована: Окт. 3, 2024
Язык: Английский
Процитировано
2Applied Physics Letters, Год журнала: 2024, Номер 125(19)
Опубликована: Ноя. 4, 2024
In recent years, memristors have garnered significant attention, particularly those based on the oxygen vacancy-driven filamentary conduction mechanism. However, studies utilizing single-crystal materials for remain scarce. This study investigates memristive effect of Se-implanted β-Ga2O3 material, fabricated through ion implantation. X-ray photoelectron spectroscopy and depth profiling revealed that Se doping significantly increased concentration vacancies, crucial resistive switching (RS). Electrical testing demonstrated stable repeatable behavior, attributed to mechanism driven by vacancies. These findings highlight potential implantation tuning surface properties Ga2O3-based memristors, advancing their application in next-generation electronic devices.
Язык: Английский
Процитировано
1Sensors and Actuators A Physical, Год журнала: 2024, Номер unknown, С. 116056 - 116056
Опубликована: Ноя. 1, 2024
Язык: Английский
Процитировано
1Applied Physics Letters, Год журнала: 2024, Номер 125(21)
Опубликована: Ноя. 18, 2024
Memristive devices based on layered materials have the potential to enable low power electronics with ultra-fast operations toward development of next generation memory and computing technologies. Memristor performance switching behavior crucially depend matrix type electrodes used. In this work, we investigate effect different in 1D MoO2–MoS2 core shell nanowire memristors by highlighting their role achieving distinct behavior. Analog digital resistive are realized carbon passive (multi-layer graphene multiwall nanotube) 3D active metal (silver nickel) electrodes, respectively. Temperature dependent electrical transport studies conducting filament down cryogenic temperatures reveal its semiconducting metallic nature for top These investigations shed light physics formation provide a knob design develop specific characteristics desired end uses.
Язык: Английский
Процитировано
1Journal of Semiconductors, Год журнала: 2024, Номер 45(12), С. 121601 - 121601
Опубликована: Дек. 1, 2024
Abstract Human skin, through its complex mechanoreceptor system, possesses the exceptional ability to finely perceive and differentiate multimodal mechanical stimuli, forming biological foundation for dexterous manipulation, environmental exploration, tactile perception. Tactile sensors that emulate this sensory capability, particularly in detection, decoupling, application of normal shear forces, have made significant strides recent years. This review comprehensively examines latest research advancements force sensing, delving into design decoupling methods multi-unit structures, multilayer encapsulation bionic structures. It analyzes advantages disadvantages various sensing principles, including piezoresistive, capacitive, self-powered mechanisms, evaluates their potential health monitoring, robotics, wearable devices, smart prosthetics, human-machine interaction. By systematically summarizing current progress technical challenges, aims provide forward-looking insights future directions, driving development electronic skin technology ultimately achieve perception capabilities comparable human skin.
Язык: Английский
Процитировано
1Device, Год журнала: 2024, Номер unknown, С. 100600 - 100600
Опубликована: Окт. 1, 2024
Язык: Английский
Процитировано
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