Bi2O2Se Nanoplates for Lateral Memristor Devices
ACS Applied Nano Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 30, 2025
Язык: Английский
Interface engineering for enhanced memristive devices and neuromorphic computing applications
International Materials Reviews,
Год журнала:
2025,
Номер
unknown
Опубликована: Март 3, 2025
Memristors,
or
memristive
devices,
have
gained
substantial
attention
as
valuable
building
blocks
for
neuromorphic
computing
systems.
Their
dynamic
reconfiguration
enables
simulation
of
essential
analog
synaptic
and
neuronal
functionalities,
making
them
promising
candidates
brain-inspired
neural
network
computing.
In
recent
years,
conventional
thin
film
materials
low-dimensional
nanomaterials
been
extensively
explored
in
devices
the
development
applications.
Despite
progress
several
technical
challenges
persist,
such
device-to-device
uniformity
high
device
density
integration,
requiring
further
improvement
at
single
system
level
integration.
Interface
engineering,
through
careful
design
physical
chemical
nature
interface
two-terminal
structure,
emerges
a
method
to
address
these
challenges.
This
review
highlights
utilization
engineering
techniques
optimize
behavior,
covering
both
including
0D
quantum
dots
nanoparticles,
1D
nanowire/nanotube,
2D
materials,
heterostructures
nanoscale
materials.
Two
main
classes
mechanisms
involved
specifically,
electronic
ionic
modulating
are
described
detail.
Recent
advancements
optical
artificial
functionalities
integration
also
reviewed.
concludes
with
remaining
how
would
be
addressing
issues.
comprehensive
serves
guide
atomic-scale
research,
while
emphasizing
broader
potential
kinetics
enabling
various
exciting
physiochemical
properties
reconfigurable
functionalities.
Язык: Английский
Plasma treatment of bismuth-doped MoS2 with excellent supercapacitor performance
Journal of Materials Chemistry C,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 1, 2025
Bi
doped
MoS
2
after
plasma
treatment
exhibits
excellent
electrochemical
properties.
Язык: Английский
Towards room-temperature stable topological magnetic semiconductors based on two-dimensional Janus vanadium chalcogenides
Journal of Materials Chemistry C,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 1, 2025
A
spintronic
device
based
on
a
skyrmion
transistor,
designed
to
perform
specific
functions
by
encoding
“0”
and
“1”
using
VXY
Janus
structures.
Язык: Английский
Large Rashba Spin Splitting in Janus WTeSe/InN Heterostructures Through Interfacial Coupling
physica status solidi (RRL) - Rapid Research Letters,
Год журнала:
2025,
Номер
unknown
Опубликована: Май 13, 2025
The
manipulation
of
the
Rashba
effect
in
low‐dimensional
systems
is
desirable
for
next
generation
spintronic
devices.
Herein,
a
novel
strategy
proposed
to
regulate
spin
splitting
through
interfacial
interaction
Janus
WTeSe/InN
heterostructures
based
on
first‐principles
calculations.
Three
kinds
with
different
stacking
interfaces
are
constructed,
and
dependence
constant
configurations
atoms
comprehensively
investigated.
maximum
1.55
eV
Å
−1
achieved
WTeSe/N‐terminated
InN
heterostructure,
representing
193%
enhancement
compared
pristine
WTeSe
(0.53
).
It
found
that
enhanced
related
not
only
net
electric
field
but
also
interface
elements
(or
coupling).
Furthermore,
heterostructure
regulated
by
interlayer
distances
an
external
field.
constants
increase
1.95
1.74
at
spacing
2.1
under
applied
−0.3
V
,
respectively,
showing
increases
26%
12%.
This
work
paves
way
modify
2D
semiconductors.
Язык: Английский