Large Rashba Spin Splitting in Janus WTeSe/InN Heterostructures Through Interfacial Coupling DOI
Yuxiang Zhang, Zongnan Zhang,

Mengyu Liu

et al.

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: May 13, 2025

The manipulation of the Rashba effect in low‐dimensional systems is desirable for next generation spintronic devices. Herein, a novel strategy proposed to regulate spin splitting through interfacial interaction Janus WTeSe/InN heterostructures based on first‐principles calculations. Three kinds with different stacking interfaces are constructed, and dependence constant configurations atoms comprehensively investigated. maximum 1.55 eV Å −1 achieved WTeSe/N‐terminated InN heterostructure, representing 193% enhancement compared pristine WTeSe (0.53 ). It found that enhanced related not only net electric field but also interface elements (or coupling). Furthermore, heterostructure regulated by interlayer distances an external field. constants increase 1.95 1.74 at spacing 2.1 under applied −0.3 V , respectively, showing increases 26% 12%. This work paves way modify 2D semiconductors.

Language: Английский

Bi2O2Se Nanoplates for Lateral Memristor Devices DOI
Xi Wan, Xin Wang, Y. Yu

et al.

ACS Applied Nano Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 30, 2025

Language: Английский

Citations

0
Interface engineering for enhanced memristive devices and neuromorphic computing applications DOI Creative Commons
Ming Xiao, Daozhi Shen, Jijie Huang

et al.

International Materials Reviews, Journal Year: 2025, Volume and Issue: unknown

Published: March 3, 2025

Memristors, or memristive devices, have gained substantial attention as valuable building blocks for neuromorphic computing systems. Their dynamic reconfiguration enables simulation of essential analog synaptic and neuronal functionalities, making them promising candidates brain-inspired neural network computing. In recent years, conventional thin film materials low-dimensional nanomaterials been extensively explored in devices the development applications. Despite progress several technical challenges persist, such device-to-device uniformity high device density integration, requiring further improvement at single system level integration. Interface engineering, through careful design physical chemical nature interface two-terminal structure, emerges a method to address these challenges. This review highlights utilization engineering techniques optimize behavior, covering both including 0D quantum dots nanoparticles, 1D nanowire/nanotube, 2D materials, heterostructures nanoscale materials. Two main classes mechanisms involved specifically, electronic ionic modulating are described detail. Recent advancements optical artificial functionalities integration also reviewed. concludes with remaining how would be addressing issues. comprehensive serves guide atomic-scale research, while emphasizing broader potential kinetics enabling various exciting physiochemical properties reconfigurable functionalities.

Language: Английский

Citations

0
Plasma treatment of bismuth-doped MoS2 with excellent supercapacitor performance DOI

Xulong Yuan,

Feng Xu, Yujie Zhao

et al.

Journal of Materials Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Bi doped MoS 2 after plasma treatment exhibits excellent electrochemical properties.

Language: Английский

Citations

0
Towards room-temperature stable topological magnetic semiconductors based on two-dimensional Janus vanadium chalcogenides DOI
Shuo Zhang, Yunfei Zhang, Minghao Jia

et al.

Journal of Materials Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

A spintronic device based on a skyrmion transistor, designed to perform specific functions by encoding “0” and “1” using VXY Janus structures.

Language: Английский

Citations

0
Large Rashba Spin Splitting in Janus WTeSe/InN Heterostructures Through Interfacial Coupling DOI
Yuxiang Zhang, Zongnan Zhang,

Mengyu Liu

et al.

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: May 13, 2025

The manipulation of the Rashba effect in low‐dimensional systems is desirable for next generation spintronic devices. Herein, a novel strategy proposed to regulate spin splitting through interfacial interaction Janus WTeSe/InN heterostructures based on first‐principles calculations. Three kinds with different stacking interfaces are constructed, and dependence constant configurations atoms comprehensively investigated. maximum 1.55 eV Å −1 achieved WTeSe/N‐terminated InN heterostructure, representing 193% enhancement compared pristine WTeSe (0.53 ). It found that enhanced related not only net electric field but also interface elements (or coupling). Furthermore, heterostructure regulated by interlayer distances an external field. constants increase 1.95 1.74 at spacing 2.1 under applied −0.3 V , respectively, showing increases 26% 12%. This work paves way modify 2D semiconductors.

Language: Английский

Citations

0