Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Nanoscale, Год журнала: 2023, Номер 15(32), С. 13239 - 13251

Опубликована: Янв. 1, 2023

Although vertical configurations for high-density storage require challenging process steps, such as etching high aspect ratios and atomic layer deposition (ALD), they are more affordable with a relatively simple lithography have been employed in many studies. Herein, the potential of memristors CMOS-compatible 3D stacked structures Pt/Ti/HfOx/TiN-NCs/HfOx/TiN is examined use neuromorphic systems. The electrical characteristics (including I-V properties, retention, endurance) were investigated both planar single cells resistive random-access memory (VRRAM) at each layer, demonstrating their outstanding non-volatile capabilities. In addition, various synaptic functions potentiation depression) under different pulse schemes, excitatory postsynaptic current (EPSC), spike-timing-dependent plasticity (STDP) investigated. pattern recognition simulations, an improved rate was achieved by linearly changing conductance, which enhanced incremental scheme. results demonstrated feasibility employing VRRAM TiN nanocrystals systems that resemble human brain.

Язык: Английский

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Electro-Optically Tunable Passivated Double-Cation Perovskite-Based ReRAM for Low-Power Memory Applications

ACS Applied Electronic Materials, Год журнала: 2024, Номер 6(4), С. 2709 - 2719

Опубликована: Март 18, 2024

3-D Hybrid halide perovskites (HHPs) have garnered significant interest as a promising contender for next-generation resistive random access memory (ReRAM) technology. However, challenges such variations in cycle-to-cycle switching iterations, operating voltages, and restrained reproducibility arise due to the disproportionate presence of grain size (GS) boundaries (GBs), which are impediments widespread adoption perovskite-based devices commercial applications. Since GBs present thin film act pathways ion/cation migrations that eventually lead formation conducting filament (CF), by regulating GBs, (RS) performance can also be improved. Herein, we initially optimized GS thus HHP incorporation FA+ MAPbI3 prepare double-cation MAFAPbI3 determined doping 10% FAI improved quality with an average ∼209.68 6.65 nm surface roughness, resulting higher led stable RS fabricated Ag/MAFAPbI3/FTO up 491 cycles under dark conditions 245 white light illumination significantly low statistical (σ/μ %) consecutive cycles. This was achieved while maintaining low-resistance states (LRS) high-resistance-states (HRS) ratios, i.e., LRS/HRS ∼15.2 (dark) ∼54.3 (white light) at power consumption ∼0.101 mW. Further, improve LRS/HRS, PEAI passivation layer deposited over (SL) through spin-coating, Ag/PEAI/MAFAPbI3/FTO ReRAM configuration exhibited ∼105 considerably power, 0.12 0.23 mW illumination, respectively. Furthermore, mechanisms were discussed supported electrochemical metallization (ECM) model.

Язык: Английский

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Two-Dimensional Zeolitic Imidazolate Framework Based Optoelectronic Synaptic Transistor

The Journal of Physical Chemistry Letters, Год журнала: 2025, Номер unknown, С. 3012 - 3021

Опубликована: Март 17, 2025

Neuromorphic computing systems that integrate memory and computation offer a solution to the limitations of traditional von Neumann architectures. Optoelectronic synaptic transistors, responding both optical electrical signals, enable multifunctional operation with low power consumption. However, challenges such as short data retention processing efficiency remain. This study presents an optoelectronic transistor utilizing two-dimensional (2D) MoS2, 2D zeolitic imidazolate framework (ZIF) Zn2(bim)4, gold (Au) nanoparticles (NPs) semiconductor, tunneling layer, floating gate materials, respectively. By adjusting layer thickness, charge-blocking capacity Zn2(bim)4 is modulated, improving long-term retention. The properties MoS2 charge-trapping ability Au NPs mimic behaviors postsynaptic current (PSC), potentiation (LTP), transition from short-term (STM-LTM). device can also be integrated into artificial neural network (ANN) for smart healthcare applications, achieving 88.1% accuracy in electrocardiogram classification through dual-mode stimulation.

Язык: Английский

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Natural Biomaterials for Sustainable Flexible Neuromorphic Devices

Biomaterials, Год журнала: 2024, Номер 314, С. 122861 - 122861

Опубликована: Окт. 3, 2024

Язык: Английский

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MoS2-based Quantum Dot Artificial Synapses for Neuromorphic Computing

Materials Today Physics, Год журнала: 2025, Номер unknown, С. 101703 - 101703

Опубликована: Март 1, 2025

Язык: Английский

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Development of Reversed‐Phase HPLC Method for Purity Assessment of Aryl Porphyrins and Their Metal Complexes

Separation Science Plus, Год журнала: 2025, Номер 8(5)

Опубликована: Май 1, 2025

ABSTRACT A gradient reversed‐phase HPLC method was developed for in‐process monitoring of the formation aryl porphyrins and their corresponding metallo‐aryl porphyrins. The also proved effective determining quantitative purity. Optimal results achieving proper peak shape separation peaks in chromatogram were obtained using C8 column acetic acid‐water acetonitrile. detector wavelength selected simultaneous detection starting materials products analysis conversion aldehydes to tetraaryl at 254 nm from porphyrin 413 nm, respectively; while purity could be determined nm. is efficient, versatile, accurate, easy carry out serve as a handy tool reaction determination processes development synthetic metalloporphyrins.

Язык: Английский

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Superlow Power Consumption Memristor Based on Borphyrin–Deoxyribonucleic Acid Composite Films as Artificial Synapse for Neuromorphic Computing

ACS Applied Materials & Interfaces, Год журнала: 2023, Номер 15(42), С. 49390 - 49401

Опубликована: Окт. 10, 2023

Memristor synapses based on green and pollution-free organic materials are expected to facilitate biorealistic neuromorphic computing be an important step toward the next generation of electronics. Metalloporphyrin is compound that widely exists in nature with good biocompatibility stable chemical properties, has already been used fabricate memristors. However, application metalloporphyrin-based memristors as synaptic devices still faces challenges, such realizing a high switching ratio, low power consumption, bidirectional conductance modulation. We developed memristor improves resistive (RS) characteristics Zn(II)meso-tetra(4-carboxyphenyl) porphine (ZnTCPP) by combining it deoxyribonucleic acid (DNA) composite film. The as-fabricated ZnTCPP-DNA-based device showed excellent RS memory sufficiently ratio up ∼104, super consumption ∼39.56 nW, cycling stability, data retention capability. Moreover, modulation can controlled modulating amplitudes, durations, intervals positive negative pulses. was successfully simulate series functions including long-term potentiation, depression, spike time-dependent plasticity, paired-pulse facilitation, excitatory postsynaptic current, human learning behavior, which demonstrates its potential applicability devices. A two-layer artificial neural network demonstrate digit recognition ability device, reached 97.22% after 100 training iterations. These results create new avenue for research development electronics have major implications low-power future.

Язык: Английский

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Continuous flow synthesis of meso-substituted porphyrins with inline UV–Vis analysis

Journal of Flow Chemistry, Год журнала: 2024, Номер 14(1), С. 23 - 31

Опубликована: Янв. 15, 2024

Abstract Porphyrin derivatives have found diverse applications due to their attractive photophysical and catalytic properties, but remain challenging synthesize, particularly at scale. synthesis thus stands benefit from the more controlled environment, opportunities for efficient optimization, potential scale-up available in flow. Here, we transferred Lindsey porphyrin into flow, enabling timing oxidation neutralization steps real time monitoring of reaction mixture with inline UV–Vis analysis. For tetraphenyl (TPP), showed presence protonated TPP, formed residual acid. Thus, allowed optimization step improve yield. Three further substrates were produced flow; two cases, yield UV was significantly higher than post-purification, identifying losses that could be recovered by modifying purification step. The workflow presented here can adapted multiple systematically optimise yield, reducing needed develop scalable routes these valuable compounds.

Язык: Английский

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A novel 5,10,15,20-tetrakis-(4-(triazol-1-yl)phenyl)porphyridine compound: Crystal structure, photophysical properties and TDDFT calculations

Journal of Porphyrins and Phthalocyanines, Год журнала: 2024, Номер 28(03), С. 157 - 165

Опубликована: Март 1, 2024

A novel 5,10,15,20-tetrakis-(4-(triazol-1-yl)phenyl)porphyridine compound, namely, Zn[5,10,15,20-tetrakis-(4-(triazol-1-yl)phenyl)porphyridine] (hereafter tagged as 1) was synthesized through a solvothermal reaction with mixed solvents at 413 K. The X-ray single-crystal structure of compound 1 is featured two-dimensional (2D) layer-like the zinc ion located center 5,10,15,20-tetrakis-(4-(triazol-1-yl)phenyl)porphyridine. macrocycle coplanar. has six coordination and coordinates three porphyridines. photoluminescence spectra DMF solution reveal that it shows upconversion red photoluminescence. time-dependent density functional theory (TDDFT) calculation confirms this originated from MLCT process (metal to ligand charge transfer). CCT (Correlated Color Temperature) 2200 K CIE (Commission Internationale de I’Éclairage) chromaticity coordinate (0.6311, 0.3595) for 1. UV-vis diffuse reflectance curve measured solid state sample reveals possesses 2.75 eV band gap.

Язык: Английский

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Tailoring Conductive MXene@MOF Interfaces: New Generation of Synapse Devices for Neuromorphic Computing

Chemistry of Materials, Год журнала: 2024, Номер 36(17), С. 8466 - 8476

Опубликована: Авг. 19, 2024

Synapse devices, pivotal components in neuromorphic computing, demonstrate unique properties that are essential for advanced computing systems. These characterized by their metal/resistive layer/metal structure, rely heavily on active layer material. One important challenge developing synapse devices artificial neural networks lies constructing these at a hardware level to achieve in-memory enabling the efficient processing of information while minimizing power consumption. Herein, we present rational design and situ synthesis two-dimensional (2D/2D) heteronanostructures intricately integrating Ti-based metal carbide as Ti-MXene (Ti3C2) with copper-based metal–organic framework Cu-tetrakis (4-carboxyphenyl) porphyrin (Cu-TCPP) through van der Waals interactions form hybrid [Ti3C2@Cu-TCPP] (1). The exhibits synergistic both counterparts an intricate hierarchical ensuring exceptional stability remarkable conductivity, fundamental progression devices. resultant hybrids show device comprehensive comparative analysis using DC I–V sweeps was conducted evaluate different types, focusing parameters such high-resistance state, low-resistance on/off ratio. Results demonstrated Ti3C2@Cu-TCPP@PVA-based exhibited impressive ratio approximately 102, outperforming Cu-TCPP@PVA Ti3C2@PVA-based This highlights superior performance Ti3C2@Cu-TCPP@PVA its potential applications network Furthermore, conduction mechanism elucidated, revealing dominance space-charge limited during SET process Schottky emission RESET process.

Язык: Английский

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