Electro-Optically Tunable Passivated Double-Cation Perovskite-Based ReRAM for Low-Power Memory Applications

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: 6(4), P. 2709 - 2719

Published: March 18, 2024

3-D Hybrid halide perovskites (HHPs) have garnered significant interest as a promising contender for next-generation resistive random access memory (ReRAM) technology. However, challenges such variations in cycle-to-cycle switching iterations, operating voltages, and restrained reproducibility arise due to the disproportionate presence of grain size (GS) boundaries (GBs), which are impediments widespread adoption perovskite-based devices commercial applications. Since GBs present thin film act pathways ion/cation migrations that eventually lead formation conducting filament (CF), by regulating GBs, (RS) performance can also be improved. Herein, we initially optimized GS thus HHP incorporation FA+ MAPbI3 prepare double-cation MAFAPbI3 determined doping 10% FAI improved quality with an average ∼209.68 6.65 nm surface roughness, resulting higher led stable RS fabricated Ag/MAFAPbI3/FTO up 491 cycles under dark conditions 245 white light illumination significantly low statistical (σ/μ %) consecutive cycles. This was achieved while maintaining low-resistance states (LRS) high-resistance-states (HRS) ratios, i.e., LRS/HRS ∼15.2 (dark) ∼54.3 (white light) at power consumption ∼0.101 mW. Further, improve LRS/HRS, PEAI passivation layer deposited over (SL) through spin-coating, Ag/PEAI/MAFAPbI3/FTO ReRAM configuration exhibited ∼105 considerably power, 0.12 0.23 mW illumination, respectively. Furthermore, mechanisms were discussed supported electrochemical metallization (ECM) model.

Language: Английский

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Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Nanoscale, Journal Year: 2023, Volume and Issue: 15(32), P. 13239 - 13251

Published: Jan. 1, 2023

Although vertical configurations for high-density storage require challenging process steps, such as etching high aspect ratios and atomic layer deposition (ALD), they are more affordable with a relatively simple lithography have been employed in many studies. Herein, the potential of memristors CMOS-compatible 3D stacked structures Pt/Ti/HfOx/TiN-NCs/HfOx/TiN is examined use neuromorphic systems. The electrical characteristics (including I-V properties, retention, endurance) were investigated both planar single cells resistive random-access memory (VRRAM) at each layer, demonstrating their outstanding non-volatile capabilities. In addition, various synaptic functions potentiation depression) under different pulse schemes, excitatory postsynaptic current (EPSC), spike-timing-dependent plasticity (STDP) investigated. pattern recognition simulations, an improved rate was achieved by linearly changing conductance, which enhanced incremental scheme. results demonstrated feasibility employing VRRAM TiN nanocrystals systems that resemble human brain.

Language: Английский

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Two-Dimensional Zeolitic Imidazolate Framework Based Optoelectronic Synaptic Transistor

The Journal of Physical Chemistry Letters, Journal Year: 2025, Volume and Issue: unknown, P. 3012 - 3021

Published: March 17, 2025

Neuromorphic computing systems that integrate memory and computation offer a solution to the limitations of traditional von Neumann architectures. Optoelectronic synaptic transistors, responding both optical electrical signals, enable multifunctional operation with low power consumption. However, challenges such as short data retention processing efficiency remain. This study presents an optoelectronic transistor utilizing two-dimensional (2D) MoS2, 2D zeolitic imidazolate framework (ZIF) Zn2(bim)4, gold (Au) nanoparticles (NPs) semiconductor, tunneling layer, floating gate materials, respectively. By adjusting layer thickness, charge-blocking capacity Zn2(bim)4 is modulated, improving long-term retention. The properties MoS2 charge-trapping ability Au NPs mimic behaviors postsynaptic current (PSC), potentiation (LTP), transition from short-term (STM-LTM). device can also be integrated into artificial neural network (ANN) for smart healthcare applications, achieving 88.1% accuracy in electrocardiogram classification through dual-mode stimulation.

Language: Английский

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MoS2-based Quantum Dot Artificial Synapses for Neuromorphic Computing

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101703 - 101703

Published: March 1, 2025

Language: Английский

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Development of Reversed‐Phase HPLC Method for Purity Assessment of Aryl Porphyrins and Their Metal Complexes

Separation Science Plus, Journal Year: 2025, Volume and Issue: 8(5)

Published: May 1, 2025

ABSTRACT A gradient reversed‐phase HPLC method was developed for in‐process monitoring of the formation aryl porphyrins and their corresponding metallo‐aryl porphyrins. The also proved effective determining quantitative purity. Optimal results achieving proper peak shape separation peaks in chromatogram were obtained using C8 column acetic acid‐water acetonitrile. detector wavelength selected simultaneous detection starting materials products analysis conversion aldehydes to tetraaryl at 254 nm from porphyrin 413 nm, respectively; while purity could be determined nm. is efficient, versatile, accurate, easy carry out serve as a handy tool reaction determination processes development synthetic metalloporphyrins.

Language: Английский

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Natural Biomaterials for Sustainable Flexible Neuromorphic Devices

Biomaterials, Journal Year: 2024, Volume and Issue: 314, P. 122861 - 122861

Published: Oct. 3, 2024

Language: Английский

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Continuous flow synthesis of meso-substituted porphyrins with inline UV–Vis analysis

Journal of Flow Chemistry, Journal Year: 2024, Volume and Issue: 14(1), P. 23 - 31

Published: Jan. 15, 2024

Abstract Porphyrin derivatives have found diverse applications due to their attractive photophysical and catalytic properties, but remain challenging synthesize, particularly at scale. synthesis thus stands benefit from the more controlled environment, opportunities for efficient optimization, potential scale-up available in flow. Here, we transferred Lindsey porphyrin into flow, enabling timing oxidation neutralization steps real time monitoring of reaction mixture with inline UV–Vis analysis. For tetraphenyl (TPP), showed presence protonated TPP, formed residual acid. Thus, allowed optimization step improve yield. Three further substrates were produced flow; two cases, yield UV was significantly higher than post-purification, identifying losses that could be recovered by modifying purification step. The workflow presented here can adapted multiple systematically optimise yield, reducing needed develop scalable routes these valuable compounds.

Language: Английский

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A novel 5,10,15,20-tetrakis-(4-(triazol-1-yl)phenyl)porphyridine compound: Crystal structure, photophysical properties and TDDFT calculations

Journal of Porphyrins and Phthalocyanines, Journal Year: 2024, Volume and Issue: 28(03), P. 157 - 165

Published: March 1, 2024

A novel 5,10,15,20-tetrakis-(4-(triazol-1-yl)phenyl)porphyridine compound, namely, Zn[5,10,15,20-tetrakis-(4-(triazol-1-yl)phenyl)porphyridine] (hereafter tagged as 1) was synthesized through a solvothermal reaction with mixed solvents at 413 K. The X-ray single-crystal structure of compound 1 is featured two-dimensional (2D) layer-like the zinc ion located center 5,10,15,20-tetrakis-(4-(triazol-1-yl)phenyl)porphyridine. macrocycle coplanar. has six coordination and coordinates three porphyridines. photoluminescence spectra DMF solution reveal that it shows upconversion red photoluminescence. time-dependent density functional theory (TDDFT) calculation confirms this originated from MLCT process (metal to ligand charge transfer). CCT (Correlated Color Temperature) 2200 K CIE (Commission Internationale de I’Éclairage) chromaticity coordinate (0.6311, 0.3595) for 1. UV-vis diffuse reflectance curve measured solid state sample reveals possesses 2.75 eV band gap.

Language: Английский

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Superlow Power Consumption Memristor Based on Borphyrin–Deoxyribonucleic Acid Composite Films as Artificial Synapse for Neuromorphic Computing

ACS Applied Materials & Interfaces, Journal Year: 2023, Volume and Issue: 15(42), P. 49390 - 49401

Published: Oct. 10, 2023

Memristor synapses based on green and pollution-free organic materials are expected to facilitate biorealistic neuromorphic computing be an important step toward the next generation of electronics. Metalloporphyrin is compound that widely exists in nature with good biocompatibility stable chemical properties, has already been used fabricate memristors. However, application metalloporphyrin-based memristors as synaptic devices still faces challenges, such realizing a high switching ratio, low power consumption, bidirectional conductance modulation. We developed memristor improves resistive (RS) characteristics Zn(II)meso-tetra(4-carboxyphenyl) porphine (ZnTCPP) by combining it deoxyribonucleic acid (DNA) composite film. The as-fabricated ZnTCPP-DNA-based device showed excellent RS memory sufficiently ratio up ∼104, super consumption ∼39.56 nW, cycling stability, data retention capability. Moreover, modulation can controlled modulating amplitudes, durations, intervals positive negative pulses. was successfully simulate series functions including long-term potentiation, depression, spike time-dependent plasticity, paired-pulse facilitation, excitatory postsynaptic current, human learning behavior, which demonstrates its potential applicability devices. A two-layer artificial neural network demonstrate digit recognition ability device, reached 97.22% after 100 training iterations. These results create new avenue for research development electronics have major implications low-power future.

Language: Английский

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Increased Static Charge‐Induced Threshold Voltage Shifts and Memristor Activity in Pentacene OFETs Comprising Polystyrene‐Based Gate Dielectrics Containing Electroactive Small Molecule Crystallites

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 18, 2024

Abstract Top‐contact bottom‐gate pentacene OFETs are fabricated with single layer dielectrics comprised of either polystyrene (PS), poly(4‐methylstyrene) (P4MS), or poly(4‐tert‐butylstyrene) (P4TBS). The polystyrenes blended varying concentrations two different small molecules, dibenzotetrathiafulvalene (DBTTF) and 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene (diF‐TES‐ADT), to form small, separated crystallites contained throughout the polymer dielectric layer. OFET characteristics these devices investigated their threshold voltage shifts measured after −70 V static charging for 5 min. Two‐terminal measurements conducted using multiple gate biases in range −50 +50 investigate memristor behavior devices. containing DBTTF exhibited ΔV th increases as large 330% relative control no DBTTF, while at least 7.5 wt.% activity, currents ranging from 20 nA 44 µA depending on applied bias. This work demonstrates that including enhances charge storage ability can be promising creating nonbinary memory data processing. Additionally, observed activity indicates this used development neuromorphic systems aim mimic synaptic human nervous system.

Language: Английский

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