Mixed-Dimensional PtSe₂/Bi₂Te₃/Pyramid Si Heterojunction with a Light-Trapping Structure for Highly Sensitive Ultrabroadband Photodetection

ACS Photonics, Год журнала: 2024, Номер 11(5), С. 2070 - 2076

Опубликована: Апрель 18, 2024

Broadband photodetectors have garnered widespread attention in the realm of modern optoelectronic devices and systems due to their pivotal role various applications. Topological insulators emerged as promising candidates for broadband photodetection by leveraging distinct electrical optoelectrical properties. Here, we report successful fabrication a topological insulator Bi2Te3/pyramidal Si heterojunction, incorporating top two-dimensional PtSe2 layer highly sensitive image sensing. Owing light trapping structure pyramidal broad absorption spectrum mixed-dimensional hybrid structure, photodetector exhibits self-powered ultrabroadband response range spanning 265 nm 10.6 μm, with responsivity up 620 mW/A, specific detectivity 1.37 × 1012 cm Hz1/2 W–1, fast speed 0.45/18 μs. Additionally, integrated PtSe2/Bi2Te3/pyramid detector array has demonstrated exceptional imaging capabilities. This study provides feasible pathway realizing

Язык: Английский

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Defect-induced persistent photoconductivity and nonvolatility in two-dimensional Bi2Se3 thin film for neuromorphic vision sensing capability

Journal of Colloid and Interface Science, Год журнала: 2025, Номер 689, С. 137252 - 137252

Опубликована: Март 6, 2025

Язык: Английский

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PtSe₂/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection

Advanced Optical Materials, Год журнала: 2024, Номер 12(29)

Опубликована: Июнь 21, 2024

Abstract Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance. The strong light‐matter interaction other intriguing physical mechanisms (such as high mobility, dangling‐bond‐free surface) in 2D semiconductor materials, combined with the flexible fabrication of device structures, create new opportunities for optoelectronic devices. Here, a self‐powered NIR Schottky junction photodetector is demonstrated by vertically stacking PtSe 2 film atop an InP wafer. built‐in electric field formed at /InP interface endows operation ultralow dark current 45 pA room temperature under 0 V bias. responsivity detectivity 940 nm illumination reach up 0.718 A W −1 4.37 × 10 12 Jones, respectively. Furthermore, TCAD simulations showed that significant pivotal its detection Remarkably, achieves I light /I ratio exceeding 5 fast response time 4.35/5.66 µs, sensitivity polarization. This study provides perspective integration hybrid 3D semiconductors next‐generation devices integrated systems.

Язык: Английский

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Mixed‐Dimensional 2D PtSe₂/3D a‐Ga₂O₃ Heterojunction for Self‐Driven Broadband Photodetector with High Responsivity in UV Region

physica status solidi (a), Год журнала: 2024, Номер unknown

Опубликована: Апрель 28, 2024

Self‐driven broadband photodetectors have wide applications in the fields of biomedicine, remote sensing, rescue, and mineral exploration with advantages energy conservation multiband detection. However, most present are suffering from a fast degradation photoresponsivity ultraviolet (UV) region. To resolve it, self‐driven photodetector is proposed based on mixed‐dimensional 2D PtSe 2 /3D amorphous Ga O 3 (a‐Ga ) heterojunction considering high UV responsivity a‐Ga thin film. obtained film by simple selenization method directly. The completed device region about 14 172 times higher than that visible NIR regions, respectively. In addition, benefiting excellent built‐in electric field at carrier mobility , photogenerated electron–hole pairs can be rapidly separated. As result, its rise time (9.36 ms) decay (11.27 much faster those current ‐based (≈100–1000 ms). This work provides novel building block via facile strategy for further development high‐performance, low‐cost, energy‐efficient photodetectors.

Язык: Английский

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Investigation of In2SexOy/In2Se3/Si dual-junction photodiode for self-powered broadband photodetection

Applied Physics Letters, Год журнала: 2024, Номер 124(3)

Опубликована: Янв. 15, 2024

We report a dual-junction strategy for fabricating high-performance In2SexOy/In2Se3/Si heterojunction photodiode by oxidizing the epitaxial In2Se3 thin films. The device exhibits suppressed dark current (4.2 × 10−11 A) and enhanced photocurrent at zero bias, benefiting from double built-in electric fields. Consequently, it demonstrates excellent uniform self-powered broadband (255–1050 nm) photodetection performance with typical responsivity of several hundred mA/W, detectivity over 5 1011 Jones. Moreover, fast response speed time 0.20 ms is achieved. Our investigation offers potential route to construct full-spectrum photodetectors.

Язык: Английский

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Modulation of oxygen vacancies in InSnZnO thin films and applications for high-speed metal-semiconductor-metal ultraviolet photodetectors

Applied Surface Science, Год журнала: 2024, Номер 669, С. 160586 - 160586

Опубликована: Июнь 23, 2024

Язык: Английский

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Metamaterials for high-performance smart sensors

Applied Physics Reviews, Год журнала: 2024, Номер 11(4)

Опубликована: Дек. 1, 2024

In recent years, metamaterials have shown great potential in various fields such as optics, acoustics, and electromagnetics. Sensors based on been gradually applied daily production, life, military. Metamaterials are artificial materials with unique properties that ordinary do not possess. Through clever microstructure design, they can achieve different demonstrated significant areas like holographic projection, absorbing materials, super-resolution microscopy. devices convert external environmental changes into recognizable signals, playing a crucial role healthcare, industry, Therefore, the development of sensors high sensitivity, low detection limit, wide range, easy integration is significance. only these improvements but also offer advantages anti-interference stealth sensing, which traditional lack. These enhancements new features for sensor field's development. This article summarizes benefits metamaterial terms increased expanded ease system integration. It systematically discusses their applications biomedical gas sensing. The focus trends metamaterial-based future human providing systematic guidance advancement.

Язык: Английский

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High-performance 405-nm photodetector based on the defect-induced absorption in the rutile GeO2 film

Solid State Communications, Год журнала: 2025, Номер unknown, С. 115856 - 115856

Опубликована: Янв. 1, 2025

Язык: Английский

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Nano-Interface Charge Transfer in Ga₂O₃@(Co, Ni)S₂ Heterojunction Ultraviolet Photodetectors

ACS Applied Nano Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 5, 2025

Язык: Английский

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High-performance, reliable and self-powered solar-blind photodetectors based on GQDs/α-Ga2O3 heterojunctions

Surfaces and Interfaces, Год журнала: 2025, Номер unknown, С. 106122 - 106122

Опубликована: Фев. 1, 2025

Язык: Английский

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