M4X3 MXenes: Application in Energy Storage Devices

Nano-Micro Letters, Год журнала: 2024, Номер 16(1)

Опубликована: Июнь 14, 2024

Abstract MXene has garnered widespread recognition in the scientific community due to its remarkable properties, including excellent thermal stability, high conductivity, good hydrophilicity and dispersibility, easy processability, tunable surface admirable flexibility. MXenes have been categorized into different families based on number of M X layers n+1 n , such as 2 X, 3 4 and, recently, 5 . Among these families, particularly Ti C greatly explored while limited studies given synthesis. Meanwhile, family developed hence, demanding a compilation evaluated studies. Herein, this review provides systematic overview latest advancements MXenes, focusing their properties applications energy storage devices. The objective is provide guidance researchers fostering MXene-based nanomaterials, not only for devices but also broader applications.

Язык: Английский

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Near‐Perfect Standard Ternary Inverter Based on MoTe₂ Homojunction Anti‐Ambipolar Transistor

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 21, 2025

Abstract Ternary inverters offer a promising solution to enhance information processing density and efficiency while reducing system complexity, addressing energy limitations in complementary metal‐oxide‐semiconductor technology the post‐Moore era. Among these, standard ternary inverter (STI) is particularly appealing due its symmetry reliability logic operations, though fabrication remains challenging. Here, controllable process‐compatible doping technique reported that combines rapid thermal annealing with h‐BN‐assisted ultraviolet photoinduced achieve area‐selective p‐type n‐type on single MoTe 2 flake. This approach enables of high‐performance anti‐ambipolar transistors (AATs) unipolar field‐effect (FETs) based homojunctions. By achieving near‐perfect conductance matching between connected AATs FETs, an STI highly uniform staircase transfer characteristic intermediate state width precisely one‐third input voltage range demonstrated. The also exhibit peak‐to‐valley ratio exceeding 10 3 , transconductance reversal, tunable peak positions, enabling development frequency doublers without additional bias. study presents novel strategy for efficient multifunctional device fabrication, advancing next‐generation electronic technologies.

Язык: Английский

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Magnetoresistance in 2D Magnetic Materials: From Fundamentals to Applications

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 28, 2025

Abstract Magnetoresistance effects, such as tunnel magnetoresistance and giant magnetoresistance, play pivotal roles in spintronics, where the coupling between spin current affects electrical resistance. These effects are fundamental for various applications, including high‐density information storage, signal transmission, processing. With growing demand magnetoresistance‐based modern devices post‐Moore era, researchers now focusing on developing using 2D magnetic materials. materials offer several advantages, a unique layered structure, high integration density, tunable room‐temperature ferromagnetism, intriguing magnetoresistive properties. This review starts with brief introduction to their typical synthesis routes, followed by preview of some classifications In particular, different applications spintronics critically discussed. Finally, challenges prospects this emerging field suggested. work highlights importance effect advancing technology, offering vital many fields ranging from memory neuromorphic computing.

Язык: Английский

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The Rise of Xene Hybrids

Advanced Materials, Год журнала: 2024, Номер 36(33)

Опубликована: Июнь 20, 2024

Abstract Xenes, mono‐elemental atomic sheets, exhibit Dirac/Dirac‐like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and carbides/nitrides/carbonitrides, it enables them unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, wettability. For example, BN acts an anti‐oxidative shield, MoS 2 injects electrons upon laser excitation, MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, inter‐layer coupling controlled by parameters, achieving scalability reproducibility in hybridization is crucial for implementing these consumer applications. However, realizing the full potential of hybrid faces challenges air gaps, uneven interfaces, formation defects functional groups. Advanced synthesis techniques, a deep understanding behaviors, control over interfacial interactions, awareness cross‐correlations among factors are essential. Xene‐based hybrids show immense promise groundbreaking applications computing, flexible electronics, energy storage, catalysis. In this timely perspective, recent discoveries novel Xenes their highlighted, emphasizing correlations synthetic structure, It anticipated that insights will revolutionize diverse industries technologies.

Язык: Английский

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Opportunities and challenges in the application of electrodeposition to few layer transition metal dichalcogenide electronic device fabrication

Current Opinion in Electrochemistry, Год журнала: 2025, Номер unknown, С. 101651 - 101651

Опубликована: Янв. 1, 2025

Язык: Английский

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Spintronic Devices upon 2D Magnetic Materials and Heterojunctions

ACS Nano, Год журнала: 2025, Номер unknown

Опубликована: Март 7, 2025

In spintronics, there has been increasing interest in two-dimensional (2D) magnetic materials. The well-defined layered crystalline structure, interface conditions, and van der Waals stacking of these materials offer advantages for the development high-performance spintronic devices. Spin–orbit torque (SOT) devices tunneling magnetoresistance (TMR) effect based on have emerged as prominent research areas. SOT utilizing 2D can efficiently achieve SOT-driven magnetization switching by modulating interaction between spin orbital degrees freedom. Notably, crystal structure symmetry breaking heterojunctions leads to field-free perpendicular an extremely low current density down 106 A/cm2. This review provides a comprehensive overview construction, measurement, mechanisms heterojunctions. TMR observed also exhibits significant potential various applications. Specifically, spin-filter A-type antiferromagnets led giant ratios approaching 19,000%. Here, we physical underlying effect, along with design such tunnel junctions (MTJ) valves. summarizes different structural types key factors that enhance values. These advanced show promising prospects fields storage. We highlight advancements integration SOT, MTJ, valve devices, which high-density storage capability, low-power computing, fast data transmission rates Magnetic Random Access Memory logic integrated circuits. are expected revolutionize future developments information technology.

Язык: Английский

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Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se_xTe_1–x Nanosheets for p-Type Transistors and Inverters

ACS Nano, Год журнала: 2024, Номер 18(26), С. 17293 - 17303

Опубликована: Июнь 17, 2024

Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to high leakage current and low on/off ratio. Although alloying Te with selenium (Se) can tune bandgap, thermally evaporated SexTe1–x thin films often suffer from grain boundaries high-density defects. Herein, we introduce precursor-confined chemical vapor deposition (CVD) method synthesizing single-crystalline alloy nanosheets. These nanosheets, tunable compositions, are ideal high-performance field-effect transistors (FETs) 2D inverters. The preformation of Se–Te frameworks in our developed CVD plays critical role the growth nanosheets crystallinity. Optimizing Se composition resulted Se0.30Te0.70 nanosheet-based FET large ratio 4 × 105 room-temperature hole mobility 120 cm2·V–1·s–1, being eight times higher than similar thickness. Moreover, successfully fabricated an inverter based on n-type MoS2 demonstrating typical voltage transfer curve gain 30 at operation Vdd = 3 V.

Язык: Английский

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Electron Transport over 2D Molecular Materials and Assemblies

Accounts of Chemical Research, Год журнала: 2024, Номер 57(18), С. 2665 - 2677

Опубликована: Авг. 20, 2024

ConspectusTwo-dimensional (2D) molecular materials, in which the major interactions are confined 2D planes with contrasted force fields acting between planes, have been key electronic functional materials since past decade. Even without referring to functionals of graphene-based systems, conjugated systems expected show extrawide dynamic ranges density states (DOS) tuning, effective electron mass, mobility, and conductivity. A advantage is their compatibility ubiquitous devices designed using planar structures, such as transistors memories, associated utility active materials. The mobility electrons utility, various optimize mobility. This Account begins an introduction for assessment: noncontact time-resolved microwave conductivity (TRMC) measurements a technique probe differential upon transient charge carrier injection into Electronic transport over graphenes, covalent organic frameworks (COFs), metal–organic (MOFs) discussed special emphasis on building blocks, fine-tuning conducting species linkages, topology framework, controlling doping. superiority β-ketoenamine-linked COF imine-linked films dominant in-plane out-of-plane also illustrated. Systematic engineering blocks COFs varying degrees donor–acceptor (D–A) conjugation, torsional angles, reaction conditions resulted modulation efficiency generation/transport well exciton migration. advantages finally terms interplaying spatial arrangements molecules substantial role intermolecular stabilizing condensed phases. strong correlation dispersion hierarchical sheds light way overcome structural fluctuation optimization point singularity at distance d ∼ 0.3 nm deduced from overall assessment phases molecules, suggesting roles coupling: new concept conjugation. Exceptional coupling relatively high was observed, particularly chiral contrast 3D analogues, where reduction gravitational condensates impacting DOS: Wallach's rule. candidates violation long-lasting rule DOS.

Язык: Английский

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Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Nano-Micro Letters, Год журнала: 2024, Номер 16(1)

Опубликована: Авг. 9, 2024

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring dimension and performance limits transistors based on TMDs has gained substantial importance. review provides a comprehensive investigation into these single 2D-TMD transistor. It delves impacts miniaturization, including reduction channel length, gate source/drain contact dielectric thickness transistor operation performance. In addition, this detailed analysis parameters such as resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, development p-type logic transistors. details two logical expressions transistor, current voltage. also emphasizes role TMD-based memory devices, focusing enhancing speed, endurance, data retention, extinction well reducing energy consumption functioning artificial synapses. demonstrates calculating methods dynamic synaptic devices. not only summarizes state art field but highlights potential future research directions applications. underscores anticipated challenges, opportunities, solutions navigating boundaries

Язык: Английский

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Low-temperature sinterability of graphene-Cu nanoparticles:Molecular dynamics simulations and experimental verification

Applied Surface Science, Год журнала: 2024, Номер 682, С. 161683 - 161683

Опубликована: Ноя. 1, 2024

Язык: Английский

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