2D materials-based crossbar array for neuromorphic computing hardware DOI Creative Commons
Hyeon Ji Lee, S.-M. Park, J.H. Kim

и другие.

Neuromorphic Computing and Engineering, Год журнала: 2024, Номер 4(3), С. 032003 - 032003

Опубликована: Сен. 1, 2024

Abstract The growing demand for artificial intelligence has faced challenges traditional computing architectures. As a result, neuromorphic systems have emerged as possible candidates next-generation systems. Two-dimensional (2D) materials-based devices that emulate biological synapses and neurons play key role in hardware due to their unique properties such high strength, thermal conductivity, flexibility. Although several studies shown the simulations of individual devices, experimental implementation large-scale crossbar arrays is still unclear. In this review, we explore working principles mechanisms memristive devices. Then, overview development based on 2D materials including transition metal dichalcogenides, graphene, hexagonal boron nitride, layered halide perovskites. We also highlight requirement recent progress building by utilizing advantageous materials. Lastly, address currently face propose path towards system-level applications computing.

Язык: Английский

Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications DOI Creative Commons
Yilin Sun,

Huaipeng Wang,

Dan Xie

и другие.

Nano-Micro Letters, Год журнала: 2024, Номер 16(1)

Опубликована: Июнь 6, 2024

Abstract Manipulating the expression of synaptic plasticity neuromorphic devices provides fascinating opportunities to develop hardware platforms for artificial intelligence. However, great efforts have been devoted exploring biomimetic mechanisms simulation in last few years. Recent progress various modulation techniques has pushed research electronics from static dynamic modulation, improving accuracy computing and providing strategies implementing sensing functions. Herein, several through chemical techniques, device structure design, physical signal are reviewed. For underlying modification functional materials were clarified its effect on was also highlighted. Based reconfigurable operation well demonstrated achieve programmable Besides, integrating sensory units with processing circuits paved a new way human-like intelligent perception under signals such as light, strain, temperature. Finally, considering that relevant technology is still basic exploration stage, some prospects or development suggestions put forward promote devices.

Язык: Английский

Процитировано

18

2D materials-memristive devices nexus: From status quo to Impending applications DOI Creative Commons
Muhammad Muqeet Rehman, Yarjan Abdul Samad, Jahan Zeb Gul

и другие.

Progress in Materials Science, Год журнала: 2025, Номер unknown, С. 101471 - 101471

Опубликована: Фев. 1, 2025

Язык: Английский

Процитировано

2

Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors DOI
Yuanyuan Zhu, Yufei Zhang,

Shuning Yang

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(1)

Опубликована: Янв. 6, 2025

Hafnium oxide (HfOx) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS technology, and high dielectric constant. However, the low reliability of HfOx-based is key factor hindering widespread practical applications. Herein, amorphous HfOx (a-HfOx) used construct memristors, nitrogen treatment strategy employed enhance characteristics. All fabricated Al/a-HfOx/ITO demonstrate bipolar digital RS behaviors, specifically, 500 °C-treated a-HfOx device exhibits reliable performance, including cycle-to-cycle variability, concentrated distributions operating voltages, long-term retention capacity (>104 s), good cycle endurance (>200 cycles). The mechanisms physical models for enhanced performance thoroughly elucidated, revealing that formation stable oxygen vacancy–dinitrogen complexes confines conductive filament path significantly reduces randomness during rupture. This work renders an effective material engineering widening a toward designing data storage devices striking performances.

Язык: Английский

Процитировано

1

Bionic Recognition Technologies Inspired by Biological Mechanosensory Systems DOI Open Access
Xiangxiang Zhang, Chang-Guang Wang, Xin Pi

и другие.

Advanced Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 21, 2025

Abstract Mechanical information is a medium for perceptual interaction and health monitoring of organisms or intelligent mechanical equipment, including force, vibration, sound, flow. Researchers are increasingly deploying recognition technologies (MIRT) that integrate acquisition, pre‐processing, processing functions expected to enable advanced applications. However, this also poses significant challenges acquisition performance efficiency. The novel exciting mechanosensory systems in nature have inspired us develop superior bionic (MIBRT) based on materials, structures, devices address these challenges. Herein, first strategies pre‐processing presented their importance high‐performance highlighted. Subsequently, design considerations sensors by mechanoreceptors described. Then, the concepts neuromorphic summarized order replicate biological nervous system. Additionally, ability MIBRT investigated recognize basic information. Furthermore, further potential applications robots, healthcare, virtual reality explored with view solve range complex tasks. Finally, future opportunities identified from multiple perspectives.

Язык: Английский

Процитировано

1

MXene‐Based Flexible Memory and Neuromorphic Devices DOI Creative Commons
Yan Li,

Guanglong Ding,

Yongbiao Zhai

и другие.

Small, Год журнала: 2025, Номер unknown

Опубликована: Янв. 31, 2025

As the age of Internet Things (IoTs) unfolds, along with rapid advancement artificial intelligence (AI), traditional von Neumann-based computing systems encounter significant challenges in handling vast amounts data storage and processing. Bioinspired neuromorphic strategies offer a promising solution, characterized by features in-memory computing, massively parallel processing, event-driven operations. Compared to rigid silicon-based devices, flexible devices are lightweight, thin, highly stretchable, garnering considerable attention. Among materials utilized these transition metal carbides/nitrides (MXenes) particularly noteworthy their excellent flexibility, exceptional conductivity, hydrophilicity, which confer remarkable properties upon devices. Herein, comprehensive discussion is provided on applications MXenes memory This review covers basic principles device structures common parameters emerging as well synthesis, functionalization methods, distinct MXenes. The remaining future opportunities relevant also presented. can serve valuable reference lay cornerstone for practical feasible implementation technologies.

Язык: Английский

Процитировано

1

Electrical-Light Coordinately Modulated Synaptic Memristor Based on Ti3C2 MXene for Near-Infrared Artificial Vision Applications DOI

Langchun Yue,

Hao Sun,

Yirun Zhu

и другие.

The Journal of Physical Chemistry Letters, Год журнала: 2024, Номер 15(34), С. 8667 - 8675

Опубликована: Авг. 19, 2024

Emerging optoelectronic memristive devices with high parallelism and low-power consumption have made neuromorphic computing hardware a tangible reality. The coordination of conductivity regulation through both electrical light signals is pivotal for advancing the development synaptic memristors brainlike functionalities. Here, an artificial visual synapse presented Ti3C2 MXene memristor which demonstrates not only nonvolatile memory effect (Set/Reset: 0.58/–0.55 V; Retention: >103 s) sustained multistage conductivity, but also facile modulation electrical- light-stimulated behaviors. By adjusting stimulus parameters, enables realization biosynaptic excitatory postsynaptic current, stable long-term facilitation/depression, paired pulse facilitation, spiking-timing-dependent plasticity, experiential learning. Particularly, benefiting from distinguishable photoconductive effects multiple near-infrared intensities (7–13 mW/cm2), potential applications in nociceptive perception ("threshold", "noadaption", "relaxation") imaging (e.g., "Superman" cartoon character) infrared environments are well achieved such memristors. These results hold significant implications future advancement integrated sensing, memory, nociception, systems.

Язык: Английский

Процитировано

5

Chelated Tin Halide Perovskite for Near-Infrared Neuromorphic Imaging Array Enabling Object Recognition and Motion Perception DOI Creative Commons
Xiangyue Meng, Tianhua Liu,

Ziquan Yuan

и другие.

Research Square (Research Square), Год журнала: 2025, Номер unknown

Опубликована: Янв. 6, 2025

Abstract Novel neuromorphic imaging arrays integrate photonic perception, memory, and process capability, enabling intelligent with efficient spatial temporal data fusion for object recognition, enhancement, motion perception in autonomous vehicles surveillance systems, surpassing the limitations of conventional charge-coupled device (CCD) complementary metal oxide semiconductor (CMOS) image sensors. Halide perovskites hold significant promise due to their capacity simultaneously manipulate photogenerated ions electronic charges, thereby facilitating development sophisticated systems based on intrinsic material dynamics. However, limited response range (ultraviolet-visible spectrum) toxic nature lead remain unresolved perovskite-based applications. Here, we present lead-free non-toxic CH(NH2)2SnI3 (FASnI3) low-toxicity components, excellent optoelectronic properties, superior near-infrared by multi-site chelate effect bio-friendly quercetin (QR) molecules. Coupled mechanism non-equilibrium carrier strategy, (NIR) synapse FASnI3-QR perovskite films exhibited key synaptic characteristics practical applications, including quasi-linear time-dependent photocurrent generation, prolonged decay, low energy consumption. Ultimately, 12×12 real-time NIR array was successfully constructed thin-film transistor (TFT) backplanes through heterogeneous integration devices Si circuits, which enables spatiotemporal information complex environments at hardware level.

Язык: Английский

Процитировано

0

Contact‐Engineered Oxide Memtransistors for Homeostasis‐Based High‐Linearity and Precision Neuromorphic Computing DOI Open Access

San Nam,

Dong Hyun Kang,

Seong‐Pil Jeon

и другие.

Small, Год журнала: 2025, Номер unknown

Опубликована: Янв. 5, 2025

Abstract Homeostasis is essential in biological neural networks, optimizing information processing and experience‐dependent learning by maintaining the balance of neuronal activity. However, conventional two‐terminal memristors have limitations implementing homeostatic functions due to absence global regulation ability. Here, three‐terminal oxide memtransistor‐based synapses are demonstrated perform highly linear synaptic weight update enhanced accuracy neuromorphic computing. Particularly, leveraging gate control contact‐engineered indium‐gallium‐zinc‐oxide (IGZO) memtransistor, scaling enabled for high‐linearity precision Moreover, sinusoidal voltage demonstrated, possibly enabling emulation higher‐order functions. The device structure IGZO memtransistor optimized regarding source/drain electrode materials an interfacial layer inserted between channel source electrode. As a result, memtransistors exhibiting high current switching ratio >10 4 reliable endurance characteristics obtained. Furthermore, through adaptation scaling, emulating homeostasis, non‐linearity values 0.01 −0.01 achieved potentiation depression, respectively, recognition 91.77% digit images. It envisioned that hold significant promise homeostasis computing linearity efficiency.

Язык: Английский

Процитировано

0

Time‐Multiplexed Reservoir Computing with Quantum‐Dot Lasers: Impact of Charge‐Carrier Scattering Timescale DOI Creative Commons
Huifang Dong, Lina Jaurigue, Kathy Lüdge

и другие.

physica status solidi (RRL) - Rapid Research Letters, Год журнала: 2025, Номер unknown

Опубликована: Фев. 3, 2025

Reservoir computing with optical devices offers an energy‐efficient approach for time‐series forecasting. Quantum dot lasers feedback are modeled in this article to explore the extent which increased complexity charge‐carrier dynamics within nanostructured semiconductor can enhance prediction performance. By tuning scattering interactions, laser's and response time be finely adjusted, allowing a systematic investigation. It is found that both system task requirements need considered find optimal operation conditions. Further, pronounced relaxation oscillations outperform those strongly damped dynamics, even if underlying more complex. This demonstrates reservoir performance relies not only on high internal phase space dimension but also effective utilization of these through output sampling process, quantum laser, computing, delay, rate, oscillation.

Язык: Английский

Процитировано

0

Zero-Power, High-Frequency Floating Memristor Emulator Circuit and Its Applications DOI Creative Commons

Imen Barraj,

Amel Neifar,

Hassen Mestiri

и другие.

Micromachines, Год журнала: 2025, Номер 16(3), С. 269 - 269

Опубликована: Фев. 26, 2025

This paper presents a novel passive floating memristor emulator that operates without an external DC bias, leveraging the DTMOS technique. The design comprises only four MOSFETs and eliminates need for capacitors. achieves high operating frequency of around 250 MHz consumes zero static power. A comprehensive analysis simulation, conducted using 180 nm CMOS technology, validates circuit’s performance. versatility effectiveness proposed are demonstrated through its application in various circuits, including logic gates, ring oscillator, analog filters, highlighting potential diverse low-power, high-frequency applications. provides compact, efficient, integrable solution nanoelectronic circuit designs.

Язык: Английский

Процитировано

0