Advanced Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Дек. 8, 2024
Abstract
2D‐layered
materials
are
recognized
as
up‐and‐coming
candidates
to
overcome
the
intrinsic
physical
limitation
of
silicon‐based
devices.
Herein,
coexistence
positive
persistent
photoconductivity
(PPPC)
and
negative
(NPPC)
in
SnSe
thin
films
prepared
by
pulsed
laser
deposition
provides
an
excellent
avenue
for
engineering
novel
It
is
determined
that
surface
oxygen
co‐regulated
physisorption
chemisorption,
NPPC
attributed
photo‐controllable
desorption
behavior.
The
dominant
behavior
chemisorption
induces
high
stability,
while
room
adjusting
NPPC.
A
simple
fully
light‐modulated
artificial
synaptic
device
based
on
film
constructed
operate
various
plasticity
reversible
modulation
conductance
applying
430
255
nm
illuminations.
three‐layer
neural
network
structure
with
a
accuracy
95.33%
recognize
handwritten
digital
images
implemented
device.
Furthermore,
pressure‐related
cognition
response
humans
climbing
foraging
recognition
behaviors
anemonefish
mimicked.
This
work
demonstrates
potential
developing
neuromorphic
computing
simulating
biological
without
additional
treatment.
one‐step
method
preparation
highly
adaptable
expected
realize
large‐area
growth
integration
SnSe‐based
Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Апрель 24, 2025
Abstract
This
study
explores
the
application
of
incremental
step
pulse
with
verify
algorithm
(ISPVA)
scheme
in
Pt/TiO
X
/TiN
vertical
resistive
random‐access
memory
(VRRAM)
devices
to
enhance
both
reliability
and
controllability
switching.
ISPVA
improves
linearity
symmetry
switching,
enabling
accurate
representation
up
6‐bit
states
ensuring
precise
transitions
between
low
high
resistance
states.
Additionally,
ensures
consistent
current
across
different
layers,
thereby
improving
electrical
response
uniformity
enhancing
performance
multilayer
structures
for
high‐density
applications.
These
improvements
provide
a
stable
window
guarantee
device's
endurance
1000
cycles.
further
demonstrates
implementation
various
synaptic
functions,
including
spike‐time‐dependent
plasticity
(STDP),
spike‐number‐dependent
(SNDP),
spike‐amplitude‐dependent
(SADP),
spike‐duration‐dependent
(SDDP),
spike‐rate‐dependent
(SRDP).
The
findings
also
demonstrate
that
nociceptive
Pavlovian
characteristics
can
be
achieved
on‐receptor
computing
associative
learning.
By
integrating
advanced
fabrication
techniques,
VRRAM
effectively
address
challenges
such
as
device‐to‐device
variability
stochastic
properties,
establishing
new
benchmark
next‐generation
technologies.
Nano-Micro Letters,
Год журнала:
2024,
Номер
17(1)
Опубликована: Ноя. 13, 2024
Abstract
Spike-based
neural
networks,
which
use
spikes
or
action
potentials
to
represent
information,
have
gained
a
lot
of
attention
because
their
high
energy
efficiency
and
low
power
consumption.
To
fully
leverage
its
advantages,
converting
the
external
analog
signals
is
an
essential
prerequisite.
Conventional
approaches
including
analog-to-digital
converters
ring
oscillators,
sensors
suffer
from
area
costs.
Recent
efforts
are
devoted
constructing
artificial
sensory
neurons
based
on
emerging
devices
inspired
by
biological
system.
They
can
simultaneously
perform
sensing
spike
conversion,
overcoming
deficiencies
traditional
systems.
This
review
summarizes
benchmarks
recent
progress
neurons.
It
starts
with
presentation
various
mechanisms
signal
transduction,
followed
systematic
introduction
employed
for
Furthermore,
implementations
different
perceptual
capabilities
briefly
outlined
key
metrics
potential
applications
also
provided.
Finally,
we
highlight
challenges
perspectives
future
development
Advanced Electronic Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Дек. 30, 2024
Abstract
Neuromorphic
hardware
with
dynamic
synaptic
plasticity
presents
fascinating
applications
in
advanced
artificial
intelligence.
However,
the
development
of
low‐cost,
CMOS
(Complementary
Metal‐Oxide‐Semiconductor)‐compatible,
and
dynamically
tunable
devices
is
still
nascent.
Notably,
spontaneous
polarization
hafnium
oxide‐based
ferroelectric
materials,
combined
persistent
photoconductivity
effect
indium‐gallium‐zinc‐oxide
(IGZO)
semiconductors,
provide
a
potential
solution.
In
this
paper,
novel
optoelectronic
device
based
on
thin‐film
transistors
(FeTFTs)
proposed
to
achieve
through
co‐modulation
light
electrical
signals,
which
can
effectively
adjust
range
weights
emulate
complex
biological
behaviors.
The
effective
FeTFTs
quantified
under
different
power
intensities
verified
emulation
behavior,
such
as
classical
conditioning
experiments
environmental
adaptive
behavior.
Furthermore,
3
×
FeTFT
array
constructed
demonstrate
its
memory
functions.
This
CMOS‐compatible
provides
robust
foundation
for
future
intelligence,
enabling
it
adapt
more
environments
perform
tasks
efficiently.
Advanced Electronic Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Окт. 9, 2024
Abstract
Due
to
the
imitation
of
neural
functionalities
human
brain
via
optical
modulation
resistance
states,
photoelectric
resistive
random
access
memory
(ReRAM)
devices
attract
extensive
attraction
for
synaptic
electronics
and
in‐memory
computing
applications.
In
this
work,
a
ReRAM
(PSR)
structure
ITO/Zn
2
SnO
4
/Ga
O
3
/ITO/glass
with
simple
fabrication
process
is
reported
imitate
plasticity.
Electrically
induced
long‐term
potentiation/depression
(LTP/D)
behavior
indicates
fulfillment
fundamental
requirement
artificial
neuron
devices.
Classification
three‐channeled
images
corrupted
different
levels
(0.15–0.9)
Gaussian
noise
achieved
by
simulating
convolutional
network
(CNN).
The
violet
light
(405
nm)
illumination
generates
excitatory
post
current
(EPSC),
which
influenced
persistent
photoconductivity
(PPC)
effect
after
discontinuing
excitation.
As
an
device,
PSR
able
some
basic
functions
such
as
multi‐levels
linearly
increasing
trend,
learning‐forgetting‐relearning
behavior.
same
device
also
shows
emulation
visual
persistency
optic
nerve
skin‐damage
warning.
This
executes
high‐pass
filtering
function
demonstrates
its
potential
in
image‐sharpening
process.
These
findings
provide
avenue
develop
oxide
semiconductor‐based
multifunctional
advanced
systems.
IntechOpen eBooks,
Год журнала:
2024,
Номер
unknown
Опубликована: Окт. 28, 2024
Neuromorphic
computing
draws
motivation
from
the
human
brain
and
presents
a
distinctive
substitute
for
traditional
von
Neumann
architecture.
systems
provide
simultaneous
data
analysis,
energy
efficiency,
error
resistance
by
simulating
neural
networks.
They
promote
innovations
in
eHealth,
science,
education,
transportation,
smart
city
planning,
metaverse,
spurred
on
deep
learning
artificial
intelligence.
However,
performance-focused
thinking
frequently
ignores
sustainability,
emphasizing
need
harmony.
Three
primary
domains
comprise
neuromorphic
research:
computing,
which
investigates
biologically
inspired
processing
alternative
algorithms;
devices,
utilize
electronic
photonic
advancements
to
fabricate
novel
nano-devices;
engineering,
replicates
mechanisms
using
CMOS
post-CMOS
technological
advances.
This
chapter
will
discuss
current
state
of
approach,
established
upcoming
technologies,
material
challenges,
breakthrough
concepts,
advanced
stage
emerging
technologies.
Along
with
software
algorithmic
spike
networks
(SNNs)
algorithms,
it
cover
hardware
improvements,
such
as
memristors,
synaptic
processors.
We
investigate
applications
robotics,
autonomous
systems,
edge
Internet
Things
(IoT),
sensory
systems.
In
conclusion,
future
challenges
possibilities,
major
findings
new
research
directions.
Journal of Materials Chemistry C,
Год журнала:
2024,
Номер
unknown
Опубликована: Янв. 1, 2024
By
regulating
ion
transporting
kinetics
and
diffusion
distances
in
organic
mixed
ionic–electronic
conductor
channels,
highly
tunable
short-
long-term
plasticity
are
obtained
vOECTs
with
aqueous
electrolytes.
Frontiers in Neuroscience,
Год журнала:
2024,
Номер
18
Опубликована: Ноя. 18, 2024
In
this
manuscript,
we
investigate
the
memristor-based
implementation
of
neuronal
ion
channels
in
a
mathematical
model
and
an
experimental
circuit
for
oscillator.
We
used
FitzHugh-Nagumo
equation
system
describing
excitability.
Non-linearities
introduced
by
voltage-gated
were
modeled
using
memristive
devices.
implemented
three
basic
excitability
modes
including
excitable
mode
corresponding
to
single
spike
generation,
self-oscillation
stable
limit
cycle
with
periodic
trains
bistability
between
fixed
point
cycle.
also
found
spike-burst
activity
models
under
certain
parameters.
Modeling
synaptic
transmission,
simulated
postsynaptic
response
triggered
pulse
stimulation.
that
due
charge
accumulation
effect
device,
electronic
synapse
qualitatively
bio-plausible
potentiation
increasing
amplitude
sequence.
Advanced Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Дек. 8, 2024
Abstract
2D‐layered
materials
are
recognized
as
up‐and‐coming
candidates
to
overcome
the
intrinsic
physical
limitation
of
silicon‐based
devices.
Herein,
coexistence
positive
persistent
photoconductivity
(PPPC)
and
negative
(NPPC)
in
SnSe
thin
films
prepared
by
pulsed
laser
deposition
provides
an
excellent
avenue
for
engineering
novel
It
is
determined
that
surface
oxygen
co‐regulated
physisorption
chemisorption,
NPPC
attributed
photo‐controllable
desorption
behavior.
The
dominant
behavior
chemisorption
induces
high
stability,
while
room
adjusting
NPPC.
A
simple
fully
light‐modulated
artificial
synaptic
device
based
on
film
constructed
operate
various
plasticity
reversible
modulation
conductance
applying
430
255
nm
illuminations.
three‐layer
neural
network
structure
with
a
accuracy
95.33%
recognize
handwritten
digital
images
implemented
device.
Furthermore,
pressure‐related
cognition
response
humans
climbing
foraging
recognition
behaviors
anemonefish
mimicked.
This
work
demonstrates
potential
developing
neuromorphic
computing
simulating
biological
without
additional
treatment.
one‐step
method
preparation
highly
adaptable
expected
realize
large‐area
growth
integration
SnSe‐based
