ACS Applied Electronic Materials,
Год журнала:
2024,
Номер
7(1), С. 489 - 499
Опубликована: Дек. 23, 2024
A
flexible
ITO/ZnO/TiOx/ITO
memristor
has
been
confirmed
to
be
a
suitable
candidate
for
nociceptors
by
demonstrating
all
of
the
typical
nociceptive
characteristics.
The
annealing
effect
on
synapse
is
explored
using
different
time
variants
invisible
(above
90%
transparency
in
visible
region)
device.
10
min
annealed
device
found
one
its
bipolar
nonvolatile
gradual
switching
with
over
3000
cycles
endurance
and
>104
s
retention.
Device-to-device
uniformity
reproducibility
have
achieved
narrow
distribution
set,
reset,
forming
voltages.
Synaptic
behaviors
like
long-term
potentiation
depression
800
nearly
linear
potentiation-depression
nonlinearity
(Np/Nd
=
3/0.3),
as
well
short-term
plasticity,
make
it
capable
neuromorphic
computing
applications.
ACS Applied Electronic Materials,
Год журнала:
2024,
Номер
6(7), С. 5371 - 5378
Опубликована: Июль 1, 2024
Neuromorphic
computing
is
a
rapidly
emerging
technology
that
can
overcome
the
limitations
of
von
Neumann-type
architecture-based
systems,
offering
potential
for
implementing
next-generation
architectures.
Here,
we
propose
p-type
three-terminal
synaptic
device
successfully
mimics
function
biological
synapses.
The
proposed
tellurium
(Te)
transistors
incorporating
SiO2
or
Al2O3
gate
dielectric
layers
modulate
weight─that
is,
channel
conductance─essential
realizing
characteristics.
Synaptic
devices
with
optimal
exhibit
large
hysteresis
properties
efficiently
induce
conductance
modulation,
demonstrating
low
power
consumption,
good
linearity,
and
short-/long-term
plasticity.
Furthermore,
Te
transistor
achieved
high
recognition
accuracy
93.8%.
These
findings
suggest
Te-based
fabricated
utilizing
thin-film
processes
could
enhance
efficiency
future
neuromorphic
systems.
The Journal of Chemical Physics,
Год журнала:
2024,
Номер
161(8)
Опубликована: Авг. 26, 2024
Efficient
data
processing
is
heavily
reliant
on
prioritizing
specific
stimuli
and
categorizing
incoming
information.
Within
human
biological
systems,
dorsal
root
ganglions
(particularly
nociceptors
situated
in
the
skin)
perform
a
pivotal
role
detecting
external
stimuli.
These
neurons
send
warnings
to
our
brain,
priming
it
anticipate
potential
harm
prevent
injury.
In
this
study,
we
explore
of
using
ferroelectric
memristor
device
structured
as
metal–ferroelectric–insulator–semiconductor
an
artificial
nociceptor.
The
aim
electrically
receive
damage
interpret
signals
danger.
TiN/HfAlOx
(HAO)/HfSiOx
(HSO)/n+
Si
configuration
replicates
key
functions
emulation
includes
crucial
aspects,
such
threshold
reactivity,
relaxation,
no
adaptation,
sensitization
phenomena
known
“allodynia”
“hyperalgesia.”
Moreover,
propose
establishing
connection
between
synapses
by
training
Hebbian
learning
rule.
This
involves
exposing
injurious
experience
enhance
its
responsiveness,
replicating
synaptic
plasticity.
ACS Applied Electronic Materials,
Год журнала:
2024,
Номер
7(1), С. 489 - 499
Опубликована: Дек. 23, 2024
A
flexible
ITO/ZnO/TiOx/ITO
memristor
has
been
confirmed
to
be
a
suitable
candidate
for
nociceptors
by
demonstrating
all
of
the
typical
nociceptive
characteristics.
The
annealing
effect
on
synapse
is
explored
using
different
time
variants
invisible
(above
90%
transparency
in
visible
region)
device.
10
min
annealed
device
found
one
its
bipolar
nonvolatile
gradual
switching
with
over
3000
cycles
endurance
and
>104
s
retention.
Device-to-device
uniformity
reproducibility
have
achieved
narrow
distribution
set,
reset,
forming
voltages.
Synaptic
behaviors
like
long-term
potentiation
depression
800
nearly
linear
potentiation-depression
nonlinearity
(Np/Nd
=
3/0.3),
as
well
short-term
plasticity,
make
it
capable
neuromorphic
computing
applications.
