Interfacial Diffusion Enable Broad-Band Response in Photodetector based on In2Se3/GaAs Heterojunction DOI Creative Commons

Wen Li,

Dingyue Sun,

Yufeng Shan

и другие.

Optics Express, Год журнала: 2024, Номер 33(2), С. 2954 - 2954

Опубликована: Дек. 30, 2024

Infrared (IR) photodetectors play a crucial role in modern technologies due to their ability operate various environmental conditions. This study developed high-performance In 2 Se 3 /GaAs interdiffusion heterostructure with broadband response using liquid-phase method. It is believed that an InGaAs layer and have been formed at the interface through mutual diffusion of elements, resulting detection spectral range spanning from 0.45 2.7 µm. Consequently, photodetector exhibits notably low noise equivalent power 6.21 × 10 −15 WHz -1/2 1000 Hz, high photoresponsivity ( R ) detectivity D* 16.22 mA/W 4.01 11 Jones under 0 V 630 nm wavelength, respectively. At 1550 nm, it achieves 0.43 µAW -1 1.07 8 V. strongly suggests interdiffused performance low-cost material for responsive photodetectors.

Язык: Английский

Enhanced Visible‐NIR Dual‐Band Performance of GaAs Nanowire Photodetectors Through Phase Manipulation DOI Open Access
Yubin Kang,

Xiaobing Hou,

Zhihong Zhang

и другие.

Advanced Optical Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 16, 2025

Abstract High‐quality 1D nanowires (NWs) are widely used in photodetectors due to their exceptional optoelectronic properties. However, internal structural defects and surface states trap carriers, limiting device performance. In this study, low‐defect‐density GaAs NWs synthesized using molecular beam epitaxy (MBE) combined with the droplet wetting method, effectively reducing non‐radiative recombination defect enabling high‐performance dual‐band for visible (VIS) near‐infrared (NIR) wavelengths. Compared defect‐rich NWs, high‐quality NW photodetector shows a 6.5‐fold increase responsivity 4.7‐fold improvement detectivity at VIS wavelength of 532 nm, achieving values 615.2 A W −1 9.1 × 10 12 Jones. Similarly, devices exhibit 10.7‐fold 12.1‐fold NIR 808 nm. Furthermore, response time measurements highlight influence on photoelectric characteristics. Carrier transport mechanisms under varying densities analyzed detail through numerical simulations. These results emphasize potential properties drive advancements next‐generation nanoscale devices.

Язык: Английский

Процитировано

2
Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure DOI

Yani Li,

Haiwu Zheng,

Jinhua Li

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(8)

Опубликована: Фев. 24, 2025

Zero-dimensional/one-dimensional (0D/1D) heterojunctions have excellent potential in the field of optoelectronic devices due to synergy effect different dimensions. Most reported 0D/1D heterojunction photodetectors only focus on optimizing separation efficiency photogenerated carriers at interface. However, within quantum dots (QDs) cannot be transferred electrodes, resulting recombination separated Therefore, response speed most is still limited order seconds (s) and milliseconds (ms). In our work, we demonstrate a nanosecond (ns) scale ZnO/CuO photodetector with efficient photoelectric conversion by engineering type-II Herein, surface defect states ZnO QDs are deliberately introduced as “electrons storage pool” suppress carrier further promote separation, which has been confirmed photoluminescence (PL) time-resolved (TRPL). As result, exhibited performance ultrafast 20 ns, responsivity 213 A/W, detectivity 2.95 × 1011 Jones, respectively. This related interface provides feasible strategy for development high-performance photodetectors.

Язык: Английский

Процитировано

0
DUV-NIR dual-band photodetector based on Ga2O3/GaAs heterogeneous junctions DOI
Catherine G. Shang,

Rongrong Chen,

Wei Mi

и другие.

Materials Science in Semiconductor Processing, Год журнала: 2025, Номер 192, С. 109472 - 109472

Опубликована: Март 15, 2025

Язык: Английский

Процитировано

0
UV-Vis-NIR Broadband Dual-Mode Photodetector Based on Graphene/InP Van Der Waals Heterostructure DOI Creative Commons
Mingyang Shen, Hao Liu, Qi Wang

и другие.

Sensors, Год журнала: 2025, Номер 25(7), С. 2115 - 2115

Опубликована: Март 27, 2025

Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, not yet been utilized in DmPDs. In this work, we fabricate high-performance DmPD based on graphene/InP Van der Waals heterostructure facile way, achieving broadband from ultraviolet-visible near-infrared wavelengths. The device incorporates two top electrodes contacting monolayer chemical vapor deposition (CVD) graphene bottom electrode the backside of an InP substrate. By flexibly switching among these three electrodes, as-fabricated can operate self-powered photovoltaic mode for energy-efficient high-speed imaging or biased photoconductive detecting weak light signals, fully demonstrating its multifunctional detection capabilities. Specifically, mode, leverages vertically configured Schottky junction achieve on/off ratio 8 × 103, responsivity 49.2 mA/W, detectivity 4.09 1011 Jones, ultrafast response, with rising time (τr) falling (τf) 2.8/6.2 μs. at 1 V bias, photogating effect enhances 162.5 A/W. This work advances development InP-based optoelectronic devices.

Язык: Английский

Процитировано

0
Carrier Recombination and Surface Band Bending in GaAs/InGaAs Core–Shell Nanowires with Reverse Type-I Band Alignment DOI
Puning Wang,

Bingheng Meng,

Yubin Kang

и другие.

The Journal of Physical Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Апрель 4, 2025

Язык: Английский

Процитировано

0
Tuning the optoelectronic properties of GaAs/AlxGa1−xAs core/shell tetrapod quantum dots with a… DOI Creative Commons
A. Ed‐Dahmouny, Hind Althib, R. Arraoui

и другие.

Results in Physics, Год журнала: 2025, Номер unknown, С. 108281 - 108281

Опубликована: Май 1, 2025

Язык: Английский

Процитировано

0
Machine learning-enabled optoelectronic material discovery: a comprehensive review DOI Open Access
Yu Shu, Naihua Miao,

R. J. Li

и другие.

Journal of Materials Informatics, Год журнала: 2025, Номер 5(3)

Опубликована: Май 28, 2025

The development of advanced optoelectronic materials constitutes a pivotal frontier in modern energy and communication technologies, facilitating critical energy-photon-electron interconversion processes that underpin sustainable infrastructures high-performance electronic devices. However, the discovery optimization novel face substantial hurdles arising from complicated structure-property interdependencies, prohibitive costs, protracted innovation cycles. Conventional empirical approaches computational simulations usually exhibit limited efficacy addressing escalating demands for with superior stability, economic viability, customizable properties. integration machine learning (ML) high-throughput screening has emerged as transformative strategy to address these challenges. By rapidly processing large multidimensional datasets predicting material properties such structure, thermodynamic charge transport behaviors, ML offers unprecedented capabilities efficient rational design materials. This review provides comprehensive overview cutting-edge ML-driven methodologies emphasis on workflows, data strategies, model frameworks. We also discuss challenges prospects applications, particularly standardization, interpretability closed-loop experimental validation. further propose potential artificial intelligence autonomous laboratories build powerful pipeline advance

Язык: Английский

Процитировано

0
Interfacial Diffusion Enable Broad-Band Response in Photodetector based on In2Se3/GaAs Heterojunction DOI Creative Commons

Wen Li,

Dingyue Sun,

Yufeng Shan

и другие.

Optics Express, Год журнала: 2024, Номер 33(2), С. 2954 - 2954

Опубликована: Дек. 30, 2024

Infrared (IR) photodetectors play a crucial role in modern technologies due to their ability operate various environmental conditions. This study developed high-performance In 2 Se 3 /GaAs interdiffusion heterostructure with broadband response using liquid-phase method. It is believed that an InGaAs layer and have been formed at the interface through mutual diffusion of elements, resulting detection spectral range spanning from 0.45 2.7 µm. Consequently, photodetector exhibits notably low noise equivalent power 6.21 × 10 −15 WHz -1/2 1000 Hz, high photoresponsivity ( R ) detectivity D* 16.22 mA/W 4.01 11 Jones under 0 V 630 nm wavelength, respectively. At 1550 nm, it achieves 0.43 µAW -1 1.07 8 V. strongly suggests interdiffused performance low-cost material for responsive photodetectors.

Язык: Английский

Процитировано

0