Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(8)

Published: Feb. 24, 2025

Zero-dimensional/one-dimensional (0D/1D) heterojunctions have excellent potential in the field of optoelectronic devices due to synergy effect different dimensions. Most reported 0D/1D heterojunction photodetectors only focus on optimizing separation efficiency photogenerated carriers at interface. However, within quantum dots (QDs) cannot be transferred electrodes, resulting recombination separated Therefore, response speed most is still limited order seconds (s) and milliseconds (ms). In our work, we demonstrate a nanosecond (ns) scale ZnO/CuO photodetector with efficient photoelectric conversion by engineering type-II Herein, surface defect states ZnO QDs are deliberately introduced as “electrons storage pool” suppress carrier further promote separation, which has been confirmed photoluminescence (PL) time-resolved (TRPL). As result, exhibited performance ultrafast 20 ns, responsivity 213 A/W, detectivity 2.95 × 1011 Jones, respectively. This related interface provides feasible strategy for development high-performance photodetectors.

Language: Английский

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DUV-NIR dual-band photodetector based on Ga2O3/GaAs heterogeneous junctions

Materials Science in Semiconductor Processing, Journal Year: 2025, Volume and Issue: 192, P. 109472 - 109472

Published: March 15, 2025

Language: Английский

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UV-Vis-NIR Broadband Dual-Mode Photodetector Based on Graphene/InP Van Der Waals Heterostructure

Sensors, Journal Year: 2025, Volume and Issue: 25(7), P. 2115 - 2115

Published: March 27, 2025

Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, not yet been utilized in DmPDs. In this work, we fabricate high-performance DmPD based on graphene/InP Van der Waals heterostructure facile way, achieving broadband from ultraviolet-visible near-infrared wavelengths. The device incorporates two top electrodes contacting monolayer chemical vapor deposition (CVD) graphene bottom electrode the backside of an InP substrate. By flexibly switching among these three electrodes, as-fabricated can operate self-powered photovoltaic mode for energy-efficient high-speed imaging or biased photoconductive detecting weak light signals, fully demonstrating its multifunctional detection capabilities. Specifically, mode, leverages vertically configured Schottky junction achieve on/off ratio 8 × 103, responsivity 49.2 mA/W, detectivity 4.09 1011 Jones, ultrafast response, with rising time (τr) falling (τf) 2.8/6.2 μs. at 1 V bias, photogating effect enhances 162.5 A/W. This work advances development InP-based optoelectronic devices.

Language: Английский

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Enhanced Visible‐NIR Dual‐Band Performance of GaAs Nanowire Photodetectors Through Phase Manipulation

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 16, 2025

Abstract High‐quality 1D nanowires (NWs) are widely used in photodetectors due to their exceptional optoelectronic properties. However, internal structural defects and surface states trap carriers, limiting device performance. In this study, low‐defect‐density GaAs NWs synthesized using molecular beam epitaxy (MBE) combined with the droplet wetting method, effectively reducing non‐radiative recombination defect enabling high‐performance dual‐band for visible (VIS) near‐infrared (NIR) wavelengths. Compared defect‐rich NWs, high‐quality NW photodetector shows a 6.5‐fold increase responsivity 4.7‐fold improvement detectivity at VIS wavelength of 532 nm, achieving values 615.2 A W −1 9.1 × 10 12 Jones. Similarly, devices exhibit 10.7‐fold 12.1‐fold NIR 808 nm. Furthermore, response time measurements highlight influence on photoelectric characteristics. Carrier transport mechanisms under varying densities analyzed detail through numerical simulations. These results emphasize potential properties drive advancements next‐generation nanoscale devices.

Language: Английский

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Carrier Recombination and Surface Band Bending in GaAs/InGaAs Core–Shell Nanowires with Reverse Type-I Band Alignment

The Journal of Physical Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: April 4, 2025

Language: Английский

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Interfacial Diffusion Enable Broad-Band Response in Photodetector based on In2Se3/GaAs Heterojunction

Optics Express, Journal Year: 2024, Volume and Issue: 33(2), P. 2954 - 2954

Published: Dec. 30, 2024

Infrared (IR) photodetectors play a crucial role in modern technologies due to their ability operate various environmental conditions. This study developed high-performance In 2 Se 3 /GaAs interdiffusion heterostructure with broadband response using liquid-phase method. It is believed that an InGaAs layer and have been formed at the interface through mutual diffusion of elements, resulting detection spectral range spanning from 0.45 2.7 µm. Consequently, photodetector exhibits notably low noise equivalent power 6.21 × 10 −15 WHz -1/2 1000 Hz, high photoresponsivity ( R ) detectivity D* 16.22 mA/W 4.01 11 Jones under 0 V 630 nm wavelength, respectively. At 1550 nm, it achieves 0.43 µAW -1 1.07 8 V. strongly suggests interdiffused performance low-cost material for responsive photodetectors.

Language: Английский

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