Near-infrared
(NIR)
spectroscopy
based
on
phosphor-converted
NIR
light-emitting-diode
(LED)
has
extensive
applications
in
modern
life,
stimulating
the
exploration
of
ultra-broadband
phosphors
with
high
efficiency.
Herein,
Cr3+-doped
perovskite-like
Mg4Sb2O9
phosphor
was
synthesized,
which
exhibits
a
emission
peak
wavelength
855
nm,
and
full
width
at
half
maximum
(FWHM)
about
207
nm.
Upon
442
nm
excitation,
quantum
efficiency
(QY)
absorption
(AE)
were
determined
to
be
59.1%
48.3%,
respectively;
while
luminescence
intensity
remained
61.5%
room
temperature
373
K,
indicating
an
excellent
efficient
moderate
thermal
stability
this
material.
The
fabricated
pc-LED
through
combining
optimized
455
LED
chip
presents
output
power
20.1
mW
photoelectronic
conversion
3.6%
under
driving
current
175
mA.
These
results
suggest
that
Mg4Sb2O9:Cr3+
luminescent
performance
may
have
good
potential
for
pc-LEDs.
Laser & Photonics Review,
Год журнала:
2024,
Номер
18(8)
Опубликована: Март 20, 2024
Abstract
The
performance
of
the
near‐infrared
phosphor‐converted
light‐emitting
diodes
(NIR
pc‐LEDs)
mainly
depends
on
NIR
emitting
phosphors
used.
Cr
3+
doped
materials
can
be
excited
by
blue
light
chips,
but
their
emission
is
located
in
NIR‐I
region
(650–1000
nm).
Ni
2+
are
NIR‐II
(1000–1700
nm),
they
cannot
effectively
chips.
Herein,
,
mono‐doped,
and
co‐doped
Sr
2
GaTaO
6
prepared
investigated.
ions
occupy
two
octahedral
sites
Ga
Ta
5+
.
co‐doping
has
achieved
breakthroughs.
One
to
shift
optimal
excitation
wavelength
from
violet
due
energy
transfer
(efficiency
up
70%)
other
achieve
broadband
continuous
across
regions
(650–1700
nm,
with
a
full
width
at
half
maximum
(FWHM)
410
nm
(173
+
237
nm)).
:
0.02Cr
0.01Ni
phosphor
combined
commercial
460
chip
realize
its
application
organic
compounds
identification,
night
vision,
biological
imaging.
This
work
points
out
direction
for
future
development
efficient
super
NIR‐emitting
phosphors.
The Journal of Physical Chemistry C,
Год журнала:
2023,
Номер
127(46), С. 22799 - 22807
Опубликована: Ноя. 8, 2023
Cr3+-doped
near-infrared
(NIR)
phosphors
exhibit
peculiar
advantages
in
fabricating
NIR
phosphor-converted
light-emitting
diodes
(NIR
pc-LEDs)
for
machine/night
vision,
plant
cultivation,
and
nondestruction
detection.
However,
efficient
doped
with
Cr3+
usually
contain
noble/rare
metal
ions
such
as
In,
Sc,
Ga,
Ge,
thus
making
it
an
essential
mission
to
develop
much
cheaper
phosphors.
In
this
work,
we
report
inexpensive
broadband
phosphor,
La2MgSnO6:Cr3+
(LMS:Cr3+),
that
can
be
easily
synthesized
air.
LMS:Cr3+
has
two
distorted
octahedra
lattice
sites
doping
displays
a
wide
emission
spectrum
covering
the
range
of
600–1200
nm
maximum
751
full
width
at
half-maximum
(fwhm)
104
under
450
excitation.
The
originated
from
distinct
crystallographic
medium-strength
crystal
field
Cr3+.
shows
optical
band
gap
3.72
eV,
its
intensity
still
maintain
68.5%
423
K.
Finally,
prototype
pc-LED
fabricated
by
combining
LMS:0.01Cr3+
blue
LED
is
demonstrated
applications
night
recognition
cultural
relics.
Advanced Materials Technologies,
Год журнала:
2023,
Номер
9(2)
Опубликована: Ноя. 29, 2023
Abstract
To
realize
efficient
and
broadband
near
infrared
(NIR)
light
in
both
NIR‐I
NIR‐II
regions,
Gd
3
Mg
0.5
Al
1.5
Ga
2.5
Ge
O
12
(GMAGG):
Cr
3+
,
Yb
Ni
2+
phosphors
are
prepared
this
study.
The
effects
of
‐Yb
co‐doping
‐Ni
tri‐doping
on
the
luminescence
properties
investigated.
GMAGG:
exhibits
high
internal
quantum
efficiency
(IQE)
96.4%,
near‐zero
thermal
quenching
(96.5%@423
K)
650–1100
nm.
By
constructing
energy
transfer
from
to
emission
range
is
further
extended
650–1700
nm
with
a
IQE
28%
good
stability
(66%@423
K).
NIR
LEDs
0.04Cr
0.008Yb
0.04Ni
exhibit
57.5
8.1
mW
at
an
input
current
100
mA,
respectively.
results
show
that
promising
phosphor
for
sources.