Bio-inspired neuron based on threshold selector and tunnel diode capable of excitability modulation

Neurocomputing, Год журнала: 2025, Номер unknown, С. 129454 - 129454

Опубликована: Янв. 1, 2025

Язык: Английский

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Synchronization of complex networks with synapse regulated by energy difference

Nonlinear Dynamics, Год журнала: 2025, Номер unknown

Опубликована: Янв. 6, 2025

Язык: Английский

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Dynamic Analysis and Implementation of FPGA for a New 4D Fractional-Order Memristive Hopfield Neural Network

Fractal and Fractional, Год журнала: 2025, Номер 9(2), С. 115 - 115

Опубликована: Фев. 13, 2025

Memristor-based fractional-order chaotic systems can record information from the past, present, and future, describe real world more accurately than integer-order systems. This paper proposes a novel memristor model verifies its characteristics through pinched loop (PHL) method. Subsequently, new memristive Hopfield neural network (4D-FOMHNN) is introduced to simulate induced current, accompanied by Caputo’s definition of fractional order. An Adomian decomposition method (ADM) employed for system solution. By varying parameters order 4D-FOMHNN, rich dynamic behaviors including transient chaos, coexistence attractors are observed using methods such as bifurcation diagrams Lyapunov exponent analysis. Finally, proposed FOMHNN implemented on field-programmable gate array (FPGA), oscilloscope observation results consistent with MATLAB numerical simulation results, which further validate theoretical analysis provide basis application in field encryption.

Язык: Английский

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Synchronization behavior of memristive FitzHugh-Nagumo neurons in time-varying networks under external stimuli

Chaos Solitons & Fractals, Год журнала: 2025, Номер 192, С. 116001 - 116001

Опубликована: Янв. 10, 2025

Язык: Английский

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Dynamics of a functional neuron model with double membranes

Chaos Solitons & Fractals, Год журнала: 2024, Номер 188, С. 115496 - 115496

Опубликована: Сен. 6, 2024

Язык: Английский

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Coherence resonance and energy dynamics in a memristive map neuron

Chaos An Interdisciplinary Journal of Nonlinear Science, Год журнала: 2025, Номер 35(2)

Опубликована: Фев. 1, 2025

Nonlinear circuits can be tamed to produce similar firing patterns as those detected from biological neurons, and some suitable neural obtained propose reliable neuron models. Capacitor C inductor L contribute energy storage while resistors consume energy, the time constant RC or L/R provides a reference scale for responses. The inclusion of memristors introduces memory effects by coupling flow with historical states circuit. A nonlinear resistor nonlinearity, enriching circuit's dynamic characteristics. In this work, circuit is constructed one branch contains voltage source E. relation between physical variables confirmed memristive oscillator an exact function proposed. Furthermore, equivalent map derived when linear transformation applied sampled oscillator-like neuron. calculated following Helmholtz's theorem, expressed description. It found that periodic state higher than chaotic state, which highlights key role in mode conversion. Noise-induced coherence resonance stochastic induced under external field. adaptive control mechanism influenced Hamilton investigated, revealing its impact on transitions. These findings bridge gap design modeling, providing theoretical insights into applications neuromorphic computing, signal processing, energy-efficient systems.

Язык: Английский

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Dynamics of a neuron with a hybrid memristive ion channel

Chaos Solitons & Fractals, Год журнала: 2025, Номер 194, С. 116233 - 116233

Опубликована: Фев. 28, 2025

Язык: Английский

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A memristive neuron with nonlinear membranes and network patterns

Physics Letters A, Год журнала: 2025, Номер 540, С. 130390 - 130390

Опубликована: Фев. 22, 2025

Язык: Английский

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Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors

Applied Physics Letters, Год журнала: 2025, Номер 126(1)

Опубликована: Янв. 6, 2025

Hafnium oxide (HfOx) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS technology, and high dielectric constant. However, the low reliability of HfOx-based is key factor hindering widespread practical applications. Herein, amorphous HfOx (a-HfOx) used construct memristors, nitrogen treatment strategy employed enhance characteristics. All fabricated Al/a-HfOx/ITO demonstrate bipolar digital RS behaviors, specifically, 500 °C-treated a-HfOx device exhibits reliable performance, including cycle-to-cycle variability, concentrated distributions operating voltages, long-term retention capacity (>104 s), good cycle endurance (>200 cycles). The mechanisms physical models for enhanced performance thoroughly elucidated, revealing that formation stable oxygen vacancy–dinitrogen complexes confines conductive filament path significantly reduces randomness during rupture. This work renders an effective material engineering widening a toward designing data storage devices striking performances.

Язык: Английский

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Rich dynamics induced by memristive synapse in Chialvo neuron network

Nonlinear Dynamics, Год журнала: 2025, Номер unknown

Опубликована: Фев. 19, 2025

Язык: Английский

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