Neural Networks, Journal Year: 2025, Volume and Issue: 187, P. 107379 - 107379
Published: March 11, 2025
Language: Английский
Neural Networks, Journal Year: 2025, Volume and Issue: 187, P. 107379 - 107379
Published: March 11, 2025
Language: Английский
Neurocomputing, Journal Year: 2025, Volume and Issue: unknown, P. 129454 - 129454
Published: Jan. 1, 2025
Language: Английский
Citations
4Chaos Solitons & Fractals, Journal Year: 2025, Volume and Issue: 192, P. 116001 - 116001
Published: Jan. 10, 2025
Language: Английский
Citations
3Fractal and Fractional, Journal Year: 2025, Volume and Issue: 9(2), P. 115 - 115
Published: Feb. 13, 2025
Memristor-based fractional-order chaotic systems can record information from the past, present, and future, describe real world more accurately than integer-order systems. This paper proposes a novel memristor model verifies its characteristics through pinched loop (PHL) method. Subsequently, new memristive Hopfield neural network (4D-FOMHNN) is introduced to simulate induced current, accompanied by Caputo’s definition of fractional order. An Adomian decomposition method (ADM) employed for system solution. By varying parameters order 4D-FOMHNN, rich dynamic behaviors including transient chaos, coexistence attractors are observed using methods such as bifurcation diagrams Lyapunov exponent analysis. Finally, proposed FOMHNN implemented on field-programmable gate array (FPGA), oscilloscope observation results consistent with MATLAB numerical simulation results, which further validate theoretical analysis provide basis application in field encryption.
Language: Английский
Citations
3Nonlinear Dynamics, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 6, 2025
Language: Английский
Citations
2Chaos Solitons & Fractals, Journal Year: 2024, Volume and Issue: 188, P. 115496 - 115496
Published: Sept. 6, 2024
Language: Английский
Citations
15Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(1)
Published: Jan. 6, 2025
Hafnium oxide (HfOx) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS technology, and high dielectric constant. However, the low reliability of HfOx-based is key factor hindering widespread practical applications. Herein, amorphous HfOx (a-HfOx) used construct memristors, nitrogen treatment strategy employed enhance characteristics. All fabricated Al/a-HfOx/ITO demonstrate bipolar digital RS behaviors, specifically, 500 °C-treated a-HfOx device exhibits reliable performance, including cycle-to-cycle variability, concentrated distributions operating voltages, long-term retention capacity (>104 s), good cycle endurance (>200 cycles). The mechanisms physical models for enhanced performance thoroughly elucidated, revealing that formation stable oxygen vacancy–dinitrogen complexes confines conductive filament path significantly reduces randomness during rupture. This work renders an effective material engineering widening a toward designing data storage devices striking performances.
Language: Английский
Citations
1Chaos An Interdisciplinary Journal of Nonlinear Science, Journal Year: 2025, Volume and Issue: 35(2)
Published: Feb. 1, 2025
Nonlinear circuits can be tamed to produce similar firing patterns as those detected from biological neurons, and some suitable neural obtained propose reliable neuron models. Capacitor C inductor L contribute energy storage while resistors consume energy, the time constant RC or L/R provides a reference scale for responses. The inclusion of memristors introduces memory effects by coupling flow with historical states circuit. A nonlinear resistor nonlinearity, enriching circuit's dynamic characteristics. In this work, circuit is constructed one branch contains voltage source E. relation between physical variables confirmed memristive oscillator an exact function proposed. Furthermore, equivalent map derived when linear transformation applied sampled oscillator-like neuron. calculated following Helmholtz's theorem, expressed description. It found that periodic state higher than chaotic state, which highlights key role in mode conversion. Noise-induced coherence resonance stochastic induced under external field. adaptive control mechanism influenced Hamilton investigated, revealing its impact on transitions. These findings bridge gap design modeling, providing theoretical insights into applications neuromorphic computing, signal processing, energy-efficient systems.
Language: Английский
Citations
1Communications in Nonlinear Science and Numerical Simulation, Journal Year: 2024, Volume and Issue: 139, P. 108320 - 108320
Published: Aug. 27, 2024
Language: Английский
Citations
5Nonlinear Dynamics, Journal Year: 2024, Volume and Issue: unknown
Published: Oct. 3, 2024
Language: Английский
Citations
5Nonlinear Dynamics, Journal Year: 2024, Volume and Issue: unknown
Published: Nov. 17, 2024
Language: Английский
Citations
4