Materials Science in Semiconductor Processing, Год журнала: 2024, Номер 185, С. 108931 - 108931
Опубликована: Сен. 25, 2024
Язык: Английский
Materials Science in Semiconductor Processing, Год журнала: 2024, Номер 185, С. 108931 - 108931
Опубликована: Сен. 25, 2024
Язык: Английский
Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Янв. 28, 2025
Abstract Magnetoresistance effects, such as tunnel magnetoresistance and giant magnetoresistance, play pivotal roles in spintronics, where the coupling between spin current affects electrical resistance. These effects are fundamental for various applications, including high‐density information storage, signal transmission, processing. With growing demand magnetoresistance‐based modern devices post‐Moore era, researchers now focusing on developing using 2D magnetic materials. materials offer several advantages, a unique layered structure, high integration density, tunable room‐temperature ferromagnetism, intriguing magnetoresistive properties. This review starts with brief introduction to their typical synthesis routes, followed by preview of some classifications In particular, different applications spintronics critically discussed. Finally, challenges prospects this emerging field suggested. work highlights importance effect advancing technology, offering vital many fields ranging from memory neuromorphic computing.
Язык: Английский
Процитировано
5Small, Год журнала: 2024, Номер unknown
Опубликована: Сен. 5, 2024
Abstract Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet growing demands diverse applications spanning spectrum from ultraviolet (UV) terahertz (THz). 2D materials very attractive photodetector because their distinct optical electrical properties. The atomic‐thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, absorption coefficient significantly benefit chip‐scale production integration materials‐based photodetectors. extremely sensitive detection at ambient temperature with ultra‐fast capabilities is made possible adaptability materials. Here, recent progress photodetectors based on materials, covering UV THz reported. In this report, light first deliberated in terms physics. Then, various mechanisms which detectors work, important performance parameters, fruitful fabrication methods, fundamental properties types detectors, different strategies improve performance, discussed.
Язык: Английский
Процитировано
13Advanced Materials Technologies, Год журнала: 2024, Номер unknown
Опубликована: Июль 1, 2024
Abstract High‐power all‐fiber thulium lasers have gained considerable interest in recent times due to their distinct characteristics and versatile applications the medical industrial sectors. This review article presents a comprehensive examination of advancements challenges this field. It begins with an overview thulium‐doped silica fiber, which is critical component for high‐power operating at 2 µm (micrometer) wavelength band. The research progress essential laser sources, including continuous‐wave (CW), quasi‐continuous wave (QCW), pulsed lasers, then thoroughly analyzed, highlighting respective strengths limitations. Additionally, diverse fiber domains are summarized. Furthermore, emphasizes current advancement (TDFLs) outlines potential avenues future development. Despite TDFLs being predominant source lithotripsy material processing applications, optimizing performance expediting further technology remain crucial objectives. aims provide valuable insights researchers, engineers, professionals working field µm.
Язык: Английский
Процитировано
7Materials Today Physics, Год журнала: 2025, Номер unknown, С. 101753 - 101753
Опубликована: Май 1, 2025
Язык: Английский
Процитировано
0Laser Physics, Год журнала: 2025, Номер 35(6), С. 065001 - 065001
Опубликована: Май 30, 2025
Abstract The CsPbBr 1.8 I 1.2 perovskite quantum dots (QDs) were successfully synthesized via hot-injection method, and their nonlinear optical properties comprehensively characterized. Utilizing these QDs as saturable absorbers at 1 μ m, a passively mode-locked Nd:YVO 4 laser with W-type resonant cavity of 1.88 m was constructed. maximum output power produced 287 mW the pumped 3.3 W, which corresponded to narrowest pulse duration 3.9 ps. results underscore huge potential in ultrafast photonics broadband materials.
Язык: Английский
Процитировано
0Chemical Engineering Journal, Год журнала: 2024, Номер unknown, С. 158917 - 158917
Опубликована: Дек. 1, 2024
Язык: Английский
Процитировано
2Materials Science in Semiconductor Processing, Год журнала: 2024, Номер 185, С. 108931 - 108931
Опубликована: Сен. 25, 2024
Язык: Английский
Процитировано
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