Self‐Rectifying Volatile Memristor for Highly Dynamic Functions

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 19, 2025

Abstract In this study, a highly rectifying memristor composed of Pt/TaO x /TiN stack, incorporating complementary metal‐oxide semiconductor‐friendly metal oxide switching layer, is fabricated to assess its performance in diverse range applications. The exhibits characteristics due the Schottky barrier formed by work function difference between Pt and TiN electrodes. For compliance current 1 mA, displays volatile memory properties, attributed migration oxygen ions within TaO layer. Leveraging behavior, synaptic functions—where changes plasticity occur response incoming spikes—are emulated. Additionally, complete functions biological nociceptor are demonstrated, including threshold, relaxation, no‐adaptation, sensitization, recovery. These dynamic then utilized mimic neuronal firing with array, Morse code implementation enabling data generation, computing through cost‐effective reservoir computing. simplicity fabrication process broad implemented single make device promising candidate for future

Язык: Английский

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Emulating nociceptor and synaptic functions in GaOx-based resistive random-access memory for bio-inspired computing

Applied Surface Science, Год журнала: 2025, Номер unknown, С. 162973 - 162973

Опубликована: Март 1, 2025

Язык: Английский

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TiN/TiOx/WOx/Pt heterojunction memristor for sensory and neuromorphic computing

Journal of Alloys and Compounds, Год журнала: 2024, Номер 1004, С. 175830 - 175830

Опубликована: Авг. 5, 2024

Язык: Английский

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A novel chaotification method for discrete memristors

The European Physical Journal Plus, Год журнала: 2024, Номер 139(9)

Опубликована: Сен. 17, 2024

Язык: Английский

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