Self‐Rectifying Volatile Memristor for Highly Dynamic Functions

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 19, 2025

Abstract In this study, a highly rectifying memristor composed of Pt/TaO x /TiN stack, incorporating complementary metal‐oxide semiconductor‐friendly metal oxide switching layer, is fabricated to assess its performance in diverse range applications. The exhibits characteristics due the Schottky barrier formed by work function difference between Pt and TiN electrodes. For compliance current 1 mA, displays volatile memory properties, attributed migration oxygen ions within TaO layer. Leveraging behavior, synaptic functions—where changes plasticity occur response incoming spikes—are emulated. Additionally, complete functions biological nociceptor are demonstrated, including threshold, relaxation, no‐adaptation, sensitization, recovery. These dynamic then utilized mimic neuronal firing with array, Morse code implementation enabling data generation, computing through cost‐effective reservoir computing. simplicity fabrication process broad implemented single make device promising candidate for future

Language: Английский

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Emulating nociceptor and synaptic functions in GaOx-based resistive random-access memory for bio-inspired computing

Applied Surface Science, Journal Year: 2025, Volume and Issue: unknown, P. 162973 - 162973

Published: March 1, 2025

Language: Английский

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TiN/TiOx/WOx/Pt heterojunction memristor for sensory and neuromorphic computing

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 1004, P. 175830 - 175830

Published: Aug. 5, 2024

Language: Английский

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A novel chaotification method for discrete memristors

The European Physical Journal Plus, Journal Year: 2024, Volume and Issue: 139(9)

Published: Sept. 17, 2024

Language: Английский

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